Abstract
The first results on the creation of an original power GaAs field-effect transistor with a vertical channel controlled by the p-n junction are presented. The main technological feature is the use of two separate processes of epitaxial growth in the formation of the transistor structure. The part of the transistor containing the drain, drift and gate areas is grown by liquid-phase epitaxy. The technology of organometallic gas-phase epitaxy is used to form the areas of the channel and the source.
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