Pulsed Direct Current Magnetron Sputtering Research Articles

Analysis of pulsed direct current reactive magnetron sputtering on a silicon target

Reactive sputtering is a very useful technique, particularly, for producing inhomogeneous interference filters, where the refractive index changes smoothly during deposition. In such a context, precise control of deposition parameters is crucial for replicating the desired optical properties. This study employed a pulsed DC power source to investigate the influence of a duty cycle on target poisoning, sputtering plasma characteristics, electric signals, and optical and morphological properties of synthesized films. Reactive pulsed DC magnetron sputtering was characterized by analyzing the behavior of plasma emission via optical emission spectroscopy and voltage-current signals, while modulating parameters such as the oxygen content within the vacuum chamber. A set of thin films was coated on glass substrates under different system conditions. These films underwent characterization employing spectroscopic ellipsometry to ascertain their optical constants, atomic force microscopy for surface morphology analysis, and x-ray diffraction for the determination of crystalline structures. The results indicate that longer duty cycles required higher oxygen levels to poison the target. Additionally, a detailed analysis of electrical signals revealed nonsquare waveforms, whose characteristics were influenced by both the duty cycle and the oxygen content within the sputtering chamber, resulting in higher effective voltages during the on-time of the voltage pulse. Grown films via reactive pulsed DC magnetron sputtering were also compared to films grown via conventional DC magnetron sputtering at equivalent conditions of target poisoning.

SERS detection of dopamine in artificial cerebrospinal fluid and in Parkinson’s disease-induced mouse cortex using a hybrid ZnO@Ag nanostructured platform

Rapid, direct, and sensitive detection of metabolites or clinically relevant biomarkers in complex biological samples is still challenging. We report a label-free surface-enhanced Raman scattering (SERS)-based approach for highly sensitive detection of dopamine (DA) in artificial cerebrospinal fluid (aCSF) and mouse brain tissue samples. The hybrid SERS-active sensing platform was designed to maximize the hot spot distribution. It encompasses a network of flexible and polymeric nanotrenches and nanogaps fabricated by nanoimprint lithography (NIL) covered by thin films of zinc oxide (ZnO) and silver (Ag) deposited using pulsed laser deposition (PLD) and direct current magnetron sputtering (DC-MS), respectively. The growth of the ZnO and Ag thin films was assessed by scanning electron microscopy (SEM) technique. The proposed SERS substrate benefits from the interlayered semiconductor–metal contribution in SERS enhancement, leading to a versatile sensing platform with improved detection sensitivity through the increased hot spots distribution. Using this strategy, the proposed assay can achieve an ultralow DA determination at the nM level, a short testing time (<30 min), and high signal reproducibility (RSD 11 %). We also assessed the sensing attributes of our in house developed SERS platform to detect DA in spiked aCSF samples, and a limit of detection (LOD) of 10 μM was achieved. Additionally, after in vivo inducing Parkinson’s disease (PD) in mice, relevant biological samples (striatum and cortical brain tissue) were investigated by SERS and ELISA. Given its good stability and accuracy in complex samples, the SERS-ELISA analysis has great potential to be a powerful tool for the reliable detection of DA in remote conditions.

Investigating the growth behavior of titanium dioxide film prepared with direct current pulsed–magnetron sputtering technology

The direct current pulsed magnetron sputtering technology is employed to deposit TiO2 film onto the glass and Si(100) substrates. After annealing treatment, TiO2 film displays anatase (001) preferential orientation. The growth behavior of deposited and annealed TiO2 films is investigated. The results show that in the original stage, TiO2 film growth behavior is in Volmer–Weber mode, which is dominated by the diffusion effect. Considering the rivalry between TiO2 crystal nuclei, both crystallographic orientation and diffusion effects jointly dominate the film growth behavior in the rest stage. More importantly, the annealing treatment resulted in the coalescence of TiO2 crystal nuclei, as well as the growth of TiO2 crystal nuclei. Most importantly, after coalescence and growth of TiO2 nuclei, the anatase [001] crystal orientation of TiO2 grains remains the same as the normal direction of TiO2 film. Finally, after annealing treatment, TiO2 films comprise anatase (001) preferential orientation.

