Power Applications Research Articles

Novel T-Shaped Gate Structure of AlGaN/GaN HEMTs on Si for RF Application

Due to the high electron saturation velocity and breakdown electric field, GaN-based high electron mobility transistors (HEMTs) have been widely used in high frequency and power application, such as telecommunication, satellite communication, and radar system [1]. Since first demonstration of AlGaN/GaN HEMTs in 1993 [2], the RF performance of these device has continuously improved by the progress on epitaxy and device scaling technology [3].The current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax) from the small-signal equivalent circuit of the HEMT are derived by the following equations [4].From these equations, it can be concluded that in order to achieve high frequency operation, HEMTs should be designed with a T-shaped gate structure that simultaneously achieves low gate resistance (Rg) and low parasitic capacitance (Cgs and Cgd). However, there are complex fabrication processes to form the T-shaped gate. Typically, the T-shaped gate structure is implemented through electron beam lithography process using a tri-layer resist such as PMMA/PMGI/PMMA, which requires multiple exposures or developments. Multiple exposures can cause overlay errors that can significantly affect the T-shaped gate with smaller gate lengths [5]. Also, it is difficult to obtain an undercut structure that enables a good lift-off and guarantees a high yield due to the need for precise dose control. In addition, since the T-shaped gate has an unstable structure in which a narrow foot supports the weight of a wide head, the gate may collapse during a subsequent process.In this work, we fabricated a novel T-shaped gate using the negative e-beam resist HSQ, which offers a simple T-shaped gate fabrication process. The HSQ that was exposed to e-beam is located underneath the gate head and on both sides of the gate foot in our novel T-shaped gate design, providing a robust structure. The HSQ-assisted gate HEMTs exhibit comparable DC/RF performance compared to conventional T-shaped gate HEMTs. Acknowledgement This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MIST) (No. NRF-2021M3C13097672).

Synchrotron X-Ray Topography Studies for Defect Formation at the Early Stage of PVT-Grown 4H-SiC Crystals

Silicon Carbide (SiC), typically 4H-SiC, is replacing conventional silicon materials for high power and high frequency applications due to its excellent electrical and thermal properties [1]. However, high quality SiC wafers with low defect density are still in urgent need for automotive and energy saving applications. SiC wafers are obtained from bulk growth by physical vapor transport (PVT) method and considerable efforts have been expended to optimize growth process to lower defect densities. One major approach is the study of initial stages of crystal growth as most defects are nucleated at this stage and propagate into the boule. Ailihumaer et al [2] demonstrated the behaviors of threading edge dislocations (TEDs), threading screw dislocations (TSDs)/threading mixed dislocations (TMDs), and basal plane dislocations (BPDs) across the seed/newly grown layer interface in PVT-grown 4H-SiC. Sanchez et al [3] revealed the nucleation of TEDs and TSDs at the initial growth stage in PVT-grown SiC.However, more detailed investigations are still in demand for PVT grown 4H-SiC crystals during initial stage of growth. This study investigates 4° off-axis 4H-SiC wafers with several hundred microns of initial-stage growth PVT method. Synchrotron X-ray topography (SXRT) technique is employed and shows dramatically modified defect distribution across the seed/newly grown layer interface (Figure 1). The formation of Shockley stacking fault starting at initial stage of crystal growth is suggested as partial dislocations running along <11-20> directions on basal plane are observed to form rhombus shapes (Figure 2). Prismatic slip is observed to take place near the wafer edges and prismatic dislocations undergo cross slip to form unique dislocation configurations. A statistical analysis on defect changes across the seed/newly grown layer is being carried out and the results will be reported. These results will be complemented by observations from Nomarski optical microscopy (NOM) and Raman Spectroscopy studies to propose the formation mechanism of defects across the seed/newly grown layers.

Covalently Joined Electrode Architectures for Extreme Fast Charging Li-Ion Batteries

Li-ion batteries are the backbone of all electric vehicles (EVs) in production today [1]. However, they compete poorly against the few-minute refueling time of fossil fuel powered vehicles [2, 3]. To successfully replace fossil fuel powered vehicles, the EV batteries must support charging rates under the 15-minute mark as determined by the eXtreme Fast Charging (XFC) standard defined by the U.S. Department of Energy [4]. When subjected to XFC charging rates, well-known problems of lithium plating and delamination plague graphite anodes due to local potential gradients and binder degradation respectively [5].Our work replaces the traditional polymer binder with conductive titanium carbide interconnects that covalently join graphite particles as well as bond them to the current collector [6]. This new architecture demonstrates ~400% increase in electrical conductivity compared to traditional architectures with polymer binders while maintaining interparticle integrity and improving adhesion. The adhesion and mechanical properties are provided by conductive chemical bonds mitigating delamination as these novel bonds suffer less mechanical and chemical degradation under high current rates than adhesion provided by polymer binders. The improved conductivity was also utilized to form a solid electrolyte interphase (SEI) at rates up to 4C reducing the ionic impedance of the SEI interface significantly [7]. The improved graphite electrodes can sustain 15-minute charge maintaining 80% of the specific capacity of the graphite particles for 800 cycles at commercially relevant loadings. Our studies introduce an effective strategy to engineer Li-ion battery electrode architectures that simultaneously improve electrical and ionic conductivity mitigating lithium plating and delamination under XFC charging rate needed for the mass adoption of EVs. Habib, A.A., S. Motakabber, and M.I. Ibrahimy. A comparative study of electrochemical battery for electric vehicles applications. in 2019 IEEE International Conference on Power, Electrical, and Electronics and Industrial Applications (PEEIACON). 2019. IEEE.Balali, Y. and S. Stegen, Review of energy storage systems for vehicles based on technology, environmental impacts, and costs. Renewable and Sustainable Energy Reviews, 2021. 135: p. 110185.Andwari, A.M., et al., A review of Battery Electric Vehicle technology and readiness levels. Renewable and Sustainable Energy Reviews, 2017. 78: p. 414-430.Dufek, E.J., et al., Developing extreme fast charge battery protocols–A review spanning materials to systems. Journal of Power Sources, 2022: p. 231129.Ahmed, S., et al., Enabling fast charging–A battery technology gap assessment. Journal of Power Sources, 2017. 367: p. 250-262.Rangom, Y., Covalently Joined Carbonaceous and Mettalloid Powders by Carbide-Based Interconnects and Method of Fabrication for High-Performance Electrodes. 2021: United States preliminary patent #63/248,293.Rangom, Y., T.T. Duignan, and X. Zhao, Lithium-ion transport behavior in thin-film graphite electrodes with SEI layers formed at different current densities. ACS Applied Materials & Interfaces, 2021. 13(36): p. 42662-42669. Figure 1

