Implementation Of Logic Gates Research Articles

Ratiometric temperature sensing and molecular logic AND gate execution via Eu3+ doped BaWO4 nanophosphor

Self-calibrated Luminescence thermometry (LT), a contactless temperature measurement technique has gained significant recognition owing to its idiosyncratic contours over conventional thermal sensors. Apart from high relative sensitivity, large operating thermal window, insignificant absolute error with minimum temperature uncertainty are perquisite requirements for feasible endeavor of the developed temperature sensors. In the current work, after efficaciously preparation of Eu3+ doped BaWO4 via hydrothermal route, the inherent thermally coupled energy levels (TCEL) 5D1 and 5D0 of Eu3+ were employed for ratiometric temperature sensor design in 80–500 K range. The intense down-shifting luminescence and high temperature sensitivity elicit small temperature uncertainty (0.05 K) and a low absolute error (−0.12 to 0.14 K). Nevertheless, along with good repeatability (>95%) in thermal cycles, the prepared nanophosphor also demonstrates good stability (after repeated thermal cycles). Additionally, carried out Judd-Ofelt analysis provides significant insight in LT based upon emission behavior of Eu3+. A high value of relative sensitivity (1.65% K−1 and 2.95% K−1 from decay kinetics and ratiometric respectively) with chromaticity shift of 78* 10−3 manifests a visual change in inherent red emission profile from the prepared phosphor. Further, exploiting heat and incident UV as input, the prepared phosphor material is utilized to develop an exclusive dry molecular logic gate (here AND) implementation. As versatile spectroscopic probe, Eu3+ ion was exercised for details structural analysis to disclose the change of local site symmetry in BaWO4 due to aliovalent substitution.

Fast multiqubit Rydberg geometric fan-out gates with optimal control technology

Practical quantum computation requires highly efficient implementation of quantum logic gates. The fan-out gate represents such a type of multiqubit controlled gate with one qubit controlling a number of target qubits. Recent efforts for fan-out gates using Rydberg atoms include adiabatic operations along with the dark-state dynamics of Rydberg states [M. Khazali and K. M\o{}lmer, Phys. Rev. X 10, 021054 (2020)] and implementation based on the asymmetric Rydberg-Rydberg interaction [J. T. Young et al., Phys. Rev. Lett. 127, 120501 (2021)]. Inspired by these advances, we propose a fast-operation scheme for geometric multiqubit fan-out gates, in which the target qubits can be executed with arbitrary operations based on the asymmetric Rydberg-Rydberg interaction and time-optimal control technology. One of the main favorable features of our scheme is its performance in a nonadiabatic way and with the time-optimal control technology, by which the shortest smooth geometric path is found. Another feature, that the target qubits could be executed with arbitrary geometric quantum operations, makes our scheme general and useful. Therefore, our scheme provides a promising alternative route toward scalable fault-tolerant quantum information processing based on Rydberg atoms.

Microfluidic Fredkin gate: A novel control unit for integrated microfluidic systems

The need for efficient miniaturized control elements in integrated microfluidic systems and lab-on-chip devices has always been a challenge. This paper proposes the first-of-its-kind microfluidic-based Fredkin gate that mimics the functionality of Fredkin-gate in electronics. This reversible microfluidic gate is versatile and can be used to implement all binary functions on its fluidic inputs. We demonstrate the design and fabrication of the microfluidic Fredkin-gate. The proposed gate is fabricated over the PDMS elastomer, using a network of microfluidic channels and pressure-driven membrane microvalves based on standard soft-lithography processes. Then, we study the gate's performance under different inlet flow rates and control pressures. A threshold pressure of 20 kPa is obtained for an inlet flow rate of 3 ml/min, which is in good agreement with the simulation outcomes. Finally, we demonstrate the implementation of the basic logic gates (AND, OR, NOT) using the fabricated Fredkin-gate. The proposed nondissipative microfluidic gate provides a simple design, implementation, and integration into Multilayer Soft Lithography (MSL) microfluidics. It can operate as a repeatable on-chip control unit to run serial or parallel logic functions in large-scale integrated microfluidic devices for complex manipulations of fluid flow.

A TCAD Simulation Study of Three-Independent-Gate Field-Effect Transistors at the 10-nm Node

Three-independent-gate FETs (TIGFETs) are Schottky-barrier-based devices, which can be reconfigured to be either n- or p-type allowing for innovative compact logic gate implementations. In this article, we present an aggressively scaled 10-nm gate-all-around silicon-germanium nanowire TIGFET device evaluated with Synopsys Sentaurus Poisson-based Technology Computer-Aided Design (TCAD) simulations at a 0.7-V nominal supply voltage as typically used at this technology node. The operation of the TIGFET device is described in detail, with particular care given to the majority current contributions for each operating mode. When considering a silicon-germanium channel, the maximum TCAD-simulated current drive is 880.20 and 806.58 μA/μm for n- and p-type operation, respectively, thus making TIGFET devices competitive with FinFET technology at the 10-nm node. These simulations are verified using device physics calculations. Further simulations of the carrier densities for each of the TIGFET-operating configurations are performed to confirm that the simulated device is operating as intended.

