Abstract
It is well known that organic thin film transistor (OTFT) parameters can be shifted depending on the geometry of the device. In this work, we present two different transistor geometries, interdigitated and Corbino, which provide differences in the key parameters of devices such as threshold voltage (VT), although they share the same materials and fabrication procedure. Furthermore, it is proven that Corbino geometries are good candidates for saturation-mode current driven devices, as they provide higher ION/IOFF ratios. By taking advantage of these differences, circuit design can be improved and the proposed geometries are, therefore, particularly suited for the implementation of logic gates. The results demonstrate a high gain and low hysteresis organic monotype inverter circuit with full swing voltage at the output.
Highlights
Organic thin film transistors (OTFTs), employing organic dielectric and semiconductor layers, show considerable competitive advantages over their inorganic counterparts, such as low cost, low temperature processing and light-weight [1,2]
The Corbino and interdigitated OTFTs employ top gate bottom contact (TGBC) architecture in which the fabrication process begins with the spin-coating of the planarizing layer of a proprietary acrylate polymer (PCAF, from CPI) on carrier glass followed by a soft-bake, a cross-linking process using UV light in a nitrogen environment, followed by hard-baking
The electrodes in interdigitated configuration were predominantly adapted over the development of OTFT to account for the low conductivity of organic semiconductors (OSC)
Summary
Organic thin film transistors (OTFTs), employing organic dielectric and semiconductor layers, show considerable competitive advantages over their inorganic counterparts, such as low cost, low temperature processing and light-weight [1,2]. Solution-processable materials are very attractive because they are compatible with spin-coating, drop casting and printing technologies at room temperature and under ambient conditions. This capability has practical advantages when coupled with photolithographic processes as a patterning techniques enable high-resolution, smaller process variations [3] and high-throughput [4]. The more widespread technology used to address the robustness of the organic circuits has been dual-VT using only p-type organic semiconductors (OSC). Two main routes have been considered: using chemical reactions at the dielectric/OSC interface or by modifying the OTFT geometry. For the former route, some examples include local chemical-doping
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