Abstract
This work presents the results of the study of structural and electrical transport properties of the iron-insulator discontinuous multilayers (DMIMs). SiO2, HfO2, and MgO were chosen as the materials for the insulating layers. The discontinuous multilayers were prepared by the sequential magnetron sputtering on ceramic substrates. Obtained systems were annealed at different temperatures in an Ar + N2(2 %) environment using an annealing furnace with a continuous gas flow. Crystal structure analysis showed that the effect of annealing on the crystal structure of the samples varies and depends on the annealing temperature and the type of insulator. It has been demonstrated that the formation of iron oxide during annealing can be reduced by using HfO2 as the insulating layer material. The resistivity and temperature coefficient of resistance variation with temperature and the effective thicknesses of the ferromagnetic layers were analyzed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
