Gallium Nitride (GaN) is a semiconductor material distinguished by its exceptional attributes and potential for diverse applications. Characterized by high electron mobility, substantial saturation drift velocity, an extensive forbidden energy band, and remarkable thermal stability, GaN demonstrates versatility in various electronic applications. These include high-frequency power amplifiers, luminous high-brightness Light Emitting Diodes (LEDs), and lasers. Advancements in synthesis techniques, such as gas-phase epitaxy, hydrothermal, and solution methods, have facilitated the production of high-quality GaN thin films. The research on GaNs physical properties encompasses an in-depth analysis of its structure, crystallographic defects, and optical characteristics, alongside investigations into the performance of optoelectronic devices. Future research trajectories are oriented towards developing scalable synthesis methodologies, designing and optimizing energy-efficient devices, and enhancing sustainable and eco-friendly attributes. Nonetheless, challenges persist in the realms of cost efficiency and reliability of GaN materials, necessitating further refinement in design and processing techniques and broadening the spectrum of potential applications. With no doubt, GaN materials exhibit significant potential for future development and are poised to assume a crucial role in the advancement of science and technology.