Impact of Reinforced Polymer Electrolyte Membrane Scratch on Fuel Cell Durability Using 4D X-Ray Computed Tomography Technique

PEMFCs, or Polymer Electrolyte Membrane Fuel Cells, can be used in both stationary power and transportation applications and are promising for use in heavy duty electric vehicles due to their high energy density, ability to be refueled quickly, and extended range, which are key challenges for battery-powered vehicles [1]. Despite these advantages, there are still obstacles preventing the widespread commercialization of PEMFCs, one of which is production cost [2]. To reduce manufacturing costs, it is imperative to ensure that quality control rejects and scraps are minimized. Moreover, enhancing component integration defect detection would ensure the durability of the fuel cell and enhance its operational lifetime. However, robust quality control requires a thorough understanding of potential non-uniformities and their effects on fuel cell performance and operational degradation.Non-uniformities of the membrane electrolyte assembly (MEA) can result in durability issues by damaging the membrane and making it more vulnerable to mechanical and chemical stress during the operation [3]. Several studies have been done on cation contamination and membrane pinholes and their effect on fuel cell performance and durability [4,5] but little attention has been paid to other types of non-uniformities such as membrane scratches and foreign particles, which may also conceivably affect durability [6]. By implementing 4D in-situ X-ray computed tomography (XCT) [7,8], the current work aims to track the evolution of scratches that appear on a reinforced membrane surface during fabrication and its specific objective is to determine the impacts of membrane scratches on membrane durability in fuel cells.The study was conducted by using small-scale fuel cells with GORE-SELECT® membranes that were intentionally scratched with a razor blade, subjecting them to combined chemomechanical membrane accelerated stress test (AST), and monitoring the membrane degradation and evolution of the scratches using 4D-XCT throughout the AST. During the fabrication step, the depth of scratches was regulated by a weak bond between the reinforcement layer and the perfluorosulfonic acid (PFSA) layer, i.e., the scratches did not tear through the reinforcement. Furthermore, the scratches did not adversely impact the initial cell performance. However, during AST operation the evolution of the scratched region was affected by several factors, including the friction between the layers of the membrane electrode assembly, the width of the scratch (Figure 1), the presence of membrane debris, and the extent of membrane strain. Additionally, it was observed that changes in the quality of catalyst layer transfer onto the scratched region can alter the degradation pattern and potentially create a self-mitigating mechanism. These findings may be used to develop more optimized quality control measures for membrane scratches in fuel cell production. Acknowledgements This research was supported by the Natural Sciences and Engineering Research Council of Canada, Canada Foundation for Innovation, British Columbia Knowledge Development Fund, Western Economic Diversification Canada, Ballard Power Systems, and W.L. Gore & Associates. This research was undertaken, in part, thanks to funding from the Canada Research Chairs program. Keywords: fuel cell; membrane durability; X-ray computed tomography; membrane scratch; manufacturing References [1] Cullen DA, Neyerlin KC, Ahluwalia RK, Mukundan R, More KL, Borup RL, et al. New roads and challenges for fuel cells in heavy-duty transportation. Nat Energy 2021;6:462–74. https://doi.org/10.1038/s41560-021-00775-z.[2] Whiston MM, Azevedo IL, Litster S, Whitefoot KS, Samaras C, Whitacre JF. Expert assessments of the cost and expected future performance of proton exchange membrane fuel cells for vehicles. Proc Natl Acad Sci U S A 2019;116:4899–904.[3] De Bruijn FA, Dam VAT, Janssen GJM. Review: Durability and degradation issues of PEM fuel cell components. Fuel Cells 2008;8:3–22.[4] Tavassoli A, Lim C, Kolodziej J, Lauritzen M, Knights S, Wang GG, et al. Effect of catalyst layer defects on local membrane degradation in polymer electrolyte fuel cells. J Power Sources 2016;322:17–25.[5] Lü W, Liu Z, Wang C, Mao Z, Zhang M. The effects of pinholes on proton exchange membrane fuel cell performance. Int J Energy Res 2011;35:24–30.[6] Kundu S, Fowler MW, Simon LC, Grot S. Morphological features (defects) in fuel cell membrane electrode assemblies. J Power Sources 2006;157:650–6.[7] Ramani D, Singh Y, White RT, Wegener M, Orfino FP, Dutta M, et al. 4D in situ visualization of mechanical degradation evolution in reinforced fuel cell membranes. Int J Hydrogen Energy 2020;45:10089–103.[8] White RT, Eberhardt SH, Singh Y, Haddow T, Dutta M, Orfino FP, et al. Four-dimensional joint visualization of electrode degradation and liquid water distribution inside operating polymer electrolyte fuel cells. Sci Rep 2019;9:1–12. Figure 1

