Photoresist Research Articles

One-Dimensional van der Waals Heterojunction Comprising Carbon Nanotube Half-Wrapped in Boron Nitride Nanotube: Deep Investigation of Thermal Rectification.

One-dimensional van der Waals (vdWs) heterostructures are celebrated for their exceptional thermal management capabilities, garnering significant research interest. Consequently, our research focused on the one-dimensional vdWs heterojunction comprising carbon nanotube half-wrapped in boron nitride nanotube (BNCNT), specifically their thermal rectification (TR) properties. We employed non-equilibrium molecular dynamics to explore the TR mechanism and assess the impacts of temperature, strain, and coupling strength on heat flux and TR ratio. Our findings reveal that the backward heat flux demonstrates greater atomic vibration instability, as indicated by mean square displacement (MSD), compared to forward heat flux. This instability leads to a higher concentration of localized phonons, thereby diminishing the backward heat flux and enhancing TR. Additionally, we utilized MSD to shed light on the negative differential thermal resistance phenomenon and the influence of stress on forward and backward heat fluxes. Remarkably, TR ratios reached 344% at 3% strain and 400% at -1% strain. Calculations of phonon density of states revealed a competitive mechanism between in-plane and out-of-plane phonons coupling in the inner carbon nanotube and an overlap degree of out-of-plane phonon spectra between the inner carbon nanotube and outer boron nitride nanotube. This accounts for the differing trends in forward and backward heat fluxes as coupling strength χ increases, with TR ratios exceeding 1000% at χ = 7.5. This study provides vital insights for advancing one-dimensional vdWs thermal rectifiers.

Enhancing chloride ion permeability resistance of recycled aggregate concrete through internal curing with glazed hollow beads

This study explores the effects of glazed hollow beads (GHB) dosage and additional water amount on the capillary negative pressure, mechanical properties, initial resistivity, and electric flux in conditions where recycled aggregate concrete (RAC) is subject to cracking. The chloride ion (Cl-) diffusion coefficient for RAC cured internally was evaluated using the resistivity method, which also looked at the relationship between the diffusion coefficient, GHB dosage, and additional water amount. This analysis advances our understanding of the functional mechanisms of pre-soaked GHB in RAC. The research reveals that incorporating pre-soaked GHB enhances RAC in two primary ways. Firstly, pre-soaked GHB acts as an internal curing agent that stimulates the formation of hydration products, thereby filling internal voids and mitigating micro-crack development. Secondly, it functions as an adsorbent. The differential in relative humidity and internal pressure between the unsaturated GHB and the cement stone matrix promotes the sequestration of corrosive agents in cracked RAC. Additionally, an internal curing impact factor has been introduced, forming the basis of a new model to calculate the Cl- diffusion coefficient that accounts for both GHB dosage and additional water intake. The established quantitative relationships between resistivity, electric flux, and Cl- diffusion coefficient in GHB-treated RAC (GHB-RAC) provide a methodological framework for quickly evaluating the durability of GHB-RAC against Cl- intrusion in practical engineering contexts.

Minigap-induced negative differential resistance in multilayer MoS2 -based tunnel junctions

Despite extensive research, the high-energy band properties of transition metal dichalcogenides remain unexplored. Here, we reveal that a multilayer MoS2-based tunnel junction exhibits substantial negative differential resistance (NDR) owing to the presence of a minigap, which is the energy gap between the upper and lower bands of the valence band at the Γ point. We fabricated a highly p-doped multilayer p+−MoS2/h-BN/p+−MoS2 tunnel junction. When a bias is applied across the junction, holes at the Fermi level at the Γ point in the valence band of the source-side p+−MoS2 resonantly tunnel to the drain-side p+−MoS2 with momentum conservation. When the energy of the injected hole coincides with the minigap of the drain-side p+−MoS2, the tunneling conductance is suppressed; thus, NDR is observed in the current-voltage characteristics. We identified minigap-induced NDR over a broad range of MoS2 thicknesses, including the bulk, that was observable even at room temperature. Published by the American Physical Society 2024

Elastic cross section data for precursor molecules used in low-temperature plasmas: Sn(CH3)4 and Ga(CH3)3

