Abstract
Abstract In recent years, heterostructures of van der Waals (vdW) ferromagnetic materials have become a focal point in the study of low-dimensional spintronic devices. The current direction in spin valves is commonly perpendicular to the plane (CPP). However, the transport properties of the CPP mode remain largely unexplored. In this work, current-in-plane (CIP) mode and CPP mode for CrTe2 thin films have been carefully studied. The temperature-dependent longitudinal resistance transitions from metallic (CIP) to semiconductor behavior (CPP), with the electrical resistivity of CPP increased by five orders of magnitude. More importantly, the transport properties of the CPP can be categorized into a single-gap Tunneling Through model with the activation energy (E a) of ~1.34 meV/gap at 300-150 K, Variable Range Hopping (VRH) model with a linear Negative Magnetic Resistance (NMR) at 150 -20 K, and weak localization (WL) region with a nonlinear MR at below 20 K. This study explores the vertical transport in CrTe2 materials for the first time, contributing to understand its unique properties and pave the way for its potential in spin valve devices.
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