(Invited) Understanding Mg-Related Defects for Vertical GaN p-n Junction Structures Via p-Type Ion Implantation

Vertical GaN power devices have emerged to become promising candidates for next-generation high power applications due to superior material properties such as high breakdown voltage, low on-resistance, and high mobility compared to devices based on Si and SiC. GaN-based p-n junction switching devices enable higher voltage power with significantly higher efficiencies with added advantages of systems with reduced size and weight. A technological limitation of GaN, however, has been the inability to achieve high p-type doping in a planar, vertical device. Here, we will focus on recent developments to achieve high p-type efficiency though ion implantation, novel high temperature annealing schemes, and the importance of defects and morphology in native substrates and epitaxial layers.Mg-implanted homoepitaxial GaN annealed at temperatures at or above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects in the form of inversion domains contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N2 overpressure), which results in a low dopant activation efficiency. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at multiple dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop size and density is observed after annealing at the higher temperatures and longer times. Earlier work addressing electrical measurements of these types of samples showed that annealing at ~1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements the earlier work by identifying the microscopic defects (inversion domains) which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperature (1400 °C) annealing cycles to activate Mg in GaN.

Small Scale Models of Solar Tracking Systems

Increasing the efficiency of photovoltaic panels using solar tracking systems is a current topic. The use of solar tracking systems is a solution, especially in low power applications. The paper presents two types of solar tracking systems, one based on astronomical data, and the other based on tracking the point of maximum illumination. Both systems are made on small scale for educational purposes. These systems can be used for the analysis of methods, principles and particularities in order to use them in practical applications. For the two experimental models of solar tracking made, the hardware and software structure are presented. To orient the photovoltaic panels in the two directions (East-West, respectively South-North) DC motors or stepper motors are used. One motor is used for each axis of rotation. Both structures have the control part composed of a microcontroller development system. This control method has the advantage that can significantly reduce the number of electronic components as well as the cost of designing and building of equipment. For the solar tracking system based on astronomical data, a remote monitoring and control system has been achieved. It uses a friendly graphic interface made on PC with the help of Visual Basic software. Both models were tested and the experimental results showed correct operation according to the imposed protocol. Finally, an energy efficiency analysis was done and it was found that the PV panel that uses the tracking systems produces 35% more energy compared to a fixed PV panel.

(Digital Presentation) Study of Structural and Ionic Conductivity Property in Gd3+ and Sm3+ Co-Doped Ceria for Low Temperature SOFC Electrolyte Application

In recent years, fuel cells have become one of the most efficient and clean energy conversion devices. Due to their use in stationary as well as mobile power applications, they have also gained a lot of attention in this field. From all other fuel cells, SOFC has several advantages such as absence of liquid component, vibration free working, fuel and many more. However, two most crucial aspects of SOFC are operating temperature and the choice of electrolyte materials. It is the most efficient fuel cell with a setback in its elevated operating temperature, as high as around 800℃ -1000℃. To achieve high ionic conductivity in a SOFC, it is very important to tailor the electrolyte properties, simultaneously reducing the operating temperature.Conventionally, Yttria Stabilized Zirconia (YSZ) has been the most studied electrolyte material with a limiting factor of its high operating temperature. Doped Ceria has been one of the most explored alternatives of YSZ, which not only reduces the operating temperature but also enhances the ionic efficiency due to its electro-catalytic property. The double valency property of CeO2 occurring due to oxygen non-stoichiometry (CeO2-δ), generates oxygen vacancies making it a potential electrolyte material. Rare Earth (RE) dopants like Gd3+ and Sm3+ have reported to have high ionic conductivity at low temperatures. In the present study, synthesis of Sm-Gd- co-doped CeO2 by wet chemical route to ensure homogenous distribution, with the stoichiometry Ce1-a Gda-y Smy O2-0.5δ where a=0.20 and 0≤y≤a. It was prepared by modified co-precipitation method wherein, no additional water has been utilized during the co-precipitation process in order to minimize the particle agglomeration. Phase pure particles were obtained by calcining the precipitants at 650℃ in air and the green body made from it were sintered in air at elevated temperature of 1450 °C to achieve high density pellet. XRD and Raman spectroscopy confirmed successful substitution of both dopants and presence of single-phase cubic structure of the nanoparticles. The surface morphology was studied using FESEM which showed highly dense structure with more than 97% density. The electrochemical impedance spectroscopy (EIS) of the sintered pellets in the temperature range of 400-700℃, showed much higher conductivity then singly doped Ceria . Figure 1

Performance and Durability of Next Generation Automotive Membrane Electrode Assemblies in Automotive Short Stacks

