Abstract
A high reverse breakdown voltage hydrogenated amorphous carbon (a-C:H)/crystalline silicon (c-Si) heterojunction diode has been successfully prepared by the photochemical vapour deposition (photo-CVD) method. This method has the advantage of being free from RF radiation. There is a lower density of fixed charges at the Al/a-C:H interface and in the bulk of a-C:H film. Hence the photo-CVD a-C:H/c-Si heterojunction diode shows smaller voltage offset in forward bias and breakdown voltage shrinkage in reverse bias compared to those deposited by plasma enhanced-CVD (PECVD).
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