Abstract
The results of structure investigation are presented for silicon nitride films prepared by the photo-CVD method from a SiH 4 and NH 3 gas mixture with added mercury vapour. The low-pressure mercury lamp was used as a light source to deposit silicon nitride at low substrate temperature (250°C). For structure investigation of deposited films ir and ESR spectroscopy were used as tools for hydrogen bonding and defect evaluation, respectively. Photo-CVD silicon nitride films were found to be basically similar to PECVD silicon nitride, except for larger spin densities. In both cases a substantial amount of hydrogen is incorporated in the deposited film and the g-value and linewidth of ESR spectra are in good agreement.
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