The space for polymer electrolyte membrane fuel cell (PEMFC) systems for the application especially in small cars is a limiting factor. Hence, high power density at high current density is required to fulfill the power demand and space requirements of a fuel cell system when installed into a car. Additionally, the fuel cell operation at elevated temperature supports this requirement facilitating smaller cooling systems. Hence, within the EU funded project GAIA (next Generation AutomotIve membrane electrode Assemblies), a consortium of leading OEMs, industrial partners and academic/research partners/organizations/institutions aimed to develop well beyond state of the art membrane electrode assemblies (MEAs) for high power application at elevated operating temperature.Therefore, electrocatalysts, membranes, ionomers, gas diffusion and microporous layers were developed with respect to minimizing the resistances by improving their interfaces. The potential of the developed next generation MEAs was determined using automotive short stacks aiming a beginning of life power density of 1.8 W/cm2 at 0.6 V. The durability target was defined with less than 10 % voltage loss of the beginning of life performance after 6000 operating hours (extrapolated from a testing time of 1000 h). For verification of the durability, an automotive drive cycle was adapted from real life driving data and applied for durability determination. This drive cycle contained very challenging operating conditions such as e.g., an applied current density up to 3 A/cm2 and an increased operating temperature of 105 °C at the stack outlet.In this study, the project achievements in performance and durability at high power and high temperature operation of the developed next generation automotive MEAs were demonstrated within automotive short stacks. During the projects progression, the application of a newly developed gas diffusion layer with increased degree of graphitization and a microporous layer with large pore structure significantly increased the performance at high current density. The stability of the catalyst coated membrane (CCM) was drastically increased by a membrane with a PBI-X reinforcement developed within the project, which replaced a standard PTFE reinforcement. Additionally, a new ionomer with increased high temperature stability was implemented that inhibited ionomer migration at high temperatures. The addition of a radical scavenger to the catalyst layer inhibited the destruction of the CCM by radicals as observed at high temperature operation with the state-of-the-art material. Finally, besides the improvement of the MEA material properties, the fuel cell operating parameters were optimized in-situ using an automated optimization algorithm to find the optimum operation parameters for the newly designed MEA. This optimization demonstrated a significant contribution to the achievement of the performance and durability target as it allowed the operation of the developed MEA at its “sweet spot”.

(Invited) FALP (Fast Atomic Layer Processing) a Chamber for Combined PEALD and ALE Processes

Atomic Layer Etching and (PE) Atomic Layer deposition are processes that are needed for the advanced nm silicon processing technologies.Also, for high power application with GaAs, GaN this type of application getting more and more important. Even for optical applications extremely high quality and thick films are of interest.Our new Tool FALP combines low temperature (20°C-120°) PEALD and ALE InSitu with high thruput and good electrical quality.The Tool can handle even heavy optical 17” substrates (20mm thick 8kg heavy) and is able to deal with 8”,6”,4” small wafer sizes. For 300mm we will have a version for 300mm with ESC. This ESC is developed by Plasway-Technologies.We will present first proven PEALD results on 17” for optical applications.On our Pre-Development (joint work with Fraunhofer IKTS) we will present the results of ALE etching for Si, Ga, GaN, SiO2, AL2O3 and TiO2 with different chemistries.We will also present first electrical results to prove the dielectric quality of the films (SiO2 and Al2O3) .We will show also first InSitu integrated ALE and PEALD processed wafers.

(Invited) Stacking High Mobility Channels

Beyond 3 nm node, the transistor architecture of stacked channel gate-all-around (GAA) FETs can replace FinFETs for advanced technology node due to the improvement of power, performance, and area by the enhanced short channel control, design flexibility, and drive current per footprint. High ION and small parasitic RC are the keys to extend nanosheet technologies for N+1 and N+2 nodes. To extend nanosheets to next nodes, we have demonstrated additional enabling knobs such as high mobility channels, high-k gate dielectrics, and highly stacked channels to effectively increase the ION for high performance. Beyond stacked nanosheets, new transistor architectures such as TreeFET (a combination of FinFET and stacked nanosheets) and CFET (3D stacked n and p FETs) can further enable cell height scaling. CFETs and atomic channels have potentials to be used in A5 and A2 nodes according to the transistor roadmap by IMEC [1], respectively. Note that ultrathin body as thin as 1 nm can be considered as atomic channels for nearly ideal SS and high ION/IOFF for low power application.First of all, high mobility channel material is the key factor to improve performance CV/I. As a result, Ge/GeSi and GeSn are the target high mobility channels for nFETs and pFETs, respectively. For nFETs, Ge is an attractive option for high mobility channel to boost the ION thanks to its higher electron mobility than Si [2]. For pFETs, strained GeSn has higher hole mobility than Ge to improve the ION for pFETs due to the hole effective mass reduction under compressive strain [3]. For a fixed footprint, the vertically highly stacked GAA channels can provide large ION to achieve high performance and area scaling for advanced technology node.In addition to high mobility channel, the performance of GAAFET can be improved by scaling down gate oxide thickness. However, the gate leakage problem increases with scaling down the gate oxide thickness. As a result, high-k materials were proposed as gate oxide for gate leakage reduction and performance enhancement in GAAFETs. Plasma-enhanced atomic layer deposition (PEALD) HfxZryO2 was reported to achieve high-k value by optimizing the Hf and Zr content [4], respectively. In this work, a high k value of 47 is achieved in Hf0.2Zr0.8O2 alloy. Furthermore, the high-k gate dielectrics is integrated into stacked GAAFETs successfully.However, the challenge of Ge-based channel is the large IOFF due to the small bandgap [5-7]. Ultrathin body device can effectively reduce the IOFF, but the mobility degradation is observed as the channel thickness decreases below 5nm due to surface roughness scattering. Moreover, the high mobility GeSn can afford some mobility loss due to the ultrathin body [8]. Furthermore, the ION can be further improved by channel stacking with the suppression of IOFF by the ultrathin body.For Si nanosheets, the mismatch between hole mobility and electron mobility in nanosheets [9] might lead to potential design challenges of CMOS. As a result, the TreeFET transistor architecture combining with FinFETs and stacked nanosheets is proposed [10] and experimentally demonstrated [11] as a candidate beyond nanosheets. TreeFETs with {100} surfaces can enhance the electron mobility of Si, while {110} sidewalls are beneficial to hole mobility for both Si and Ge. TreeFETs with additional fin interbridges (IB) between nanosheets can increase Weff and enhance ION per footprint for high-performance devices beyond FinFETs and stacked nanosheets.3D transistor stacking can enable further cell height scaling and extend Moore's law scaling. The pFET and nFET are able to fold on each other to reduce 50% of inverter cell area ideally in CFET [12, 13], as a promising transistor architecture beyond stacked nanosheets. As compared to the sequential 3D process, no wafer bonding or layer transfer is required in the monolithic 3D process. Moreover, monolithic 3D by epitaxy can reduce the FEOL cost and the parasitic RC as compared to sequential 3D. The high mobility channel material of GeSi is used for CFET demonstration in this work [14]. Heavily doped sacrificial layers are beneficial for S/D resistance reduction by thermal annealing during the device fabrication. Reportedly, dielectric layers in S/D regions are used for the electrical isolation between n/p FETs in CFET structure [15], but the complicated S/D recess and dual S/D selective epi regrowth are required. In this work, a simple process without S/D selective epi regrowth can achieve self-aligned CFETs with multiple P/N junction isolation to effectively reduce the leakage current. Acknowledgements- This work is supported by National Science and Technology Council (111-2218-E-002-040-MBK, 111-2634-F-A49-008-, and 111-2622-8-002-001-), Ministry of Education (NTU-CC-112L890901), and Taiwan Semiconductor Research Institute (TSRI), Taiwan. Figure 1