The Influence of Bias Voltage on the Structure and Properties of TiZrNbMo Coating Deposited by Magnetron Sputtering

TiZrNbMo coatings have been deposited using the direct current pulsed magnetron sputtering method in an argon atmosphere. The synthesis processes have been conducted under various process parameters. The structure (chemical and phase composition) and mechanical properties of the obtained multicomponent coatings are investigated as a function of plasma modulation frequency (10 Hz and 1000 Hz) and substrate bias (0 to −150 V). It is the case that an increase in the substrate bias decreases the deposition rate and alters the coating’s chemical composition. The latter leads to a Ti concentration decrease and a simultaneous increase in Mo and Nb concentrations in the final coating material. X-ray diffraction measurements indicate a single-phase BCC structure, with grain size decreasing as substrate bias increases. This ultimately forms an amorphous–nanocrystalline structure at −150 V. The mechanical properties of the multicomponent TiZrNbMo coatings have been determined using the nanoindentation method. The maximum values of hardness (13.45 GPa) and elastic modulus (188.6 GPa) are achieved at a substrate bias of −150 V. We also show that the minimum elastic modulus (41.8 GPa) is achieved at an intermediate substrate bias of −100 V.

Cutting performance of TiAlN-based thin films in micromilling high-speed steel AISI M3:2

Micromilling high-speed steel offers high precision in shape and geometry. However, the service life greatly depends on the wear resistance of protective thin films. In comparison to TiAlN, TiAlSiN and TiAlTaN thin films offer enhanced wear resistance for difficult-to-machine materials. Employing a hybrid process that combines direct current magnetron sputtering (dcMS) and high power pulsed magnetron sputtering (HiPIMS) enhances the properties of these films. In cutting tests, it is demonstrated that TiAlSiN and TiAlTaN outperform TiAlN in micromilling of high-speed steel AISI M3:2. Notably, dcMS/HiPIMS-TiAlSiN stands out by having the lowest reduction in cutting forces combined with reduced wear.

High power pulsed magnetron sputtering tailored low temperature CrAlN + MoWS coatings for dry tribological contacts

Gears are used in a variety of applications, for example, in automotive and aerospace industries. In these applications, gears are exposed to harsh conditions such as high Hertzian pressures. In many cases, lubricants are used to achieve a reduction in the coefficient of friction and, thus, in the wear of the components. Nevertheless, in some applications, the use of a lubricant is difficult, for example, in vacuum environments. One promising approach is the application of solid lubricants by using triboactive elements. The present study shows the potential of a process combining high power pulsed magnetron sputtering (HPPMS) and direct current magnetron sputtering (dcMS) for the deposition of CrAlN + MoWS coatings. In HPPMS/dcMS processes, especially, the share of HPPMS leads to higher ionization of the coating plasma and, therefore, to higher coating thicknesses on the teeth of gears. One major challenge in coating processes is the adjustment of the deposition temperature, since steels used for gear applications are temperature sensitive. Therefore, starting from an established coating process with a high coating temperature, the coating process was adjusted by reducing the number of used cathodes. By reducing the count of used dcMS cathodes, the share of HPPMS cathodes within the coating process was increased. Furthermore, segments of gears were coated in order to determine the coating thickness at different distances from the head of the gear tooth. A sufficient coating thickness distribution on the flank of the gear tooth is crucial for friction reduction and wear protection when used in gearboxes. The reduction of used cathodes led to a decrease in the coating temperature from a maximum coating temperature of Tmax = 281 °C to Tmax = 214 and 197 °C. It was shown by nanoindentation measurements that the effect of soft annealing was eliminated by reducing the coating temperature. At the same time, coatings deposited with increased HPPMS fraction led to a reduced coefficient of friction as well as lower wear volumes for pin-on-disk measurements in a dry tribological contact with an uncoated 100Cr6 counterpart. Moreover, these processes exhibited a good coatability of the gear tooth with a relatively high coating thickness even near the gear tooth root. The present study shows the potential of increasing the share of HPPMS during the deposition of coatings for dry-running applications. By increasing the HPPMS content, the tribological behavior as well as the coating thickness distribution on gears can be significantly improved.