Highly Sensitive Implementation of Logic Gates with a Nonlinear Nanomechanical Resonator

We introduce a theoretical concept of logic gates for sequenced data that contain a large number of data bits to be computed using a nonlinear nanomechanical resonator. Resonantly driven nanomechanical modes display the bistability of forced vibrations. Near the cusp point on the bifurcation curve, even a small change in driving force can lead to switching between the vibrational states with significantly different amplitudes. This enables a highly sensitive implementation of logic gates, including and, or, and xor gates. The underlying principles are simple and generic, suggesting that our method is applicable not only to nanomechanical systems but also to a wide variety of bistable physical, chemical, and biological systems.

Algorithmic Approach of Electrically Doped Single-walled Cytosine Nanotube-based Biomolecular Logic Gate: A First Principle Paradigm

Biomolecular modeling and its associated analytical software simulation tools have a significant role in the rapid progress of bio-inspired semiconductor technologies. This paper presents the implementation of logic gates using molecular modeling of a cytosine-based single-walled nanotube. Density functional theory in and the nonequilibrium Green’s function-based first-principles approach are used to perform the quantum mechanical calculations for the electronic transmission within the nanotube. The gated cytosine single-walled nanotube shows high current-voltage response during room-temperature operation where the electrode voltage is kept at ± 0.02 V. This is a first attempt towards the circuit-level modeling of logic gates using a cytosine nanotube. The quantum transport phenomenon of this analytical model is investigated using an atomistic software simulation technique. The basic logic gates and XNOR gate are implemented with the study of the current-voltage characteristics. The maximum current observed during the simulation process is 52.6 μA. Moreover, the local device density at different energy levels proves the candidature of cytosine nanotubes as logic gates. The transmission spectrum analysis also confirms the high channel conductivity at the central scattering region of the nanotube.

Design and implementation of reversible logic gates using silicene-based p–n junction logic devices

Advancements in adiabatic quantum computing have enabled a rapid development in thermodynamically reversible logic circuits, which can reduce energy wastage to almost negligible levels. Various reversible logic gates using silicene-based multiplexer logic devices (SMLDs) are designed and demonstrated herein using Verilog-A, then validated by SPICE circuit simulations. The results confirm that the various reversible gates correctly implement the corresponding truth tables, thereby validating the use of SMLDs as building blocks for such gates. The SMLD-based reversible logic gate designs enable a reduction in hardware complexity by 76.92–80.64% compared with complementary metal–oxide–semiconductor (CMOS) technology and a 50% reduction in hardware compared with pass transistor logic-based designs, respectively.

Stellar Representation of Multipartite Antisymmetric States

Pure quantum spin-$s$ states can be represented by $2s$ points on the sphere, as shown by Majorana in 1932 --- the description has proven particularly useful in the study of rotational symmetries of the states, and a host of other properties, as the points rotate rigidly on the sphere when the state undergoes an $SU(2)$ transformation in Hilbert space. At the same time, the Wilzcek-Zee effect, which involves the cyclic evolution of a degenerate $k$-dimensional linear subspace of the Hilbert space, and the associated holonomy dictated by Schroedinger's equation, have been proposed as a fault-tolerant mechanism for the implementation of logical gates, with applications in quantum computing. We show, in this paper, how to characterize such subspaces by Majorana-like sets of points on the sphere, that also rotate rigidly under $SU(2)$ transformations --- the construction is actually valid for arbitrary totally antisymmetric $k$-partite qudit states.