Influence of Formation Temperature on Cycling Stability of Sodium-Ion Cells: A Case Study of Na3V2(PO4)2F3 | HC Cells

Sodium-ion batteries are cheaper and attractive alternatives to lithium-ion batteries, particularly for low energy applications.1 Moreover, the Na+ cation, with its larger ionic radius and lower charge density than Li+, exhibits a weaker interaction within the ionic framework of electrode materials, as well as in solution, resulting in the higher power-rate capability of sodium materials. Hence, sodium-ion batteries based on Na3V2(PO4)2F3 (NVPF) | hard carbon (HC) and Prussian blue analogs (PBA) I HC chemistries are primarily promoted for their high power applications (nearly 80% charging of the cell within 10min). Of particular interest is the NVPF|HC system, due to its high energy density (~120 Wh/kg achieved in 18650 cell level) and high structural stability of NVPF material for long cycling.Our studies, together with others published in recent years, show that the electrode-electrolyte interphase (EEI) formed in the Na-ion cell is not stable as it partly dissolves during rest or discharge periods, and re-forms when recharging the cell.2 This dissolution and reformation cycle can lead to poor cycling stability and an increase in EEI thickness. A thicker EEI results in a higher impedance, which decreases the performance of the cell at high charge/discharge rates. Thus, different strategies have been explored to modify the EEI properties and enhance its stability, mainly focused on the incorporation of SEI-forming additives like vinylene carbonate or fluoroethylene carbonate.3 These additives could eventually stabilize the interphase but with the cost of increasing the interfacial impedance, hence affecting the power rate capability of the Na-ion cells, as mentioned before. Thus, different strategies are needed that allow for the formation of a stable interphase displaying high ionic conductivity (less resistance).Here, we show that it is possible to achieve a stable, ionically conducting interphase modulating the temperature during formation cycles. First, we demonstrated that the nature and chemical composition of the interphase changes as a function of the temperature applied during the formation cycles. The temperature of the cell is expected to play a role in the dissolution or precipitation of different chemical components, which helps us to tune the formation protocol, producing a stable and conducting interphase with or without electrolyte additives. The cells subjected to the optimized formation protocol exhibit low impedance, high power rate capability and long cycling stability. The results presented in this study benefit in great measure the future commercialization of NVPF|HC cells, but also are expected to be of value for other sodium cells based on HC anodes, by providing a framework to optimize the EEI formation and characteristics. References Tarascon, J.-M. Na-ion versus Li-ion Batteries: Complementarity Rather than Competitiveness. Joule 4, 1616–1620 (2020).Ma, L. A., Mogensen, R., Naylor, A. J. & Younesi, R. Solid Electrolyte Interphase in Na-ion batteries. in Na-ion Batteries 243–264 (John Wiley & Sons, Ltd, 2021). doi:10.1002/9781119818069.ch6.Eshetu, G. G. et al. Electrolyte Additives for Room-Temperature, Sodium-Based, Rechargeable Batteries. Chem. – Asian J. 13, 2770–2780 (2018).

