Abstract
In order to accurately simulate the switching characteristics of Silicon Carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFET), the model parameters need to be optimized after being extracted from the datasheet. To improve the transient precision of behavior model for SiC power MOSFET in PSpice, in this study, an optimization method for the model parameter is proposed. By analyzing the influence of the parameters on the switching transition characteristics of SiC power MOSFET, it can be concluded that the sensitivity of the parameters affecting SiC MOSFETs’ switching behavior in sequence is $C_{gd}, C_{gs}, g_{m}, V_{th}, L_{s}, L_{d}$ and Cds. Thus, an effective method to optimize the parameters is proposed by adjusting the sensitive parameters in sequence, according to the deviations between experiment and simulation results. Finally, the universality and accuracy of the improved model is verified by double pulse test under different load current.
Published Version
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