Abstract
Abstract. The phase diagrams and growth conditions of InxAl1-xN solid solutions by magnetron sputtering, molecular beam and gas-phase epitaxy from organometallic compounds are analyzed. Mutual equilibrium solubility in a wide range of compositions of thick layers of this solution is close to zero. Moreover, the presence of elastic misfit stresses for thin InxAl1-xN films narrows the unstable mixing region. Optimization of the growing conditions makes it possible to obtain the homogeneous high-quality InxAl1-xN layers suitable for the production of a barrier layer in an InAlN/GaN HEMT.
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