Parameters Variation Effect on Drain Current for GAAFET: Analysis

Abstract

In the current scenario of nanoscale devices, both OFF-state and ON-state current are imperative to calculate power consumption. This paper shows the study and analysis of OFF-state and ON-state current which have been done along with the variation in channel length (Lg), channel diameter (D <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Si</inf> ), gate oxide material, and gate electrode material for Gate all around FET (GAAFET). The variation in D <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Si</inf> is considered with the help source-channel barrier height of energy band diagram and it is observed that the OFF-state current is reduced by approximately 10 orders for the channel diameter of 30–10 nm. Moreover, the variation in channel length is considered for BJT effect which occurs in GAAFET when Lg is reduces to nanoscale dimensions and it is observed that the OFF-state current is reduced by approximately 100 times for the Lg of 20–10 nm. Further, the variation in gate electrode and oxide material for ION and I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf> are done in the present paper and it is observed that the Gold provides lower I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf> with the large workfunction and Hf02 provides higher ION with the higher dielectric constant. Moreover, the use of gold in semiconductor device fabrication helps to increase the electrical conductivity and resists the corrosion which leads the better performance.