(Invited) Benchmarking of Beyond the State-of-the-Art Vertical GaN Devices

In this paper theoretical benchmarking of semi-vertical and vertical gallium nitride (GaN) MOSFETs with rated voltage of 1.2 kV to 3.3 kV is performed against corresponding silicon carbide (SiC) devices. Specific design features and technology requirements for realization of high voltage vertical GaN MOSFETs are discussed and implemented in simulated structures. The main findings are that a) specific on-resistance of vertical GaN devices is expected to be 75% and 40% of that for 1.2 kV and 3.3 kV SiC MOSFETs, respectively, b) semi-vertical GaN do not offer any advantage over SiC MOSFETs for medium and high voltage devices (>1.0 kV), and c) vertical GaN has largest potential advantage for high and ultra-high voltage devices (>2.0 kV).Gallium nitride (GaN) devices experience an explosive and rapid development with new device providers entering the market at an impressive speed. However, the devices are HEMT (High Electron Mobility Transistor) type lateral devices utilizing the two-dimensional electron gas (2DEG) properties of the GaN/AlGaN interface. The required GaN layers in the devices are grown epitaxially on hetero substrates like Si, SiC, sapphire and poly-AlN using buffer layers to control the strain caused by lattice mismatch which prevents the vertical current flow. For power applications the lateral current flow close to the surface leads to thermal limitations and complicates thermal management in packaging. Furthermore, it leads to large footprint of the devices for large currents. The devices also lack the robust avalanche breakdown characteristics. At present the HEMT power devices are limited to operational voltages of less than 650V with some first devices from VisIC and iGaNPower demonstrating 1200V capability. For these reasons there is an interest in the development of vertical GaN devices opening the possibilities of small footprint and thus lower cost due to smaller chip sizes, high power densities and robust avalanche breakdown characteristics with large avalanche energy capability [1]. The development of vertical devices has been hindered by the lack of large area freestanding GaN substrates facilitating homoepitaxial growth of drift layers. An alternative are semi-vertical structures grown on Si which are the subject of this study along with true vertical structures on GaN. In addition to the material issues there are technological issues that require further attention like dopant compensation and activation and Mg implantation technology for junction termination. This paper focuses on prospective benchmarking of semi-vertical and vertical GaN MOSFETs against SiC devices. A beyond the state-of-the-art benchmarking, in wide voltage range, is missing in the literature. Most of the benchmarking publications report results of experimental structures based on state-of-the-art technology and simple junction termination [2], [3], [4].The main objective of the work has been to design competitive semi-vertical and vertical GaN structures and perform benchmarking against SiC devices in the voltage range 1.2 kV to 3.3 kV. The structures have been characterized by calculating the output, transfer and voltage blocking characteristics using default Sentaurus models. In the next step, the structures have been modified based on the experience and know-how from SiC devices. The electric field crowding occurring at the trench gate corners must be mitigated both with respect to the breakdown voltage in the bulk material and the reliability of the gate dielectric [5]. Efficient junction termination (JT) is also necessary for both types of structures. This is especially important in the semi-vertical structures where junction termination is an integral part of each device segment and has a significant impact on the resulting on-state resistance. The structure design was optimized by reducing the cell pitch and introducing a multi-cell-per-device-segment design in semi-vertical structures to improve the on-resistance. Removal of the performance limitations in the structures based on the state-of-the-art GaN technology and device cell optimization was done to make benchmarking with more mature SiC devices based on the prediction of what may become feasible beyond the state-of-the-art.1. Matteo Meneghini et al., Journal of Applied Physics, vol. 130, p. 181101, 2021.2. Oka, T. Ina, Y. Ueno and J. Nishii, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), pp. 303-306, 2021.3. A. Khadar, C. Liu, R. Soleimanzadeh and E. Matioli, IEEE Electron Device Letters, vol. 40, no. 3, pp. 443-446, 2019.4. Wei He et al., Nanoscale Research Letters, 17:14, 2022.5. Nakamura et al., 2011 International Electron Devices Meeting, pp. 26.5.1-26.5.3, 2011.

Analysis of Operational Characteristics of AlGaN/GaN MIS-HEMT with Different Slant-Recessed-Gate Structures

