A Temperature-Dependent SPICE Model of SiC Power MOSFETs for Within and Out-of-SOA Simulations

Abstract

This paper presents a temperature-dependent SPICE model for SiC power MOSFETs. The model describes the static and dynamic behavior and accounts for leakage current and impact ionization. The technology-dependent mosfet parameters are extracted from characterization measurements and datasheets. SPICE standard components and analog behavior modeling blocks are adopted for the model implementation. The model ensures a good agreement with experimental data over a wide temperature range, even under out-of-safe-operating-area (SOA) conditions close to the failure occurrence.