Model parameter calibration method of SiC power MOSFETs behavioural model

Abstract

To accurately estimate the switching characteristics of silicon carbide (SiC) metal-oxide-semiconductor field effect transistor, simulating with the behavioural model is a common approach. However, due to different manufacture batches, processes and application conditions, the model parameters need to be calibrated after being extracted from the datasheet. To improve the transient precision of behavioural model for SiC power MOSFET and provide technicians with more realistic and accurate simulation results, in this study, a calibration method for the behavioural model parameter is proposed by analysing the sensitivity of the parameters on the switching characteristics. The analysis shows that the sensitivity of the parameters affecting the SiC MOSFET behaviour model in sequence are C gd , C gs , V th , R g,int , g f , L d , L S , C ds and C Dj . Using this sensitivity influence order, the corresponding model parameters can be corrected by observing the deviations between the experimental and simulation waveforms. Finally, double pulse tests were carried out and the comparison results indeed verify its accuracy under different working conditions. The proposed method is verified by Saber simulation software, and it can also be applied to other simulation software.