(Invited) FALP (Fast Atomic Layer Processing) a Chamber for Combined PEALD and ALE Processes

Abstract

Atomic Layer Etching and (PE) Atomic Layer deposition are processes that are needed for the advanced nm silicon processing technologies.Also, for high power application with GaAs, GaN this type of application getting more and more important. Even for optical applications extremely high quality and thick films are of interest.Our new Tool FALP combines low temperature (20°C-120°) PEALD and ALE InSitu with high thruput and good electrical quality.The Tool can handle even heavy optical 17” substrates (20mm thick 8kg heavy) and is able to deal with 8”,6”,4” small wafer sizes. For 300mm we will have a version for 300mm with ESC. This ESC is developed by Plasway-Technologies.We will present first proven PEALD results on 17” for optical applications.On our Pre-Development (joint work with Fraunhofer IKTS) we will present the results of ALE etching for Si, Ga, GaN, SiO2, AL2O3 and TiO2 with different chemistries.We will also present first electrical results to prove the dielectric quality of the films (SiO2 and Al2O3) .We will show also first InSitu integrated ALE and PEALD processed wafers.