Tetramethyltin [Sn(CH3)4] and trimethylgallium [Ga(CH3)3] are important source molecules of Sn and Ga atoms which are used in manufacturing techniques involving low-temperature plasmas. Accurate numerical modeling of plasma environments requires a comprehensive set of electron scattering cross sections by these precursor molecules. Here, we report the elastic integral, differential, and momentum transfer cross sections for electron collisions with Sn(CH3)4 and Ga(CH3)3 for energies ranging from 0 to 30 eV. Our calculations were carried out with the Schwinger multichannel method implemented with pseudopotentials and considered two levels of approximation in our calculations, namely static-exchange and static-exchange plus polarization. We identified three shape resonances for Sn(CH3)4 and one clear low-lying resonance for Ga(CH3)3. The low-energy behavior of the s-wave cross section and eigenphase was investigated and, for both molecules, we found evidence of a Ramsauer–Townsend (RT) minimum and a virtual state. Our results indicate that negative differential conductivity would occur in a gas composed of Sn(CH3)4. On the other hand, this effect would be suppressed in a gas of Ga(CH3)3 due to an overlap between the position of the RT minimum and the shape resonance in the momentum-transfer cross section.

Spin-polarization and Coulomb interaction dependent thermal rectification in a quantum dot system

Based on the master equation approach, we investigate the thermal transport through a diode composed of a quantum dot under Coulomb interaction and tunnel-coupled to two ferromagnetic leads with antiparallel spin polarizations. We analyze the effects of spin polarizations, Coulomb interaction, mean temperature and Zeeman splitting on the thermal rectification. Firstly, we find that the thermal rectification effect is enhanced with the increase of spin polarization, because the mirror-symmetry of the system is broken by the anti-parallel spin polarization. Especially, when both leads are fully spin polarized, the asymmetry of the heat transferred by Coulomb interaction under the opposite temperature bias leads to the appearance of perfect thermal rectification and negative differential thermal conductance. Secondly, we find whether the system is in a Coulomb blockade state greatly affects the thermal rectification coefficient. As the average temperature increases or the intradot Coulomb interaction decreases, the system gradually escapes from the Coulomb blockade state, resulting in a reversal of the thermal rectification direction and ultimately leading to an increase in the rectification coefficient. Thirdly, we also find that the Zeeman splitting can be utilized to modulate the behavior of thermal rectification. Thermal rectification occurs only when Zeeman splitting and spin polarization coexist, and under different spin polarizations, the rectification coefficient exhibits different trends with the change of Zeeman splitting. These observations indicate that this structure holds potential application at a thermal rectifier as well as a thermal detector of magnetic fields.

Optimization of Grayscale Lithography for the Fabrication of Flat Diffractive Infrared Lenses on Silicon Wafers.

Grayscale lithography (GSL) is an alternative approach to the standard binary lithography in MEMS fabrication, enabling the fabrication of complicated, arbitrary 3D structures on a wafer without the need for multiple masks and exposure steps. Despite its advantages, GSL's effectiveness is highly dependent on controlled lab conditions, equipment consistency, and finely tuned photoresist (PR) exposure and etching processes. This works presents a thorough investigation of the challenges of GSL for silicon (Si) wafers and presents a detailed approach on how to minimize fabrication inaccuracies, aiming to replicate the intended design as closely as possible. Utilizing a maskless laser writer, all aspects of the GSL are analyzed, from photoresist exposure parameters to Si etching conditions. A practical application of GSL is demonstrated in the fabrication of 4-μm-deep f#/1 Si Fresnel lenses for long-wave infrared (LWIR) imaging (8-12 μm). The surface topography of a Fresnel lens is a good case to apply GSL, as it has varying shapes and size features that need to be preserved. The final fabricated lens profiles show a good match with the initial design, and demonstrate successful etching of coarse and fine features, and demonstrative images taken with an LWIR camera.

