Abstract

A memristor is a nanoscale electronic element that displays a threshold property, non-volatility, and variable conductivity. Its composite circuits are promising for the implementation of intelligence computation, especially for logic operations. In this paper, a flexible logic circuit composed of a spintronic memristor and complementary metal-oxide-semiconductor (CMOS) switches is proposed for the implementation of the basic unbalanced ternary logic gates, including the NAND, NOR, AND, and OR gates. Meanwhile, due to the participation of the memristor and CMOS, the proposed circuit has advantages in terms of non-volatility and load capacity. Furthermore, the input and output of the proposed logic are both constant voltages without signal degradation. All these three merits make the proposed circuit capable of realizing the cascaded logic functions. In order to demonstrate the validity and effectiveness of the entire work, series circuit simulations were carried out. The experimental results indicated that the proposed logic circuit has the potential to realize almost all basic ternary logic gates, and even some more complicated cascaded logic functions with a compact circuit construction, high efficiency, and good robustness.

Highlights

  • Over the past years, Moore’s law seems to have stagnated as the demand for electronic devices to be scaled down has become increasingly difficult to be met [1]

  • The desire for new materials/mechanism-based devices that are compatible with the traditional complementary metal-oxide-semiconductor (CMOS) is realistic and attractive

  • This study further investigated the memristor-based unbalanced ternary logic implementation, and the main contributions can be summarized as below:

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Summary

Introduction

Moore’s law seems to have stagnated as the demand for electronic devices to be scaled down has become increasingly difficult to be met [1]. As a passive nanoscale component, a memristor possesses many superior properties, including the nonvolatility, high density, continuous input/output property, threshold property, and variable conductivity [4,5,6] All these above-mentioned advantages make the memristive device a powerful candidate in intelligent computation [7,8,9,10], with logic operation as an example [10]. A flexible memristor-CMOS-based logic circuit was designed, which could perform the different ternary logic gates (i.e., the NAND, NOR, AND, and OR gates) by changing the polarities of the interconnected memristors.

Spintronic Memristor
Implementation of Ternary Logic Gates
Memristor-CMOS Hybrid Circuit
NAND Gate
1: Initialization
Other Ternary Logic Gates
H VH V Mid
Comparison and Analysis
Experimental Environment
Parameter Selection
Case Study 1
Case Study 2
5.5.Conclusions
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