Abstract
In this study, we investigated the impact of random dopant fluctuation (RDF) on junctionless (JL) fin field-effect transistors (FinFETs) with ferroelectric (FE) negative capacitance (NC) effect. The RDF-induced variations were captured by using built-in Sano methodology in three-dimensional technology computer-aided design (TCAD) simulation. Compared to the regular JL-FinFETs, the variations in JL-FinFETs with NC effect (NCJL-FinFETs) was observed to be less via statistical Monte Carlo analysis, which further enhanced its performance as well. The evaluation and estimation of threshold voltage (V T ), ON-state current (I on ), OFF-state current (I off ), and subthreshold swing (SS) by different FE layer thicknesses indicated reduction in the standard deviations of V T (δV T ) and I on (δI on ) by 34.7% and 7.08%, respectively; the OFF-state current and its standard deviation shrank by approximately three orders of magnitude than the JL-FinFET counterpart. Although δSS was not monotonous, the SS was significantly improved to sub-60 mV/decade. To sum up, the regular JL-FinFETs containing the FE layer as NC effect not only improved the electrical performance, but also led to the resilience of the RDF-induced statistical variability.
Highlights
Over the years, fabrication of the field-effect transistors (FETs) with p-n junctions requires very steep doping concentration gradients between the silicon-bulk channel and source/drain (S/D) region [1,2]
JL-fin field-effect transistors (FinFETs) with the negative capacitance (NC) effect exhibit more tolerance toward the transfer characteristics fluctuation induced by the random dopant fluctuation (RDF)
We investigated the impact of RDF on the conventional JL-FinFETs with NC effect
Summary
Fabrication of the field-effect transistors (FETs) with p-n junctions requires very steep doping concentration gradients between the silicon-bulk channel and source/drain (S/D) region [1,2]. Negative capacitance field-effect transistors (NCFETs), which are fabricated by drawing into the ferroelectric (FE) material behaving as a series of NC stacked on the gate of the traditional complementary metal-oxide-semiconductor (CMOS) devices generally possess a higher performance and lower power consumption [8,9,10]. Random dopant fluctuation (RDF) as one of the most concerned variation sources for ultra-small semiconductor devices with further scaling has shown that its impact on the JL-FETs is more serious than the IM counterparts due to the heavy doping of dopant atoms [12,13,14]. The impact of doped HfO2 as different FE layer thickness on NC JL-FinFETs has been investigated in detail
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