Abstract
The direct current pulsed magnetron sputtering technology is employed to deposit TiO2 film onto the glass and Si(100) substrates. After annealing treatment, TiO2 film displays anatase (001) preferential orientation. The growth behavior of deposited and annealed TiO2 films is investigated. The results show that in the original stage, TiO2 film growth behavior is in Volmer–Weber mode, which is dominated by the diffusion effect. Considering the rivalry between TiO2 crystal nuclei, both crystallographic orientation and diffusion effects jointly dominate the film growth behavior in the rest stage. More importantly, the annealing treatment resulted in the coalescence of TiO2 crystal nuclei, as well as the growth of TiO2 crystal nuclei. Most importantly, after coalescence and growth of TiO2 nuclei, the anatase [001] crystal orientation of TiO2 grains remains the same as the normal direction of TiO2 film. Finally, after annealing treatment, TiO2 films comprise anatase (001) preferential orientation.
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