Abstract
The results of the elastic and microplastic study of GaN single crystals and polycrystalline slabs are presented. Both types of the crystals grown by gas-phase epitaxy in HVPE reactor at deposition on sapphire and ceramic substrates respectively have a specific of structure. It was shown that crystals in slabs are grown in [10-10] perpendicular to substrate but have not primary directions in plane of substrate. The single crystals contains deep V-shaped defects (pits). The experimental results have been analyzed on the basis of existing the theoretical aspects of the influence of dislocations and grain boundaries on the acoustic and mechanical properties of crystals.
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