Implementation of Noise-aided Logic Gates with Memristive Circuits

Implementation of Noise-aided Logic Gates with Memristive Circuits

ATP and lanthanide ions derived coordination polymer nanoparticles as a novel family of versatile materials: Color-tunable emission, artificial tongues and logic devices

A new strategy was put forward to fabricate amorphous coordination polymer nanoparticles (CPNs) self-assembled by lanthanide ions (Ln3+) and ATP whose adenine subunit and phosphate group served as bidentate ligands for Ln3+. These ATP/Ln3+ CPNs showed weak luminescence but could be sensitized by introduction of external stimuli. Hence, they could be “artificial tongues” to respond to multifarious analytes (pyridine carboxylic acids or metal ions). Inspired the fact that both ATP/Tb3+ and ATP/Eu3+ CPNs presented ultrasensitive responses to 2, 6-pyridinedicarboxylic acid, a tunable chromaticity of emission from red to green was achieved by simply varying the doping ratio of Tb3+ and Eu3+ into ATP. Moreover, the ATP/Ln3+ CPNs exhibited surprisingly encapsulation properties for guest dye, indicating the feature of self-adaptive assembly. These features above provided the possibility of performing logic operations. By employing these CPNs as logic operators, the implementation of Boolean logic gates (INH and AND) and integrative logic operation (INH-INH) connecting the elementary logic operations has been successfully achieved.

Fluorescence for biological logic gates.

Biological logic gates are smart probes able to respond to biological conditions in behaviors similar to computer logic gates, and they pose a promising challenge for modern medicine. Researchers are creating many kinds of smart nanostructures that can respond to various biological parameters such as pH, ion presence, and enzyme activity. Each of these conditions alone might be interesting in a biological sense, but their interactions are what define specific disease conditions. Researchers over the past few decades have developed a plethora of stimuli-responsive nanodevices, from activatable fluorescent probes to DNA origami nanomachines, many explicitly defining logic operations. Whereas many smart configurations have been explored, in this review we focus on logic operations actuated through fluorescent signals. We discuss the applicability of fluorescence as a means of logic gate implementation, and consider the use of both fluorescence intensity as well as fluorescence lifetime.

Implementation of Unbalanced Ternary Logic Gates with the Combination of Spintronic Memristor and CMOS

A memristor is a nanoscale electronic element that displays a threshold property, non-volatility, and variable conductivity. Its composite circuits are promising for the implementation of intelligence computation, especially for logic operations. In this paper, a flexible logic circuit composed of a spintronic memristor and complementary metal-oxide-semiconductor (CMOS) switches is proposed for the implementation of the basic unbalanced ternary logic gates, including the NAND, NOR, AND, and OR gates. Meanwhile, due to the participation of the memristor and CMOS, the proposed circuit has advantages in terms of non-volatility and load capacity. Furthermore, the input and output of the proposed logic are both constant voltages without signal degradation. All these three merits make the proposed circuit capable of realizing the cascaded logic functions. In order to demonstrate the validity and effectiveness of the entire work, series circuit simulations were carried out. The experimental results indicated that the proposed logic circuit has the potential to realize almost all basic ternary logic gates, and even some more complicated cascaded logic functions with a compact circuit construction, high efficiency, and good robustness.

Low power all optical switching and implementation of universal logic gates using micro-bubbles in semiconductor nanocrystal solutions

We describe optical switching in solutions of semiconductor nanocrystals illuminated by a 404 nm continuous wave laser source, driven by the formation of a micro-bubble of solvent vapor in the solution. Low boiling solvents such as hexane show an oscillatory modulation of transmitted light intensity (period ∼4 s) while solvents with intermediate boiling points such as toluene give a stable switching response. An on/off ratio of 83% is observed in the transmitted pump beam. Using this, a pump beam (404 nm, 80 mW continuous wave) was shown to reversibly switch the state of a probe laser (630 nm, 5 mW continuous wave). This switch thus serves as an optical analog of an electronic transistor and demonstrates the potential for all optical switching of low power light beams. Further, all optical universal logic gates, NAND and NOR, were also demonstrated using the micro-bubble switch.

An alternative method for implementation of frequency-encoded logic gates using a terahertz optical asymmetric demultiplexer (TOAD)

All-optical frequency-encoded AND, OR, and NOT logic gates are proposed and their performance simulated to confirm their feasibility. Terahertz optical asymmetric demultiplexer (TOAD)-based logic gates with a control pulse energy as low as 50 fJ are used, and real-time simulations of their input and output pulse patterns reveal a rate of 20 Gbps. Such logic gates could be used for future all-optical logic processors for optical computation and communication systems.

Monotype Organic Dual Threshold Voltage Using Different OTFT Geometries

It is well known that organic thin film transistor (OTFT) parameters can be shifted depending on the geometry of the device. In this work, we present two different transistor geometries, interdigitated and Corbino, which provide differences in the key parameters of devices such as threshold voltage (VT), although they share the same materials and fabrication procedure. Furthermore, it is proven that Corbino geometries are good candidates for saturation-mode current driven devices, as they provide higher ION/IOFF ratios. By taking advantage of these differences, circuit design can be improved and the proposed geometries are, therefore, particularly suited for the implementation of logic gates. The results demonstrate a high gain and low hysteresis organic monotype inverter circuit with full swing voltage at the output.

