In this research, the dielectric characteristics of fabricated Al/(ZnFe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> -PVA)/p-Si structures have been investigated in wide range frequency and voltage. Thus, by deriving capacitance-conductance (C-G/ω) measurements the main parameters of the metal-polymer-semiconductor (MPS) structure such as complex dielectric constants (ϵ' and ϵ''), loss tangent (tanδ), complex electric modulus (M' and M'') and ac electrical conductivity (σ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ac</sub> ), were acquired at frequency and voltage ranges of 1 kHz - 1MHz and (±5V). As a result of the experiment, it was observed that the presence of negative capacitance (NC) at low frequencies differently affects the dielectric properties of the structure. Although the NC effect disappeared at high frequencies by the reduction of the effect of many parameters such as series resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ss</sub> ) and interface states (N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ss</sub> ) with frequency increment, the dielectric properties of the structure varied especially in the reverse bias region. Ultimately, it has been observed that the dielectric properties of the structure are highly dependent on frequency, voltage, N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ss</sub> , and polarization.