Abstract
In this study, the impact of the negative capacitance (NC) effect on process-induced variations, such as work function variation (WFV), random dopant fluctuation (RDF), and line edge roughness (LER), was investigated and compared to those of the baseline junctionless nanowire FET (JL-NWFET) in both linear (Vds = 0.05 V) and saturation (Vds = 0.5 V) modes. Sentaurus TCAD and MATLAB were used for the simulation of the baseline JL-NWFET and negative capacitance JL-NWFET (NC-JL-NWFET). Owing to the NC effect, the NC-JL-NWFET showed less variation in terms of device performance, such as σ[Vt], σ[SS], σ[Ion/Ioff], σ[Vt]/µ[Vt], σ[SS]/µ[SS], and σ[Ion/Ioff]/µ[Ion/Ioff], and enhanced device performance, which implies that the NC effect can successfully control the variation-induced degradation.
Highlights
In the past a few decades, the downsizing of metal oxide semiconductor field effect transistors (MOSFETs) has increased the number of transistors in integrated circuits (ICs), and improved their performance such as high-frequency performance [1]
Sentaurus TCAD and MATLAB were used for the simulation of the baseline JL-NWFET and negative capacitance JL-NWFET (NC-JL-NWFET)
Owing to the NC effect, the NC-JL-NWFET showed less variation in terms of device performance, such as σ[Vt], σ[SS], σ[Ion/Ioff], σ[Vt]/μ[Vt], σ[SS]/μ[SS], and σ[Ion/Ioff]/μ[Ion/Ioff], and enhanced device performance, which implies that the NC effect can successfully control the variation-induced degradation
Summary
In the past a few decades, the downsizing of metal oxide semiconductor field effect transistors (MOSFETs) has increased the number of transistors in integrated circuits (ICs), and improved their performance such as high-frequency performance [1]. To address these scaling-down issues of MOSFETs, MOSFET structures were evolved over the years, and different types of Multi-Gate FETS (MuGFETs) have been proposed [2]. FerFreorerFloeeecrlterrcoiFctere(lirAcerco(l:AterHllieF:ccfeHOt(rrArf2iOco)l:etr2heHl)emicccfokOnterna2rien)ccsitrtvsephe(moiTcvlfnakoer)nalitnzeaagsttsepio((oTnElfca(e))Prirz)ation (Pr) EFqeurrivoaelleencttroixci(dAelt:hHicfkOne2)ssco(Teorxc)ive voltage (Ec) Equivalent oxide thickness (Tox)
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