Abstract
Epitaxial Si films have been grown by the mercury sensitized photo-CVD method using a SiH 4/H 2 gas mixture with and withour SiH 2Cl 2 at a substrate temperature lower than 200°C. The effect of SiH 2Cl 2 on low-temperature Si epitaxy was investigated. The structural properties of the obtained films were characterized by reflection high-energy electron diffraction (RHEED), IR and Raman spectroscopy. It was found that the film quality was improved by the addition of SiH 2Cl 2. The most probable role of SiH 2Cl 2 is etching of the growing surface, resulting in a rigid Si network.
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