Abstract
The electrophysical and radiation characteristics of the original and irradiated electrons with E = 2 MeV GaAsP light emitting diodes were studied. The results of measurements of current-current characteristics in the range of 77 - 300 K are given. In the range of 180 - 77 K, a region of negative differential resistance was detected. The main characteristic parameters of light emitting diodes radiation are determined. The consequences of the effect of radiation defects on the emissivity and quantum yield of the studied structures are discussed.
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