Abstract
Giant magneto-resistive random-access memories (GMRAMs) are magnetic nonvolatile random-access memories that use magnetic storage in magnetic multilayers to store data and the giant magneto-resistance (GMR) effect to read stored data. Pseudo-spin-valve (PSV) and spin-valve (SV) devices are patterned magnetic multilayers that exhibit the GMR effect in current-in-plane (CIP) structures. This article will focus on the operating principles of PSV and SV devices as CIP GMRAM elements.
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