Aluminum tantalum oxide thin films deposited at low temperature by pulsed direct current reactive magnetron sputtering for dielectric applications

This research aims at studying aluminum tantalum oxide thin films (AlxTayOz) deposited at low temperature for dielectric applications. These ternary oxide layers are synthesized at 180 °C by physical vapor deposition (PVD), specifically the mid-frequency pulsed direct current reactive magnetron sputtering. The deposition process uses targets made of a mixture of aluminum and tantalum in various proportions. Four target compositions are studied containing 95 at.%, 90 at.%, 80 at.%, and 70 at.% of aluminum, corresponding to 5 at.%, 10 at.%, 20 at.%, and 30 at.% of tantalum, respectively. The ternary oxide thin films of AlxTayOz are compared to aluminum oxide (AlxOz) and tantalum oxide (TayOz) layers produced in the same experimental conditions. The AlxTayOz thin films are dense, uniform, and amorphous regardless of the experimental conditions used in this study. Their chemical composition changes as a function of the target composition. The oxygen flow used during deposition also affects the chemical composition of the oxide layers and the deposition rate. The oxide thin films with tantalum are deposited at higher deposition rates and contain more oxygen. Tantalum also promotes the amorphization of the oxide layers. The highest dielectric strength is measured for the thin film containing a low amount of tantalum combined with a high amount of oxygen.

Large-area deposition of protective (Ti,Al)N coatings onto polycarbonate

Polycarbonate (PC) and protective (Ti,Al)N coatings exhibit extremely different material properties, specifically crystal structure, thermal stability, and elastic and plastic behavior, as well as thermal expansion coefficients. These differences present formidable challenges for the deposition process development as low-temperature synthesis routes have to be explored to avoid a thermal overload of the polymer substrate. Here, a large-area sputtering process is developed to address the challenges by systematically adjusting target peak power density and duty cycle. Adhering (Ti,Al)N coatings with a critical residual tensile stress of 2.2 ± 0.2 GPa are obtained in the pulsed direct current magnetron sputtering range, whereas depositions at higher target peak power densities, realized by high power pulsed magnetron sputtering, lead to stress-induced adhesive and/or cohesive failure. The stress-optimized (Ti,Al)N coatings deposited onto PC with a target peak power density of 0.036 kW cm−2 and a duty cycle of 5.3% were investigated by the cross-cut test, confirming adhesion. By investigating the bond formation at the PC|(Ti,Al)N interface, mostly interfacial CNx bonds and a small fraction of (C−O)−(Ti,Al) bonds are identified by x-ray photoelectron spectroscopy, indicating reactions at the hydrocarbon and the carbonate groups during deposition. Nanoindentation reveals an elastic modulus of 296 ± 18 GPa for the (Ti,Al)N coating, while a Ti–Al–O layer is formed during electrochemical impedance spectroscopy in a borate buffer solution, indicating protective passivation. This work demonstrates that the challenge posed by the extremely different material properties at the interface of soft polymer substrates and hard coatings can be addressed by the systematical variation in the pulsing parameters to reduce the residual film stress.

Significant texture and wear resistance improvement of TiN coatings using pulsed DC magnetron sputtering

Titanium nitride (TiN) coatings fabricated through reactive sputtering feature a suite of parameters capable of altering the microstructure and properties. Here, we explore the influence of bipolar pulsed direct current (DC) magnetron sputtering on microstructure evolution of TiN coating, in comparison to conventional DC sputtering. The implementation of a pulsed DC voltage profile promotes a drastic texture change from randomly oriented polycrystals to (111) textured TiN coatings across the full range of pulse frequencies on various Si substrates, including amorphous SiO2. Additionally, higher pulse frequencies promote significant grain size reduction, accompanied with corresponding increases in hardness and wear resistance. The potential mechanism for this microstructural and texture evolution is also explored.

Machine learning based model for plasma prediction in high power pulsed magnetron sputtering processes

The coating development using physical vapor deposition (PVD) is time intensive and expensive. The coating processes are usually developed and improved based on the operator's experience. In order to improve the understanding of the processes during coating deposition, methods of plasma diagnostics can be used. However, this is time intensive and requires the installation of special diagnostics. The aim of the current study is to build a machine learning based model of PVD processes to predict the ionized to excited intensity ratio of the plasma species during the coating process. This enables a knowledge-based, cost-reduced process improvement. Based on measured data of different coating processes, the models were trained and tested in the current study. Therefore, a database was established by measuring process and plasma properties in hybrid processes of direct current magnetron sputtering and high power pulsed magnetron sputtering using an industrial coating unit. Different processes with variations of cathode powers and gas flows of the reactive gases oxygen and nitrogen were processed. The intensities of the ionized and excited species were measured using optical emission spectroscopy with six substrate side positioned collimators for spatial resolution to calculate the intensity ratios. The data was measured time resolved during the coating process. Compared to the measured data, the predictions show similar trends and values for the species within the coating chamber. The model was used to predict the influence of oxygen gas flow for CrAlON coating development. Furthermore, the models can be used for a more targeted process development. This can contribute to the application oriented adjustment of the coating processes and the coating properties.