Purpose of WorkRecessed-gate metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) have emerged as a promising technology for normally-off operation because of their ability to withstand high gate voltage sweeps while maintaining low levels of leakage current [1, 2]. Despite their excellent performance, the etch to leave nanometer-thin layers of AlGaN has proven to be a significant challenge due to difficulties in precisely controlling the etching process. Achieving a positive threshold voltage (Vth) while maintaining the high electron mobility characteristic of the two-dimensional electron gas (2DEG) requires atom-level etch control. Additionally, conventional dry etching techniques can potentially cause damage, presenting a second challenge [3]. However, atomic layer etching (ALE) offers a promising solution with its potential for low damage, uniformity, and high-resolution depth control [4]. In this work, we not only focus on the ALE process to leave nanometer-thin layers of AlGaN/GaN as recessed-gate structures but also analyze the breakdown voltage characteristics of the slant-recessed gate structure.ApproachNormally-off AlGaN/GaN MIS-HEMT with a recessed gate structure was fabricated on a 6-inch commercial Si substrate by MOCVD. The process involved mesa isolation by ICP-RIE, followed by the formation of the ohmic contact (Ti/Al/Ni/Au) at 825 °C annealing for source and drain metals, and the AlGaN/GaN recessed gate structure using ALE technology by O2/BCl3 multiple cycles of oxidation and etching [5]. After the recessed-gate process, the native oxide and carbon residue were removed by a wet cleaning process and O2 plasma treatment, and then the atom layer deposition (ALD) of about 12 nm thickness Al2O3 high-dielectric layer was also deposited. The backend process included gate field plate, SiNx passivation, and contact opening. Finally, the Ni/Au metal stack was deposited as pad electrodes, as shown in Fig. 1. The specific characteristics of the fabricated recessed MIS-HEMT were Lg of 3 μm, Lgs of 5 μm, Lgd of 10 μm, and Wg of 100 μm.Results and SignificanceIn Figure 2(a) and (b), TEM profiles of the recessed gate structure were presented. Following the ALE process for the recessed gate structure, the remaining thickness of AlGaN was approximately 5.1 nm and 5.6 nm for Slant A and Slant B, respectively. Although the thickness of AlGaN remaining was similar in both cases, the slant angle of the recessed gate structure differed, significantly. Specifically, Slant A had a 65-degree recessed gate structure, while Slant B had a 45-degree recessed gate structure. In order to analyze of operational characteristics of AlGaN/GaN MIS-HEMT with different slant-recessed gate structures (Slant A and Slant B), the three-terminal OFF-state breakdown voltage (BV) was measured, as shown in Fig. 3. Recessed gate MIS-HEMT feature design of Lg/Lgd/Lgd/Wg of 3/5/10/100 μm, and VG of -10 V was used as this BV measured condition. The Slant B structure demonstrated higher breakdown voltage (BV) performance compared to the Slant A structure. Specifically, the Slant B structure exhibited a BV of 470 V at 1 μA/mm and 750 V at 1 mA/mm, while the Slant A structure had a BV of only 70 V at 1 μA/mm and 140 V at 1 mA/mm. The reason for the superior BV performance of the Slant B structure (45-degree recessed gate structure) was attributed to the gradient of the AlGaN profile, which facilitates the thin film deposition process of materials such as Al2O3 and gate metal (Ni/Au). Additionally, the Slant B structure helps to reduce the high electric field effect between the gate and drain, further contributing to its improved BV performance.[1] Y. S. Lin, Y. W. Lain, and S. S. H. Hsu, "AlGaN/GaN HEMTs With Low Leakage Current and High On/Off Current Ratio," IEEE Electron Device Letters, vol. 31, no. 2, pp. 102-104, 2010.[2] Z. Tang et al., "600-V Normally Off SiNx/AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse," IEEE Electron Device Letters, vol. 34, no. 11, pp. 1373-1375, 2013.[3] T. H. Hung, P. S. Park, S. Krishnamoorthy, D. N. Nath, and S. Rajan, "Interface Charge Engineering for Enhancement-Mode GaN MISHEMTs," IEEE Electron Device Letters, vol. 35, no. 3, pp. 312-314, 2014.[4] T. Y. Yang et al., "A Normally-Off GaN MIS-HEMT Fabricated Using Atomic Layer Etching to Improve Device Performance Uniformity for High Power Applications," IEEE Electron Device Letters, vol. 43, no. 10, pp. 1629-1632, 2022.[5] I.-H. Hwang, H.-Y. Cha, and K.-S. Seo, "Low-Damage and Self-Limiting (Al)GaN Etching Process through Atomic Layer Etching Using O2 and BCl3 Plasma," Coatings, vol. 11, no. 3, p. 268, 2021. Figure 1

Efficient High Temperature PEMFC Metallic Stack

High temperature (HT) polymer electrolyte membrane fuel cells (PEMFCs) are highly beneficial for high power applications [1-3]. They can be used both in stationary, as well as portable power devices [1,4,5] combining the advantages of the PEM type cells (flexibility in dynamic operation, compactness) and high temperature operation (elimination of fuel humidification and carbon monoxide clean up).This work focuses on the development, construction and testing of an efficient all-metallic HT-PEMFC stack with a power output of 1 kWe [6]. The selection of the proper polymer electrolytes allowed the operation of the stack within the range of 160-190oC. The Membrane-Electrode-Assemblies (MEA) and all components of the stack were designed and prepared in-house. The fuel cell stack characteristics and performance are affected by many parameters such as the materials, components’ design and proper assembly of the stack, as well as the operating conditions.The stack accomplished 50% electrical efficiency with power output of 1070 W and a power density of about 0.18 W/cm2 at 180°C under pure H2 feed. The same performance was reached with reformate hydrogen feeds. The 1 kW electrical and 1 kW thermal power HT-PEMFC stack presented herein consists of thirty MEAs, metallic bipolar plates and an innovative cost-efficient internal pumpless two-phase equilibrium water-steam cooling. The effective design and construction of the latter secures temperature gradientless and isothermal operation of the stack and the production of high temperature superheated steam, which is an effective carrier of high-quality thermal energy with several commercial and industrial applications. Acknowledgments Funding from Region of Western Greece and European Regional Development Fund (RIS3) through DemoCHP DЕР7-0019758 and the Operational Program “Competitiveness, Entrepreneurship & Innovation” (EPAnEK), NSRF 2014-2020 through Solar2HyP Τ2ΕΔΚ-01877.

Utilising Fourier Transform Voltammetry to Advance the Enzyme Electrochemistry Toolkit

Electron transfer and redox chemistry drives life and Biology can provide inspiration for the design of sustainable fuel catalysts that achieve highly active and selective small molecule transformations. In particular, the Parkin group are interested in hydrogenases,1 biological H2-producing enzymes, and lytic polysaccharide monooxygenases (LPMOs),2, 3 enzymes that breakdown cellulose. We seek to understand how the rate and energetics of electron transfer controls catalysis in such enzymes;4 to do this we collaborate with the Gavaghan and Bond groups to develop more powerful bioelectrochemical methodologies.5 This talk will describe our most recent efforts to integrate sinusoidal voltammetry into our enzyme-electrochemistry toolkit.6, 7 The technique offers advantages in terms of simulation speed, which in turn enables the powerful application of Bayesian statistical analysis to visualise the uncertainty in the modelling approach. However, we still rely on large amplitude Fourier transform voltammetry and direct current methodologies to visualise the Faradaic current and readily define redox reaction parameter bounds.

