Abstract
A significant improvement in structural, optical and electrical properties of a-SiGe:H films grown by the photo-chemical vapour deposition method has been achieved through a selection of chamber pressure, substrate temperature and hydrogen dilution. By varying these process parameters, a-SiGe:H films having dominant silicon and germanium monohydride bonds were produced (from IR analysis) which have less microstructure related disorder, sharp valence band tail width ( E 0) and low dangling-bond density ( N s). As a consequence the magnitude of the photogenerated carrier (generation efficiency-mobility-lifetime product, ημτ) improved by two orders of magnitude. This resulted in a photoconductivity (σ Ph) of 10 −5 S cm −1 along with a dark conductivity (σ D) of 10 −10 S cm −1 for a-SiG:H film having a band gap of 1.5 eV.
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