Abstract
AbstractIn this work, the static and dynamic reverse behavior of a vertical structure Si power MOSFET is characterized. The BSIM3 model is adopted and extended to describe the channel current considering asymmetric channel behavior caused by the vertical structure. The diffusion capacitance of the body diode is analyzed, which is critical for the reverse recovery behavior but currently not precisely defined in power MOSFET models. To accurately depict the reverse recovery current, two diode models with diffusion capacitance definitions based on the solution of different methods are built into the MOSFET model and their performance is compared. The result shows that to describe the reverse recovery of the body diode for smaller current range simulation, the stored charge model is recommended, but when scalability is necessary, the carrier distribution model is more suitable.
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