Analysis of Thermal Performance of Various Battery Packs and Materials Used in Electric Vehicles: A Review

Electric powered vehicle popularity gives us better option for reducing the hydrocarbon emissions for the clean environment and will help to minimizing the troposphere of ozone degradation. Evs that are powered by batteries are becoming more commonplace worldwide. A strong Battery Management System (BMS) is essential for the reliable and safe operation of batteries, which have been widely used in many large power applications, including EVs and hybrid EVs. Their optimal plan and the management are significant for safe and beneficial tasks. This review paper examined with about the oldest kind of battery-latest powered battery (Pb-acid battery) and the most recent innovation of battery, lithium-ion battery. The present paper deals about the recent improvement in three important areas like Battery pack shape, different battery material and thermal behaviour which covered main challenges for EVs operation.

A novel energy storage system for efficiency improvement of fuel cell electric vehicles based on a new high step-up DC-DC converter

Proton exchange membrane fuel cell systems have relatively low efficiency in low power applications and have many uncertainties. In this regard, the design of a high-efficiency battery charger for fuel cell electric vehicles has been an important issue for researchers and has attracted a lot of attention in recent years. For this purpose, in this article, in the first step, with the aim of developing a battery charger with high efficiency and low cost, a new high step-up DC-DC converter with unique features is proposed. The main advantages of the proposed converter are continuous input current, high efficiency, low voltage stress on components, less component count, and high voltage gain. To prove the advantages of the proposed converter, a peer-to-peer comparison with some existing converters has been made and results are presented. In addition, this study comprehensively presents the different operating modes for the proposed converter and provides the necessary analysis and relationships for circuit operation. In the second step, this study explains the small signal modelling for the proposed converter as well as the maximum power point tracking controller for this system. In order to validate the proposed system, the values of theoretical calculations, simulation results, as well as the experimental results of the 48V-input/220V-output prototype device are presented and the results are compared side by side.

Simulation study of multi-source hetero-junction TFET-based capacitor less 1T DRAM for low power applications

A capacitorless one-transistor dynamic random access memory (1T DRAM) based on multi-source hetero-junction tunnel field-effect transistor (TFET) is presented in this work. The analysis of the three memory functions: Write, Hold and Read of 1T DRAM has been carried out using Synopsys TCAD simulations. A storage region of Ge material is used for the accumulation of holes/to store the charge carriers. The variation in length of Ge-storage region, under lap length (Lunder), and temperature is performed to analyse the DRAM performance. In the Write operation, the tunneling window reduces to 15 nm and holes can be easily stored in the Ge-storage region. In case of Hold1 and Read1 operations, the potential barriers are reduced by 0.24 eV, and 0.1 eV respectively. In the proposed multi-source TFET with 14 nm gate length, read current ratio i.e. IR1/IR0 of 4.4, retention time (RT) greater than 10 sec, and sense margin (SM) of 1.27 × 10−6 A/µm is achieved at room temperature. The proposed multi-source TFET based 1T DRAM is operating at very low gate voltages. Therefore, this device is well suited for low power applications.

Electrical characteristics assessment and noise analysis of pocket-doped multi source T-shaped gate tunnel FET

A detailed analysis of a novel multi-source T-shaped gate Tunnel FET (MS-TTFET) is presented in this study in order to address the main issues with conventional TFETs. Due to its exceptionally low off-state current (IOFF) and remarkable sub-threshold properties, the tunnel field effect transistor has received a great deal of interest for low standby power applications. The MSR's integration into the SOI platform increases the device's on current, which increases the effective tunnelling area in the middle of the source-channel junctions. An isolator oxide has been added to prevent the source and drain regions from being directly coupled. A SiGe pocket has been suggested at the source and channel junction; silicon-germanium, a low bandgap material which enhances the tunnelling of charge carriers. A T-shaped gate can increase the effectiveness of the tunnel junction in order to limit the lower value of the leakage current. The multi-source regions of the T-shaped gate tunnel field effect transistor can boost the on-state current (ION) by improving tunnel junction areas. The device's ION/IOFF ratio, which is 1013 for our suggested construction, is the standard measure of merit for any device. It is possible to achieve an increased ON current of the order of 10−5 A/μm with a negligible subthreshold swing (SS) of 42 mV/decade. Moreover, the effect of low frequency flicker noise on the device behavior has been investigated.

Development of Rotary Solar Receiver and Solar Simulator Facility for Concentrated Solar Power Applications

A prototype rotary solar receiver and a solar simulator facility have been designed, built and commissioned by Odqa Renewable Energy Technologies in conjunction with The Oxford Thermofluids Institute, University of Oxford for the validation of concentrated solar power technologies. The key features of the rotary solar thermal receiver include the rotating absorber surface which incorporates a high temperature heat transfer design. The innovative design also includes a compact solar power inlet aperture for very high incident heat flux to reduce the radiant heat loss from the high temperature surface. Air is used as the heat transfer fluid as this has system integration advantages over other types of heat transfer media, such as CO2, steam, molten salt, or solid particles. A 30kWe Xenon-arc lamp high heat flux incident light has also been developed to enable experimental validation of the solar receiver technologies. The Xenon-arc lamp array consists of three lamps combined with a custom designed, 5-degree-of-freedom focusing mechanism to achieve precise focus and maximise the heat flux. The receiver has successfully produced working fluid temperatures reaching 1200°C, demonstrating the concept viability for high temperature processes.