Abstract
The phase diagrams of the InxAl1 –xN solid solutions and conditions for their growth by magnetron sputtering and molecular beam and metalorganic vapor phase epitaxy are analyzed. The mutual equilibrium solubility in a wide range of compositions of the thick solution layers is near zero. Elastic misfit stresses in the InxAl1 –xN thin layers narrow the unstable immiscibility gap. By optimizing the growth conditions, one can obtain high-quality homogeneous InxAl1 –xN films for fabricating barrier layers in InAlN/GaN high electron mobility transistors.
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