Power MOSFET Model Research Articles

Improved Temperature-Scalable DC model for SiC power MOSFET including Quasi-Saturation effect

In this paper, accurate temperature-dependent static model for Silicon-Carbide (SiC) power MOSFET is presented. The proposed model is formed by two equations relating to linear and saturation operating regions. In this model, new formalism of the saturation drain current is introduced to consider the peculiar features observed in the I-V static characteristics of the SiC power MOSFET: a) moderate inversion region, or region of low gate voltages and b) quasi-saturation region, region of high gate voltages at which the drain current becomes less sensitive to the increase of gate voltage. In addition, the model captures with high-precision the transition region between linear and saturation region, pinch-off region, noticed in the output characteristics of the SiC power MOSFETs. It will be shown that the model equations ensure continuity and smooth transition between all operating regions. Temperature scaling of the model is carried out by its temperature scaling parameters. The proposed compact model is simple and efficient using reduced number of technology independent parameters. Simple parameter extraction procedure is described that uses an optimizer algorithm based on good experimental initial guess. Excellent agreement is obtained by comparing model to TCAD simulation and device measurement.

An Optimal Parameter Extraction Procedure for SiC Power MOSFET Model

A simple and efficient parameter extraction method for Silicon Carbide (SiC) power MOSFET model is described. This method uses nonlinear optimization algorithm to find the optimal set of parameters to model. The optimizer algorithm starts with initial guess parameters, extracted from measurement, to provide a set of parameters minimizing errors between model and measurements data in entire operating regions of the device. The starting initial guess parameter values give to the algorithm a closed solution to obtain the optimal set of model parameters with reduced iteratives. The Levenberg-Marquardt (LM) algorithm will be used in this work. The efficiency of the proposed extraction method is proved with the good agreements obtained between the model and the measurements.

Accelerating Parameter Extraction of Power MOSFET Models Using Automatic Differentiation

The extraction of the model parameters is as important as the development of compact model itself because simulation accuracy is fully determined by the accuracy of the parameters used. This study proposes an efficient model-parameter extraction method for compact models of power MOSFETs. The proposed method employs automatic differentiation (AD), which is extensively used for training artificial neural networks. In the proposed AD-based parameter extraction, gradient of all the model parameters is analytically calculated by forming a graph that facilitates the backward propagation of errors. Based on the calculated gradient, computationally intensive numerical differentiation is eliminated and the model parameters are efficiently optimized. Experiments are conducted to fit current and capacitance characteristics of commercially available silicon carbide MOSFET using power MOSFET models having 13 model parameters. Results demonstrated that the proposed method could successfully derive the model parameters 3.50x faster than a conventional numerical-differentiation method while achieving the equal accuracy.

An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior

An Efficient Electro-Thermal Compact Model of SiC Power MOSFETs Including Third Quadrant Behavior

Datasheet-Driven Compact Model of Silicon Carbide Power MOSFET Including Third-Quadrant Behavior

This article presents a simulation model of silicon carbide (SiC) power MOSFET that accurately predicts both the static and dynamic third-quadrant behavior without compromising the first-quadrant's accuracy. Unlike existing models, this model features an asymmetric third-quadrant behavior for MOSFET characteristics necessary for the accurate synchronous rectifier simulations. Moreover, it includes the gate-dependent body diode behavior, essential for the accurate prediction of freewheeling high-side device behavior in half-bridge configurations with significant gate voltage oscillation. The model also includes reverse recovery characteristics for the accurate overshoot and power loss prediction. Despite having these added features, the model demonstrates good convergence and efficiency due to the replacement of conditional piecewise equations with continuous ones consisting of weighted variables. The model's convergence capability and efficiency have been verified by simulating a five-level cascaded H-bridge multilevel inverter. The model's superior efficiency and accuracy have been validated by comparing it with an established SiC power MOSFET model. Also, an easy-to-follow parameter extraction procedure is documented that only requires data commonly available in commercial datasheets for broader utility. Considering accuracy, efficiency, and convenience, the model is useful for all power electronics converter applications.

Multiparameter reliability model for SiC power MOSFET subjected to repetitive thermomechanical load

Multiparameter reliability model for SiC power MOSFET subjected to repetitive thermomechanical load

Modeling COTS System TID Response With Monte Carlo Sampling and Transistor Swapping Experiments

Modeling systems containing commercial-off-the-shelf (COTS) parts exposed to total ionizing dose (TID) are difficult due to large parameter variability in the parts as a function of dose. This article provides a rapid approach to predicting the system performance as a function of TID given these parameter variations. A radiation-aware model for an IRF510 power MOSFET is generated from a small population of irradiated parts, and this model is randomly sampled for each of the transistors in an example circuit, utilizing the degraded parameters. The simulations predict the circuit operating in one of three distinct modes, with circuits containing large variability in parts failing in some instances. The simulated data are compared to experimental data using a method that involves interchanging irradiated parts in a socketed printed circuit board (PCB) to produce a large number of different combinations of test circuits. The simulated data correctly predicted the circuit modes of operation, and the part-swapping technique eliminated the cost of building many test boards.