Experimental and numerical investigation on flexural behavior of steel-UHPC composite slabs with PBL shear connectors

A full-scale flexural test was conducted to investigate the flexural and cracking behavior of Steel-UHPC Composite Slabs (SUCS) with PBL (Perfobond rib) shear connectors, with a focus on analyzing the impact of the tensile reinforcement ratio on flexural performance. During the test, the flexural performance of SUCS was assessed through measurements of strain, mid-span deflection, relative slip, crack width, and crack morphology. A section analysis was performed to predict the flexural and cracking behaviors of SUCS, which was further verified by experimental results. The results show that the PBL shear key effectively ensures the overall force of steel plate and UHPC plate, resulting in good ductility of SUCS under negative bending moment. As tensile reinforcement ratio increased from 0.89 % to 1.69 %, the cracking load remained stable while the yield load and ultimate load demonstrated significant improvements of 54 % and 57 %, respectively. The cross-section analysis indicated that with the increment in tensile reinforcement ratio, the contribution of tensile reinforcement to flexural capacity increased, whereas the contribution of UHPC to tensile capacity notably decreased. The equivalent uniform stress reduction coefficient of the UHPC's tensile zone, determined through simplified negative flexural bearing capacity, was calculated to be 0.87. The failure mode of negative flexural resistance differs significantly from positive flexural resistance, as it involves the breaking of the tensile steel bar.

Негативний диференціальний опір і спектральні характеристики вихідних та опромінених електронами (з Е = 2 МеВ) світлодіодів GaAs1-xPx

The electrophysical and radiation characteristics of the original and irradiated electrons with E = 2 MeV GaAsP light emitting diodes were studied. The results of measurements of current-current characteristics in the range of 77 - 300 K are given. In the range of 180 - 77 K, a region of negative differential resistance was detected. The main characteristic parameters of light emitting diodes radiation are determined. The consequences of the effect of radiation defects on the emissivity and quantum yield of the studied structures are discussed.

Властивості вихідних та опромінених фосфідо-галієвих світлодіодів

Spectral features of the original and irradiated with electrons with E = 2 MeV GaP light emitting diodes (LEDs) were studied. Recombination lines of the exciton bound on the N isoelectronic center and on the pair complexes NN1 were detected. The change in the spectral composition of radiation when passing through a section of negative differential resistance is analyzed. Dose dependences of luminescence intensity were obtained for green GaP(N) and red GaP(Zn-O) LEDs. The maximum critical radiation dose was established, after which the LEDs lost their characteristic exciton emission mechanism. The results of the annealing of irradiated LEDs are given.

Effect of the Pyrolysis Temperature on the Negative Differential Resistance in Carbon/Vanadium Nanocomposite

Effect of the Pyrolysis Temperature on the Negative Differential Resistance in Carbon/Vanadium Nanocomposite

H/O edge passivated B/N co-doped armchair graphene nanoribbon field-effect transistors, based on first principles

This study employs the nonequilibrium Green’s function method in conjunction with density functional theory to fabricate and analyze a Graphene Nanoribbon Field-Effect Transistor (GNRFET). The co-doping of B and N creates built-in electric fields, thereby reducing leakage current. The results demonstrate effective control performance of planar gates, as evidenced by an increase in IDS with rising gate voltage. Furthermore, a negative differential conductance phenomenon is observed at bias voltages exceeding 0.7 V, exhibiting correlation with transmission spectra and energy band structures. To precisely illustrate the electron distribution within the doped scattering region, calculations involving transport paths, the molecular projection self-consistent Hamiltonian (MPSH), and the emission eigenvalues and eigenstates of the device are conducted. This research provides a reference for exploring and developing smaller and more energy-efficient AGNR field effect transistor designs and implementations. The principal objective of this paper is to investigate the potential applications of these smaller, more energy-efficient devices.

