We have fabricated a n-μc-Si:H/p-a-Si:H/p-a-SiC:H tunnel junction for a protocrystalline silicon (pc-Si:H) multilayer/amorphous silicon (a-Si:H) tandem solar cell. In order to improve the hole injection from the a-Si:H bottom cell, we insert a thin conductive p-a-Si:H layer between the n-μc-Si:H and p-a-SiC:H layers. We deposit all layers by the photo-CVD method. Due to ion-damage free characteristics, we could obtain high quality films. We measure the current–voltage (I–V) characteristic and activation energy in order to characterize the fabricated tunnel junction. We have applied this n–p–p tunnel junction to a pc-Si:H multilayer/a-Si:H tandem solar cell and achieved 9.24% energy conversion efficiency whereas only 7.84% efficiency was obtained for a tandem solar cell with no p-a-Si:H insertion layer.