One‐Transistor Memory Compatible with Si‐Based Technology with Multilevel Applications

AbstractA more compact integrated‐circuit (IC) design is proposed to solve the difficulties experienced when conventional scale‐down methods for IC approache the physical limits of the device. Memory is a key component in ICs, particularly in artificial intelligence (AI) circuits. However, current cutting‐edge designs are not suitable for mass production. Here, a one‐transistor memory with additional electrode(s) directly connected to the channel is proposed as a memory and artificial synaptic device, meaning it can also be used to implement logic gates. The memory proves to be suitable for multilevel memory applications, and had a high current on/off state contrast (above 109). Its programming time is comparable to dynamic random‐access memory (DRAM). The charge‐trapping memory mechanisms used by the device are proposed to be based on channel–control gate junction charge injection. By using one transistor to replace DRAM, which has one transistor and one capacitor, this new memory has a smaller area and can be fabricated more simply. Thisfacile design can be easily adapted into the foundry as an IC logic gate, memory, or artificial synaptic devices for numerous healthcare applications.

Photophysical properties of 1-pyridine-3-phenylpyrazoloquinoline and molecular logic gate implementation

The work demonstrates the photophysical properties of 1-(2-pyridyl)-3-phenyl-pyrazolo[3,4-b]quinoline with the focus on the effect of pyridyl substituent on excited-state deactivation of the pyrazoloquinoline core, and on the molecular logic gate implementation. The deactivation mechanism of the singlet excited state was investigated by means of UV-vis absorption, steady-state and time-resolved fluorescence spectroscopy as well as nanosecond laser flash photolysis. The maximum of absorption (emission) in nonpolar cyclohexane is located at 385 nm (421 nm) and only slightly depends on solvent polarity. The compound exhibits a moderate fluorescence (up to 42%) and a low-temperature phosphorescence (77 K). The studies reveal that the pyridyl group modifies the deactivation mechanism by triggering efficient intersystem crossing. Moreover, the effect of various chemical species: proton, electron-donating amine, and dihydrogenphosphate anion on the absorption and emission of the investigated dye was evaluated. The interpretation of the fluorescence behaviour in the presence or absence of the chemical inputs leads to the realization of unimolecular logic circuits that are able to perform advanced arithmetic operations, such as subtraction (XOR/INH) or IMP/INH logic circuit. The experimental results were supported by quantum-chemical calculations.

Plasticity of the truth table of low-leakage genetic logic gates

The design and implementation of genetic logic gates is a fundamental component of biological computation. In this article we show that the function of a common class of synthetic genetic AND and NAND gates is not completely dictated by the circuit connectivity, even if promoter leakage is very small. Rather, the logic function is strongly determined by a simple power law relationship between the promoter leakage rate and the binding affinity of the protein complex carrying the information from the input to the output of the gate. Depending on the value of the power law exponent, a circuit designed to be an AND gate can actually operate as a TRUE, OR, AND, or FALSE gate, even if the leakage rate is practically negligible. Surprisingly, all these functionalities are compatible with the physiological range of parameter values showing that the design of genetic logic gates which preserve functionality across cell types and conditions requires careful consideration of both circuit connectivity and parameter values.

Dual‐Gate Field Effect Transistors: Planar Dual‐Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates (Adv. Electron. Mater. 12/2018)

Proper control of the voltage applied at both gates of a planar dual-gate field effect transistor (FET) using a cellulose matrix as the dielectric makes it possible to operate them either in depletion or enhancement mode. In article number 1800423, Luís Pereira, Elvira Fortunato, Rodrigo Martins, and co-workers demonstrate the implementation of universal logic gates (NAND and NOR) using only one transistor, by setting the appropriate combination of the voltage level applied at each gate.

Planar Dual‐Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates

AbstractElectronics on paper enable some specific applications out of conventional ones which require innovative approaches and concepts on the design of devices and systems. Within this context, this work demonstrates that a unique set of characteristics can be combined in planar dual‐gate oxide–based field effect transistors with a back floating electrode using paper simultaneously as substrate and dielectric. The working principle of these transistors relies on the formation of electric double layers at the semiconductor/paper and paper/back floating electrode interfaces (associated to ions displacement within the paper) that can be disturbed by a voltage applied at a secondary gate, by the back floating potential or by the combination of both. This feature allows for the control of the on‐voltage of the transistors, from depletion to enhancement mode, for instance. Moreover, this specific characteristic allows the implementation of universal logic gates (NAND and NOR) using only one transistor, by setting the proper combination of the voltage level applied at each gate. This way a simple and universal device architecture can be envisaged towards the simplification of the production of low power electronic systems on paper.