Abstract
A simple and efficient parameter extraction method for Silicon Carbide (SiC) power MOSFET model is described. This method uses nonlinear optimization algorithm to find the optimal set of parameters to model. The optimizer algorithm starts with initial guess parameters, extracted from measurement, to provide a set of parameters minimizing errors between model and measurements data in entire operating regions of the device. The starting initial guess parameter values give to the algorithm a closed solution to obtain the optimal set of model parameters with reduced iteratives. The Levenberg-Marquardt (LM) algorithm will be used in this work. The efficiency of the proposed extraction method is proved with the good agreements obtained between the model and the measurements.
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