Contact engineering in vertical hybrid field effect transistor

Abstract

Here we report a Vertical Hybrid Field Effect Transistor (VHFET) that shows an improved saturated output characteristics. Up till today the injection limited regime in vertical transistor was realized using an injection barrier as well as a buried semiconductor (SC) under the source contact. Using previous reported simulations and a new fabrication technique we successfully fabricated and characterized a functional device which operates at the injection limited regime without the need of a current limited source injection barrier. The new architecture shows better gate control with 5 ∙ 105 on/off ratio and 240 mV/dec subthreshold swing. Furthermore, we can set design rules for the vertical source contact to enable high performance Vertical Field Effect Transistors (VFET), some of which are applicable to any short-channel transistor.