(Invited) Atomic Layer Processing of MoS2

Abstract

Molybdenum disulfide (MoS2) is one of several transition metal dichalcogenides consisting of a layer of transition atoms sandwiched between layers of chalcogens. Interest in MoS2 has been driven by its 1.8 eV direct electronic band gap in monolayer form and its moderate electron mobility (10-100 cm2/Vs) even when only three atoms (~6.5 Å) thick. These properties offer potential for retaining or improving speed and efficiency in scaled electronic devices.Advancing MoS2 and other 2D materials into high volume manufacturing of semiconductor devices requires scalable deposition and etching processes. The process of atomic layer deposition (ALD) has been used to deposit 2D materials and can deposit films at lower temperatures for back-end-of-line (BEOL) compatibility. However, ALD relies on covalent surface reactions. When these reactions occur at high density during film nucleation, the resulting film is typically amorphous or nanocrystalline and requires thermal annealing to form a more well-ordered layered crystal structure. A key challenge is to establish a low temperature ALD process that achieves a layered crystal structure with low defectivity. In terms of material removal, MoS2 films have been etched by plasma-based atomic layer etching (ALE). ALE is analogous to ALD except that cyclic surface reactions promote volatility and lead to film removal rather than deposition. Together, atomic layer deposition and atomic layer etching constitute complementary facets of atomic layer processing and enable new pathways for nanomanufacturing.Here, we describe our recent progress in thermal ALD and thermal ALE of MoS2 films. For ALD of MoS2, we use cycles of MoF6 and H2S between 150-350 °C. Nucleation on metal oxide surfaces shows a strong temperature dependence, which is attributed in part due to the temperature dependence of surface hydroxyl groups. Density functional theory (DFT) calculations support the role of hydroxyls in promoting nucleation and reveal that MoF6 dissociates on the surface rather than participating in a ligand exchange reaction. The dissociation reaction leads to the formation of a metal fluoride interface between the oxide surface and the MoS2 film. Surface species following MoF6 include MoOF4 and MoO3, both of which convert to MoS2 during the H2S pulse, which releases H2O and HF byproducts. Films deposited at 200 °C and below are amorphous but convert to a layered structure upon annealing in H2S. Deposition at 250 °C yields films with a layered crystal structure without post-deposition annealing.Thermal ALE of MoS2 films deposited by ALD can be achieved using alternating exposures of MoF6 and H2O. It was found that MoS2 films are fluorinated by the MoF6 and then oxygenated by H2O. Volatile byproducts are MoF2O2, H2S, and HF, which are primarily released during the H2O half-cycle. Thermal ALE of MoS2 is temperature dependent and follows Arrhenius behavior. At 200 °C, the mass loss per cycle is 6 ng/cm2 (~0.5 Å/cycle) and reaches 271 ng/cm2 at 300 °C. Etch stop behavior was observed once the etched film approached the metal fluoride interface of the growth surface. Layered MoS2 deposited by ALD with post-deposition annealing exhibited layer-by-layer etching at 0.2 Å/cycle at 250 °C.The ALD results provide key insights into the nucleation and growth of MoS2 films using low temperature ALD. Further work is required to control basal plane orientation but achieving crystalline films well within BEOL thermal budgets is promising. The results from the ALE study provide insights into the etching reactions for MoS2. Combining the two processes offers greater control over MoS2 films. Using ALD followed by ALE and post-deposition annealing, we achieved few-layer MoS2 films. These combined thermal processes represent a pathway for integration of MoS2 films into device manufacturing.