Super effective antimicrobial silver-sputtered coatings on poly(lactic acid) against bacteria and omicron SARS-CoV-2

Poly(lactic acid) (PLA) is a biopolymer with properties potentially suitable for fabricating packaging, medical devices, and healthcare products in a more friendly environmental way because this polymer presents biodegradability, compostability, low carbon footprint, and recyclability. However, PLA does not present intrinsic antimicrobial properties. Antimicrobial materials are highly desirable for manufacturing smart packaging and personal protective equipment to secure food and health professionals against pathogenic microorganisms. In this work, we evaluated the antimicrobial performance of (Ag)-coated PLA against Escherichia coli, Bacillus subtilis, and Omicron severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2). PLA was rapidly coated with metallic Ag by pulsed direct current magnetron sputtering (pDCMS) for 5, 10, and 20 s. Atomic force microscopy indicates that the Ag coating grows predominantly on the PLA surface via a bulk diffusion mechanism. According to bactericidal and quantitative reverse transcription polymerase chain reaction assays, Ag-coated PLA was capable of inhibiting bacterial biofilm formation and disrupting the genetic material of the Omicron SARS-CoV-2. X-ray high-resolution photoelectron and nuclear magnetic resonance results suggest no polymer chain scission in the PLA bulk due to plasma thermal stress effects during Ag sputtering.

Reactive pulsed direct current magnetron sputtering deposition of semiconducting yttrium oxide thin film in ultralow oxygen atmosphere: A spectroscopic and structural investigation of growth dynamics

An experimental investigation was conducted to explore spectroscopic and structural characterization of semiconducting yttrium oxide thin film deposited at 623 K (±5K) utilizing reactive pulsed direct current magnetron sputtering. Based on the results obtained from both x-ray diffraction and transmission electron microscope measurements, yttrium monoxide is very likely formed in the transition region between β-Y2O3 and α-Y2O3, and accompanied by the crystalline Y2O3. Resulting from either the low energy separation between 4d and 5s orbitals and/or different spin states of the corresponding orbitals’ sublevels, the stability of monoxide is most presumably self-limited by the size of the crystal in thermodynamic terms. This behavior develops a distortion in the structure of the crystal compared to the metal oxide cubic structure and it also effectuates the arrangement in nanocrystalline/amorphous phase. In addition to this, spectroscopic ellipsometry denotes that the semiconducting yttrium oxide has the dominant, mostly amorphous, formation character over crystalline Y2O3. Our purpose, by means of the current findings, is to advance the understanding of formation kinetics/conditions of yttrium with an unusual valency (2+).

High temperature steam oxidation behavior of textured Cr coatings with different grain structures

In order to improve the oxidation resistance of Zr-4 alloy in high temperature steam environment, Cr coatings with the 〈001〉 fiber texture were prepared on Zr-4 substrates by the high-power pulsed magnetron sputtering (HIPPMS) and direct current magnetron sputtering (DCMS) methods, and their structure and high temperature steam oxidation behavior at 1200 and 1300 °C were systematically investigated. The results showed that the fine grains of Cr coatings combined together to form large grains while the texture of the coatings was not changed during oxidation. Furthermore, cracks or defects formed during the combination of grain boundaries in the grain growth of DCMS Cr coating, providing paths for short-circuit diffusion of the oxidizing medium, which accelerated the oxidation of the Cr coating.

