A Compact Model Adopting the EKV Model for a Silicon Vertical Power MOSFET

Abstract

This work presents an approach adopting the industry standard EKV2.6 model with necessary extensions to build an accurate compact model for Si vertical power MOSFETs. The EKV2.6 model, which is developed for CMOS logic devices, is adopted with its proven robustness and fidelity to describe the channel behavior of power MOSFETs. Considering the vertical MOSFET structure, the extended components including the drift region, body-diode and the drain-gate capacitance are defined as model extensions. The static characteristics considering the thermal effects, the voltage-dependent capacitance and transient behavior of the body diode are measured as the reference for the model parameter extraction. The specific parameter extraction strategy is provided for the proposed model, and the parameter extraction result shows that the proposed model is able to describe the device characteristics precisely. The method is exemplified on a commercially available 55 V 30 A power MOSFET.