Switching Behavior and Negative Differential Resistance in a Carbon Matrix Based on Resorcinol-Formaldehyde

Switching Behavior and Negative Differential Resistance in a Carbon Matrix Based on Resorcinol-Formaldehyde

Current-perpendicular-to-plane transport properties of 2D ferromagnetic material CrTe2

Abstract In recent years, heterostructures of van der Waals (vdW) ferromagnetic materials have become a focal point in the study of low-dimensional spintronic devices. The current direction in spin valves is commonly perpendicular to the plane (CPP). However, the transport properties of the CPP mode remain largely unexplored. In this work, current-in-plane (CIP) mode and CPP mode for CrTe2 thin films have been carefully studied. The temperature-dependent longitudinal resistance transitions from metallic (CIP) to semiconductor behavior (CPP), with the electrical resistivity of CPP increased by five orders of magnitude. More importantly, the transport properties of the CPP can be categorized into a single-gap Tunneling Through model with the activation energy (E a) of ~1.34 meV/gap at 300-150 K, Variable Range Hopping (VRH) model with a linear Negative Magnetic Resistance (NMR) at 150 -20 K, and weak localization (WL) region with a nonlinear MR at below 20 K. This study explores the vertical transport in CrTe2 materials for the first time, contributing to understand its unique properties and pave the way for its potential in spin valve devices.

Pitch conversion by photoresist expansion transfer for micro LED

AbstractMicro LED is an extremely small‐sized LED where each individual LED operates independently, providing high brightness, excellent contrast ratio, wide color gamut, and other outstanding visual characteristics. We have developed the transfer technology for micro LED chips using our proprietary PR (photoresist) expansion technique. This exclusive PR expansion technology, leveraging semiconductor photo processes, enables pitch conversion between micro LED chips and maintains a high level of accuracy in chip transfer at a sub‐micron scale. This innovative transfer technology allows for high‐density integration of micro LED chips, effectively reducing the cost per chip, and serving as a key driver for rapid growth in the micro LED market.

Collaboration or competition? Interactions between floating and fixed-bottom offshore wind in Norway

Fixed-bottom offshore wind is exploited as a maturing technology in many European countries. Floating wind has impressive potential for deep waters but needs technological and market development. How these two partially related technologies interact remains unclear. We address the ambiguity of these interactions to investigate floating offshore wind's development. The interactions are divided into technological or market and can be negative (competition and resistance) or positive (collaboration and diversification). We analyze these interaction types through a case study of offshore wind in Norway. Many positive interactions were observed, including knowledge overlaps and infrastructure compatibilities. Negative interactions include competition about future space constraints at ports, labor availability, and resistance by incumbent wind turbine manufacturers. Further, market and technological interactions are mutually influential, creating important feedback loops. Technologies can no longer be simply categorized as ‘niche’ or ‘regime’, but rather ‘niche-like’ (emerging) and ‘regime-like’ (maturing); hence, both emerging-emerging and emerging-maturing interactions occur.

Negative Differential Resistance in Single‐Molecule Junctions Based on Heteroepitaxial Spherical Au/Pt Nanogap Electrodes

AbstractSingle‐molecule junctions exploit the internal structure of molecular orbitals to construct a new class of functional quantum devices. The demonstration of negative differential resistance (NDR) in single‐molecule junctions is direct evidence of quantum mechanical tunneling through a molecular orbital. Here, a pronounced NDR effect is reported with a peak‐to‐valley ratio of 30.1 on a single‐molecule junction of π‐conjugated quinoidal‐fused oligosilole derivatives, Si2 × 2, embedded between the unique electroless gold‐plated heteroepitaxial spherical Au/Pt nanogap electrodes. This NDR feature persists in a consecutive endurance test of 180 current traces. the thermally stable NDR effects in the Si2 × 2 single‐molecule junctions between 9 and 300 K are demonstrated. The density functional theory calculations under electric fields indicate that the NDR effect can be ascribed to the bias‐dependent resonant tunneling transport via the polarized HOMO, which has asymmetrically changed electrode coupling with increased bias voltages. The results confirm a promising electrical platform for constructing functional quantum devices at the single‐molecule level.

Effects of Current Filaments on IGBT Avalanche Robustness: A Simulation Study

With the increase in voltage level and current capacity of the insulated gate bipolar transistor (IGBT), the avalanche effect has become an important factor limiting the safe operating area (SOA) of the device. The hole injection into the p/n junction on the backside of the IGBT after avalanche is the main feature that distinguishes the avalanche effect from other devices. In this paper, the avalanche breakdown characteristics of IGBT and the nature of current filament are investigated using theoretical analysis and numerical simulation, and the underlying physical mechanism controlling the nature of current filaments is revealed. The results show that the hole injection on the backside of the IGBT leads to an additional negative differential resistance (NDR) branch on the avalanche breakdown curve. The device’s common-base current gain, αpnp, is a crucial factor in determining the current filament. As αpnp increases, the avalanche-induced current filament becomes stronger and slower, resulting in weaker avalanche robustness of the device.