Multilayer thin films of aluminum oxide and tantalum oxide deposited by pulsed direct current magnetron sputtering for dielectric applications

This research describes the synthesis of multilayer thin films of aluminum oxide and tantalum oxide for dielectric applications. The multilayer thin films are made of two, four, or eight oxide layers produced by physical vapor deposition (PVD), specifically mid-frequency pulsed direct current magnetron sputtering. The oxide layers are stoichiometric Al2O3 and Ta2O5 with two specific morphologies observed from cross-section images obtained by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The Al2O3 layers exhibit a columnar structure whereas the Ta2O5 layers are uniform and dense. However, the morphology of the Ta2O5 layers changes progressively in the four-layer and eight-layer systems under the influence of the morphology of the Al2O3 layer below. This behavior is induced by the morphological continuity of the interface between two oxide layers. X-ray diffraction (XRD) shows the low crystallinity of these oxide layers due to the experimental conditions used during the magnetron sputtering process, particularly the low deposition temperature. The dielectric behavior of the multilayer thin films is studied by dielectric strength measurements. The results are compared to the values obtained for single layers of Al2O3 and Ta2O5 produced under the same experimental conditions. The two-layer system shows an intermediate value compared to the single layers, higher than Al2O3 and lower than Ta2O5. The dielectric strengths of the four-layer and the eight-layer systems are higher than those measured for the single layers of Al2O3 and Ta2O5. Finally, the morphology and the crystallinity of the multilayer thin films are changed by thermal annealing of these samples at 850 °C under vacuum. The thermal annealing induces crystallization of the Ta2O5 layers and the loss of morphological continuity at the interface between the oxide layers. These modifications result however in a lower dielectric strength for all the multilayer thin films.

Investigate the heat conduction between film and substrate during sputtering process by multi-layer structure NiCr/NiSi film thermocouples

The three layers of structure NiCr/NiSi film thermocouples (TFTCs) were deposited onto the glass substrate by the direct current pulsed magnetron sputtering technique. The hot junctions of three TFTCs were overlapped. Between the hot junctions, SiO2 insulation films were deposited. Then, the heat conduction between TiO2 film and substrate was investigated. The results showed that at the initial stage of TiO2 film growth, the electromotive force (EMF) of top TFTC was higher than that of middle TFTC. EMF difference between top and middle TFTCs increased with time. Meanwhile, EMF of bottom TFTC was also higher than that of middle TFTC. EMF difference between bottom and middle TFTCs increased with time. Until the critical time, the middle TFTC received the heat conduction from TiO2 film and substrate. At the critical time, EMF difference between top and middle TFTCs, as well as between bottom and middle TFTCs, reached the maximum, which meant the heat conduction equilibrium state between top, middle, and bottom TFTCs. Then, because of the heat conduction from hot junction to pads of TFTCs, EMF difference between top and middle TFTCs, as well as between bottom and middle TFTCs, both decreased with time.

SiO2: A Novel Electrolyte for High-Performance All-Solid-State Electrochromic Devices

For the practical application of electrochromic devices (ECDs), the development and preparation of high-performance electrolyte materials is one of the urgent problems to be solved. In this work, an all-solid-state ECD with the integrated structure of glass/ITO/WO3/Li/SiO2/NiO/ITO has been prepared by the magnetron sputtering method. The amorphous SiO2 film prepared by pulsed direct current reactive magnetron sputtering was used as the electrolyte layer in the ECD for the first time and shows promising potential due to its ultrahigh transparency, good intrinsic electronic insulation, and loose structure for fast ion conduction. The ECD exhibits low leakage current density (8.5 μA cm–2 for bleaching and 43.4 μA cm–2 for coloring), high optical modulation (ΔT = 71.9% at 707 nm), fast response speed (1.1 s for the bleaching process and 8.5 s for the coloring process), excellent cycle stability, and high coloration efficiency (126.4 cm2 C–1). This work not only indicates that SiO2 as a dielectric material can be used as the electrolyte layer in all-solid-state ECDs but also provides new avenues in the selection of electrolyte materials for the preparation of high-performance ECDs.

High performance inorganic all-solid-state electrochromic devices based on Si3N4 ion conducting layer

