Abstract
A theoretical analysis conducted in order to raise the efficiency of amorphous-silicon (a-Si) solar cells is discussed. Based on the analysis, the quality of the i and p layers was improved. A high-quality a-Si film with a lower impurity concentration and lower defect density than conventional films was fabricated using the super chamber. A reduction in damage to the transparent conductive oxide and an improvement in p and i interface properties was achieved by using a photo-CVD method. This same method was used to study superlattice structure films, to fabricate high-conductivity films with a wider optical bandgap than conventional a-SiC films, and to improve sensitivity in the short-wavelength region. B(CH/sub 3/)/sub 3/ was used as a p-type doping gas for a-Si film that had a higher quality than that fabricated using B/sub 2/H/sub 6/. These technologies made possible a conversion efficiency of 11.7% for 1-cm/sup 2/ single-junction solar cells and a total area conversion efficiency of 9.60% for 100-cm/sup 2/ single-junction integrated-type submodules. >
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