Analytical modeling of drain current for DG-Graphene Nanoribbon Vertical Tunnel FET

Abstract

The semi-classical current transport model is used in this study to examine the drain current model for Double-Gate (DG) Dual-Material-Gate (DMG) Graphene-Nanoribbon (GNR) Vertical TFETs. It takes into account the contact potential (VGS, VDG), the impact of the oxide thickness (tOX), and the carrier mobility (μ). The device’s channel length is 50 nm, and the energy bandgap is 0.26 eV when the GNR ribbon width is 10 nm. The bandgap varies with the GNR ribbon width. The data from the simulation of TCAD tools are compared to an analytical result of the drain current. The current transport model shows good agreement. It is clear that a GNR with a 5 nm width can switch ON and OFF at 0.5 V drain voltage, which shows low power bias operation. The suggested GNR-TFET is capable of producing an average subthreshold current of 16 mV/Dec, 1.74 × 10−4 A/μm on-state current, and 1.66 × 10−18 A/μm off-state current. The exceptional performance is made possible by the narrow bandgap, high mobility, and two-dimensional (2-D) nature of GNR.