Abstract

This paper describes a new way to create a behavioral model for power MOSFETs with highly nonlinear parasitic capacitances like those based on superjunction (SJ) principles. The process ranges from a simple measurement to the final model for SPICE simulations. One of the benefits of the proposed modeling technique is that it does not require any information about the voltage-dependent capacitances of the MOSFET from the data sheet but instead relies on a simple measurement method using a vector network analyzer. The measurement data can be used for modeling all parasitic capacitances and inductances in the SPICE model. Compared to existing simulation models by the manufacturer, the proposed model promises better convergence, more accurate high-frequency behavior and faster simulation time. The advantages and disadvantages of this modeling technique are discussed.

Highlights

  • Today, modern switched power electronic systems can be found in a variety of applications such as AC adapters, solar inverters, battery chargers, variable frequency motor drives, etc

  • This paper shows how behavioral models for SPICE simulation can be created using a simple measurement with a vector network analyzer (VNA)

  • The model proposed in this study only claims to offer a solution whose results correspond to the most complex manufacturer model with respect to its high-frequency behavior but with simpler methods and shorter simulation time which is successful

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Summary

Introduction

Modern switched power electronic systems can be found in a variety of applications such as AC adapters, solar inverters, battery chargers, variable frequency motor drives, etc. These capacitances are defined in terms of the equivalent circuit capacitances as: Ciss = CGS + CGD (with CDS shorted); Crss = CGD; Coss = CDS + CGD (1). A voltage controlled current source models the behavior of the parasitic capacitance (CGS, CGD and CDS in Fig. 3) using the following equation as an example for CDS: iDS. The values are read by a voltage controlled voltage source (VCGS, VCGD and VCDS in Fig. 3) by using a classical look-up table whose interpolated output voltage is used in equation (4) for the values of CDS (VDS )

Modeling of output characteristic
Model comparison
Conclusion
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