Fast and simple model generation for superjunction power MOSFETs

This paper describes a new way to create a behavioral model for power MOSFETs with highly nonlinear parasitic capacitances like those based on superjunction (SJ) principles. The process ranges from a simple measurement to the final model for SPICE simulations. One of the benefits of the proposed modeling technique is that it does not require any information about the voltage-dependent capacitances of the MOSFET from the data sheet but instead relies on a simple measurement method using a vector network analyzer. The measurement data can be used for modeling all parasitic capacitances and inductances in the SPICE model. Compared to existing simulation models by the manufacturer, the proposed model promises better convergence, more accurate high-frequency behavior and faster simulation time. The advantages and disadvantages of this modeling technique are discussed.

PSPICE compact model for power MOSFET based on manufacturer datasheet

In this paper, large signal model for power MOSFET devices is presented. The proposed model includes quasi-saturation effect and describes accurately the electrical behavior of the power MOSFET devices. The large signal model elements will be provided based on the device structure. Furthermore, the model parameters are extracted from measurements considering the voltages depending effect of the nonlinear gate-source, gate-drain and drain-source interelectrode capacitances. Excellent agreements will be shown between the simulated and the datasheet data. Finally, a description of the model will be provided along with the parameter extraction procedure.

Model parameter calibration method of SiC power MOSFETs behavioural model

To accurately estimate the switching characteristics of silicon carbide (SiC) metal-oxide-semiconductor field effect transistor, simulating with the behavioural model is a common approach. However, due to different manufacture batches, processes and application conditions, the model parameters need to be calibrated after being extracted from the datasheet. To improve the transient precision of behavioural model for SiC power MOSFET and provide technicians with more realistic and accurate simulation results, in this study, a calibration method for the behavioural model parameter is proposed by analysing the sensitivity of the parameters on the switching characteristics. The analysis shows that the sensitivity of the parameters affecting the SiC MOSFET behaviour model in sequence are C gd , C gs , V th , R g,int , g f , L d , L S , C ds and C Dj . Using this sensitivity influence order, the corresponding model parameters can be corrected by observing the deviations between the experimental and simulation waveforms. Finally, double pulse tests were carried out and the comparison results indeed verify its accuracy under different working conditions. The proposed method is verified by Saber simulation software, and it can also be applied to other simulation software.

Characterization and modeling of the reverse behavior of a vertical power MOSFET

AbstractIn this work, the static and dynamic reverse behavior of a vertical structure Si power MOSFET is characterized. The BSIM3 model is adopted and extended to describe the channel current considering asymmetric channel behavior caused by the vertical structure. The diffusion capacitance of the body diode is analyzed, which is critical for the reverse recovery behavior but currently not precisely defined in power MOSFET models. To accurately depict the reverse recovery current, two diode models with diffusion capacitance definitions based on the solution of different methods are built into the MOSFET model and their performance is compared. The result shows that to describe the reverse recovery of the body diode for smaller current range simulation, the stored charge model is recommended, but when scalability is necessary, the carrier distribution model is more suitable.

Silicon Carbide Power MOSFET Model: An Accurate Parameter Extraction Method Based on the Levenberg–Marquardt Algorithm

This letter proposes an accurate parameter extraction method based on the Levenberg–Marquardt algorithm for a silicon carbide (SiC) power mosfet model. An improved compact model uses this method to study the static behavior of SiC power mosfet s according to the temperature and the input voltage. The simulation results obtained with this proposed method fit perfectly the measurements and accurately describe the static behavior of 1200 V Gen 2 SiC mosfet s. The extracted model parameters (threshold voltage, saturation region transconductance, and transverse electric field parameter) are evaluated to analyze the temperature impact and understand the physical behavior of 1200 V Gen 2 SiC power mosfet .

SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation

The purpose of this paper is to describe, for the first time, a global transient electrothermal model of (SiC) power MOSFETs during accidental short-circuit (SC) operations. The developed models allow to analyse an inverter-leg malfunctioning. A thermal model of the SiC MOSFET dies combined with extensive experimentations allow to develop models of the gate leakage current and of the drain saturation current during SC events. After verifying the robustness of the proposed elementary models, an original global circuit model with an easy implementation using a commercial circuit simulation tool is proposed and discussed. This circuit model can be used in order to develop protection schemes against SC faults.

A Temperature-Dependent SPICE Model of SiC Power MOSFETs for Within and Out-of-SOA Simulations

This paper presents a temperature-dependent SPICE model for SiC power MOSFETs. The model describes the static and dynamic behavior and accounts for leakage current and impact ionization. The technology-dependent mosfet parameters are extracted from characterization measurements and datasheets. SPICE standard components and analog behavior modeling blocks are adopted for the model implementation. The model ensures a good agreement with experimental data over a wide temperature range, even under out-of-safe-operating-area (SOA) conditions close to the failure occurrence.

