Researchers are inclining toward heterostructures suitable lattice matching, in Tunnel FETs to eliminate the difficulties of decreased On-Current, subthreshold swings, and ambipolar behavior. Nowadays, Electrostatic doping (ED) is a scrutinized substitute device for creating areas with a high electron or hole density to the conventional doped devices. This manuscript proposes an Electrostatic Doped Heterostructure Vertical Si(1-x)Gex/Si Nanotube Tunnel Field Effect with performance scanned by analyzing the different device parameters, considering the energy band diagram, concentrations of electrons, holes, potential, and electric field. In comparison to the Nanowire TFETs, the area, and rate of tunneling of the proposed device stand superior with a better ION/IOFF ratio of 1.56∗1013 and a lower OFF-current of about ∼10−18A/μm. The device exhibits a Drain current (IDS) of 2.39∗105A/μm. The architecture of the suggested device possessing Si(1-x)Gex/Si structure exhibits enhanced characteristics like improved steepness of the sub-threshold slope, ION/IOFF ratio, drain current, and lowered OFF-current.