In electrochromic devices (ECDs), ion conducting layer has the vital function of conducting ions and blocking electrons. However, the limited electron blocking ability and preparation technology of conventional ion conducting materials hinder the commercial application of all-solid-state ECDs. In this work, a novel ion conducting material Si 3 N 4 film was deposited by pulsed direct current (p-DC) reactive magnetron sputtering with a Si target, and shows promising potential due to its ultrahigh transparency, anti-reflection effect and remarkable electron blocking ability. An ECD with the structure of glass/ITO/WO 3 /Li/Si 3 N 4 /NiO/ITO has been fabricated by magnetron sputtering, in which Si 3 N 4 film was used as ion conducting layer for the first time. The ECD presents much less leakage current density (<35 μA cm −2 ), large optical transmittance modulation (72.3% at 625 nm), fast response (1.3 s for bleaching and 13.1 s for coloring), high coloration efficiency (94.46 cm 2 C −1 ) and excellent cycle stability (91.4% retention of the maximum optical modulation after 10,000 cycles). This work not only demonstrates the great prospect of Si 3 N 4 film as an ion conducting layer in ECDs, but also provides a new idea in the selection of ion conducting materials for developing high-performance inorganic all-solid-state ECDs. • The Si 3 N 4 film is used as an ion conducting layer in ECDs for the first time. • Si 3 N 4 film was prepared by pulsed DC reactive magnetron sputtering. • The Si 3 N 4 film exhibits ultrahigh transparency and anti-reflection effect. • The Si 3 N 4 -based all-solid-state ECD shows large optical modulation 72.3% at 625 nm. • The ECD displays superior cycle stability over 10,000 cycles.

Deposition of Ga2O3 thin films by liquid metal target sputtering

This paper reports on the deposition of amorphous and crystalline thin films of Ga2O3 by reactive pulsed direct current magnetron sputtering from a liquid gallium target onto fused (f-) quartz and c plane (c-) sapphire substrates, where the temperature of the substrate is varied from room temperature (RT) to 800 °C. The deposition rate (up to 37 nm/min at RT on f-quartz and 5 nm/min at 800 °C on c-sapphire) is two to five times higher than the data given in the literature for radio frequency sputtering. Deposited onto unheated substrates, the films are X-ray amorphous. Well-defined X-ray diffraction peaks of β-Ga2O3 start to appear at a substrate temperature of 500 °C. Films grown on c-sapphire at temperatures above 600 °C are epitaxial. However, the high rocking curve full width at half maximum values of ≈2.4–2.5° are indicative of the presence of defects. A dense and void-free microstructure is observed in electron microscopy images. Composition analysis show stoichiometry close to Ga2O3 and no traces of impurities. The optical properties of low absorptance (<1%) in the visible range and an optical band gap of approximately 5 eV are consistent with the data in the literature for Ga2O3 films produced by other deposition methods.

Effect of Oxygen Content on the Properties of Sputtered TaOx Electrolyte Film in All-Solid-State Electrochromic Devices

Tantalum oxide (TaOx) thin films are one of the commonly used solid electrolytes in inorganic all-solid-state electrochromic devices (ECDs). The chemical composition and microstructure of TaOx films have a crucial influence on its electron blocking and ion transport properties in all-solid-state ECDs. In this work, various oxygen flux was used to deposit the TaOx films with different compositions and microstructures by pulsed direct current (p-DC) reactive magnetron sputtering. The structural properties, morphologies, chemical compositions, optical properties, electron blocking, and ionic conductive properties of the TaOx films were systematically investigated. The results show that in a certain range, the higher the oxygen flux, the stronger the ion transport ability of TaOx and the lower the electronic conductivity, which could be attributed to the loose structure and smaller number of oxygen vacancies of the films, respectively. Moreover, an all-solid-state ECD with the multilayer structure of glass/ITO/WO3/Li/TaOx/NiO/ITO was also fabricated by the magnetron sputtering method. The device exhibited excellent comprehensive electrochromic properties including high optical modulation, large coloring efficiency, fast response (especially bleaching process), and good cycle stability.

Optimization of Sputtering Process for Medium Entropy Alloy Nanotwinned CoCrFeNi Thin Films by Taguchi Method.

We demonstrate a systematic study optimizing the properties of CoCrFeNi medium entropy alloy (MEA) thin films by tuning the deposition parameters of the pulsed direct current (DC) magnetron sputtering process. The chemical composition and microstructure of thin films were studied with energy dispersive X-ray spectroscopy (EDS), an X-ray diffractometer (XRD) and a transmission electron microscope (TEM). Abundant nanotwins and the dual face-centered cubic-hexagonal close-packed (FCC-HCP) phases were formed in some specimens. The Taguchi experimental method and analysis of variance (ANOVA) were applied to find the optimized parameters. The control factors are five deposition parameters: substrate bias, substrate temperature, working pressure, rotation speed and pulsed frequency. According to the signal-to-noise ratio results, the optimized parameters for low electrical resistivity (98.2 ± 0.8 μΩ·cm), low surface roughness (0.5 ± 0.1 nm) and high hardness (9.3 ± 0.2 GPa) were achieved and verified with confirmed experiments.