Abstract
The first results on the development of an original power GaAs-based field-effect transistor with a vertical channel controlled by a p–n junction are presented. The main manufacturing feature is the use of two separate epitaxial growth processes when forming the transistor structure. The transistor part containing the drain, drift, and gate regions is grown by liquid-phase epitaxy. Metalorganic gas-phase epitaxy is used to form the channel and source regions.
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