Improved SiC Power MOSFET Model Considering Nonlinear Junction Capacitances

Silicon carbide (SiC) power metal–oxide–semiconductor field-effect transistors (mosfet s) have been applied in high-power and high-frequency converters recently. To effectively predict characteristics of SiC power mosfet s in the design phase, a simple and valid model is needed. In this paper, a simple improved SiC power mosfet behavioral model is proposed using SPICE language. Key parameters in the model are analyzed and determined in detail, including parasitic parameters of the power module, steady-state characteristic parameters, and nonlinear parasitic capacitances. The effect of negative turn- off gate drive voltage is considered and a continuously differentiable function is proposed to describe the gate–source capacitance. Experimental validation is performed under a double pulse circuit employing an N -channel power mosfet half-bridge module CAS300M12BM2 (Cree Inc.) rated at 300 A/1200 V. The main switching dynamic characteristic parameters of the model have been compared with those of the measured results. The results show that taking gate–source capacitance as a linear value as most previous models do will cause significant turn- on deviations between experiment and simulation results, while the improved model is more accurate compared with the measured results.

Measurement and modeling of gate–drain capacitance of silicon carbide vertical double-diffused MOSFET

Silicon carbide (SiC) is considered as one of the key materials to realizing device operations in high-temperature, high-frequency, and high-power applications. When designing circuits in such applications, an accurate simulation model for SiC power MOSFETs is important. Among others, the gate–drain capacitance, Cgd, is particularly important in building the SiC MOSFET model because the capacitance significantly affects switching behavior of the device. In this paper, a Cgd model, which is based on a unified representation of surface potential, is proposed for enhancing the accuracy of circuit simulations. By considering the operation of vertical power SiC MOSFETs, the proposed capacitance model correctly accounts for the capacitance modulation effect due to the channel that is formed when the gate voltage is higher than the drain voltage. In addition, a Cgd measurement method is also proposed in order to characterize Cgd in a wider voltage range. Through experiments using a commercial SiC power MOSFET, it is demonstrated that the proposed model successfully approximates the capacitance in a wide range of bias voltages without stitching separate equations. It is also demonstrated that the proposed model is twice as accurate as the conventional one.

A Physics-Based Compact Model of SiC Power MOSFETs

The presented compact model of SiC power MOSFETs is based on a thorough consideration of the physical phenomena which are important for the device characteristics and its electrothermal behavior. The model includes descriptions of the dependence of channel charge and electron mobility on the charge of interface traps and a simple but effective calculation of the voltage-dependent drain resistance. Comparisons with both physical 2-D device simulations and experiments validate the correctness of the modeling approach and the accuracy of the results.

Power-Loss Prediction of High-Voltage SiC-<sc>mosfet</sc> Circuits With Compact Model Including Carrier-Trap Influences

The paper aims at clarifying the carrier-trapping influence on the electrical characteristics of silicon carbide (SiC) power MOSFETs and its inclusion in the simulation of SiC power mosfet -based circuits. Special focus is given on the degradation of the switching characteristics due to carrier trapping at SiC/SiO2 interface defects. A compact SiC power mosfet model, considering the trap density in the framework of a complete surface-potential description, has been developed by for accurate circuit simulation including power-loss prediction. The carrier trapping is verified to cause a switching delay, which results in switching loss increase. To achieve low power loss, trap-density reduction is shown to be vital. The maximum allowable trap density, which does not affect switching power loss, is discussed.

Accurate power MOSFET models including quasi-saturation effect

In this paper, two accurate power MOSFET models including quasi-saturation effect are presented. These models have no internal node voltages determined by the circuit simulator and use one JFET or one depletion mode MOSFET transistors controlled by an "effective" gate voltage taking into account the quasi-saturation effect. The proposed models achieve accurate simulation results with an average error percentage less than 9 %, which is an improvement of 21 % compared to the commonly used standard power MOSFET model. In addition, the models can be integrated in any available commercial circuit simulators by using their analytical equations. A description of the models will be provided along with the parameter extraction procedure.

A new thermal model for power MOSFET devices accounting for the behavior in unclamped inductive switching

The main aim of this work was the analysis of the transient thermal behavior of several typologies of power MOSFET devices. The commonly used thermal model has been applied to different device families with different breakdown voltages. The large difference between the experimental results and the simulation runs, performed with the classic approach for some kinds of devices, leads to correct the traditional mathematical thermal model and to build up a new one in which the real size of the epitaxial layer is taken into account. A new model will be shown performing a better fitting with the experimental evidence and confirming its suitability for all the proofed families of devices. The mathematical process developed to build up the model is shown, and a comparison is carried out between the measured temperatures on the device and estimation by the model. The results discussed in the paper show how the developed model allows a better fitting of the achieved model with the experimental measurements and demonstrate the suitability of the proposed approach.