Impedance analysis of voltage prediction compensation scheme for DC-link oscillation suppression in cascade drive system

The dc-link voltage oscillation caused by the negative impedance characteristic of the constant power load is a significant issue in the series LC branch-permanent magnet synchronous motor (PMSM) cascade system. To this end, this paper proposes a voltage prediction compensation (VPC) strategy to suppress the dc-link voltage oscillation by adding a voltage stability constraint term to the finite control set model predictive current control (FCS-MPCC). First, the linearized q-axis reference voltage is obtained by taking the derivation of the cost function of the VPC, thereby deriving the input impedance of the inverter-permanent magnet motor system. Then, the impedance matching criterion and Nyquist stability criterion are used to theoretically prove that the proposed strategy can effectively improve system stability, and the robustness of the proposed method to changes in motor parameters is analyzed. Finally, experimental verification was conducted on a 1 kW motor platform. The results show that when the motor is running under rated working conditions, after adding the stability constraint, the dc-link voltage fluctuation drops from 40 V to 7 V; the q-axis current pulsation rate also drops to 3.8 %. Theoretical analysis and experimental results show that the VPC strategy can effectively suppress the dc-link voltage oscillation of the cascade drive system.

A method to design a fast chaotic oscillator using CCTA

This article introduces a novel method for designing a fast chaotic oscillator using a CCTA (Current Conveyor Transconductance Amplifier) based on Chua's circuit. The proposed method uses innovative configurations and advanced simulation techniques to overcome challenges in high-speed operation, nonlinear dynamics, and Analog Building Block (ABB) selection. The design begins with nonlinear negative resistance, essential for Chua's diode characteristics, including two negative resistances, NR1 and NR2. The circuit integrates one CCTA block, two grounded capacitors, two fixed resistors, one inductor, and one potentiometer. It is simulated using PSPICE with IC (Integrated Circuit) macro-models and 180nm CMOS (Complementary Metal Oxide Semiconductor) technology. Various chaotic waveforms and attractors are produced, validating the theoretical and mathematical predictions. By varying the resistance values (1450Ω, 1650Ω, 1800Ω, 1950Ω), the circuit exhibits different chaotic behaviors, such as large limit cycles, double-scroll attractors, Rossler-type attractors, and I-periodic attractors. FFT (Fast Fourier Transform) analysis confirms the highest dominant operating frequency of 37.5MHz. A Monte Carlo simulation with 100 runs shows maximum voltage variations in the chaotic waveforms of 5.21 % and 4.61 % across the capacitors, demonstrating robustness and reliability. This design offers significant advancements in implementing high-frequency chaotic oscillators, with potential applications in various fields requiring chaotic signal generation.•A novel design of Chua's diode and Chua's chaotic oscillator using only one CCTA block is presented in this paper.•The proposed chaotic oscillator achieves the highest operating frequency of 37.5MHz.•The proposed circuit is simulated using commercially available ICs (MAX435 and AD844) and CMOS 180nm technology in PSPICE to confirm its workability.

Electronic and transport properties of U-cut edge patterned AGNR superlattice for RTD application

In this paper, we first characterize a superlattice structure created by repeating a heterostructure formed from two armchair graphene nanoribbon (AGNR) segments with different widths. We investigate the electronic and transport properties of this structure by varying its widths and lengths to demonstrate the tunability of its overall band gap. The plot of the local density of states shows the formation of localized states at the low band gap segments of the superlattice. The superlattice is then used as a barrier to create a double barrier quantum well (DBQW) to design a proposed resonant tunneling diode (RTD) structure. We observe this device's negative differential resistance (NDR) operation for a range of bias voltages between the contacts. We study the effect of dimensional parameters on the RTD performance. The non-equilibrium Green's function method, based on a tight-binding model, is employed for numerical computation.