Characterization Of Thin Films Research Articles

Characterization of Ba-Sr Thin Films Deposited by Spray Pyrolysis and Fabrication of Ag/Ba-Sr/n-Si/Ag Diodes

This study describes the synthesis of barium (Ba) and strontium (Sr) thin films using jet atomizer spray pyrolysis (JNSP) technology, which facilitates the fabrication of junction diodes whose structure, surface morphology, and optical properties are affected by significant water absorption. Ba-Sr films with different strontium concentrations (specifically 0, 2, 4 and 6 wt%) were further investigated to provide a better understanding of how this change affects the final diode type. The research design focuses on fabricating n-type silicon junction diodes containing barium and strontium and directly measuring and analysing their I-V characteristics, ultimately helping elucidate these devices' electrical behaviour. Among the analysed diodes, Ag/Ba-Sr/n-Si/Ag diode performed well in various design tests, indicating its competitiveness due to its goodness in optoelectronic devices. The ideal value (n) of a 6 wt.% Ba-Sr diode is 1.77 and the barrier height (ΦB) is 0.84 eV. These results demonstrate the general future of Ba-Sr junction diode, as they not only reveal important discoveries regarding their electrical properties but also demonstrate the potential for improved performance in optoelectronic applications.

Synthesis and characterization of Sn-doped TiO2 thin films for biosensor application

TiO2 a wide bandgap material has a great potential for use in semiconductor industry due to its better electronic properties combined with low cost, chemical stabilioty and nontoxicity. Further metal doping is found to modify the conductivity, electrical, and optical characteristics. In this research, deposition of Sn-doped TiO2 was carriedout using the spray pyrolysis technique. The electrical properties were obtained by using the Hall effect technique and structural properties of the film were analyzed by X-ray diffraction and EDAX Scanning electron microscopy. The result of X-ray diffraction showed that the thin film deposited by spray pyrolysis is polycrystalline with preferential orientation in the direction of (002) fields. SEM analysis exhibited membrane structure for the thin film deposited by spray pyrolysis. The results of electrical conductivity were obtained by using the Hall effect technique.

Formation and characterization of Ag2La thin films designed for high $$k$$-dielectric and terahertz applications

Formation and characterization of Ag2La thin films designed for high $$k$$-dielectric and terahertz applications

Chemically deposited nanocrystalline ZnMgS thin film: The impact of deposition time on its structural and optical properties

This work reports the growth and characterization of nanocrystalline Zinc magnesium sulphide thin films fabricated on glass substrates using the chemical bath deposition technique. X-ray diffraction studies revealed that the as-prepared films are nanocrystalline in nature and possess a cubic phase with a preferred orientation along the (111) plane. The crystallite size increases from 18.3 to 29 nm with deposition time. The field emission scanning electron microscope micrographs showed uniform nanostructures on the film surface. The grain sizes increased from 215 to 310 nm with deposition time. EDX spectra displayed the presence of elements Zn, Mg, and S. The absorbance peak increased with deposition time and all the films had a transmittance of over 80 %. From the absorption measurements, the band gap showed an increase from 3.848 eV to 3.945 eV with deposition time. The fabricated ZnMgS thin films exhibit crucial characteristics suitable for optoelectronic devices.

Synthesis, characterization and photoelectrochemical performance of Bi2Fe4O9 thin films

Mullite-type Bi2Fe4O9 has been little explored in thin film form as a photoanode for photoelectrochemical water splitting. In this study, Bi2Fe4O9 thin films have been prepared using the sol-gel technique from a simple precursor solution based on the corresponding metal salts, acetic acid, and polyvinyl alcohol. The films were deposited by dip-coating onto fluorine-doped tin oxide substrates and dried at 350 °C, repeating the dipping-drying cycle six times, and finally sintered at 600 °C. The films were characterized by GIXRD, revealing the formation of the material in its orthorhombic phase. Raman spectroscopy showed the Ag and B1g vibrational modes, validating the formation of the bismuth iron oxide. UV–Vis transmittance measurements revealed that the material exhibits two optical transitions: a direct band gap of 2.86 eV and an indirect band gap of 1.98 eV. FESEM micrographs and AFM images showed a uniform nanostructured surface morphology. The photoelectrochemical properties of the Bi2Fe4O9 films were studied using cyclic voltammetry and chronoamperometry with front side illumination, demonstrating the stability of the material in aqueous media and the generation of photocurrent in the presence of H2O2. Furthermore, results from intensity-modulated photocurrent spectroscopy (IMPS) revealed that the photocurrent is limited by both bulk and surface recombination and a short hole diffusion length.

Synthesis and characterization of stretchable isoprene-acrylic acid copolymer thin films

Copolymer thin films of isoprene with acrylic acid were synthesized using PECVD. In that way, the stretchable functionality of polyisoprene (PI) was combined with the hydrophilic functionality of poly(acrylic acid) (PAA) to obtain stretchable thin films with adjustable wettabilities. Deposition rates were found to change between 9 and 5.5 nm/min depending on the monomer flowrates. The analysis of water contact angle (WCA) values indicated that films having more AA units in their structures were more wettable. The stretchability of the films was assessed on laboratory gloves through stretch-release test and on PET sheet through bend-release test. No significant changes in the WCA values with no observable cracks and failures after successive tests were indication of stretchability of the copolymer films.

A wafer-level characterization method of thin film transverse piezoelectric coefficient evaluation

Accurate measurement of the piezoelectric property of thin films is critical for thin film process development and device design optimization. In this paper, we proposed a wafer-level thin film characterization method that provides a non-destructive, single-side measurement solution for evaluating and in-process monitoring the transverse piezoelectric coefficient (e31,f). The e31,f of piezoelectric films was determined by measuring the deflection of circular electrode induced by the converse piezoelectric effect, with the electrodes fabricated on top of piezoelectric thin film on a silicon substrate. The constitutive equation of the unimorph plate reveals a quadratic dependence of top electrode deflection (δ) on the radius (r), which was subsequently utilized to calculate the e31,f while considering the electrode edge effect. Determined by non-constant variations of |δ/r2| from finite element method (FEM) simulation results, the electrode edge effect leads to the specification of electrode size and substrate thickness for evaluating piezoelectric coefficient. A comprehensive FEM simulation analysis of the influence of wafer size and electrode location on the accuracy of the proposed method demonstrated its reliability for wafer-level characterization. The e31,f measurement results of single-crystal (s-PZT) and polycrystalline PZT (p-PZT) exhibit good agreement between the proposed wafer-level method and the die-level cantilever method. These results demonstrated that the proposed single-side wafer-level method provides a reliable measurement technique for e31,f characterization of piezoelectric thin film.

Polarized Raman mapping and phase-transition by CW excitation for fast purely optical characterization of VO2 thin films

Vanadium dioxide has attracted much interest due to the drastic change of the electrical and optical properties it exhibits during the transition from the semiconductor state to the metallic state, which takes place at a critical temperature of about 68 °C. Much study has been especially devoted to developing advanced fabrication methodologies to improve the performance of VO2 thin films for phase-change applications in optical devices. Films structural and morphological characterisation is normally performed with expensive and time consuming equipment, as x-ray diffractometers, electron microscopes and atomic force microscopes. Here we propose a purely optical approach which combines Polarized Raman Mapping and Phase-Transition by Continuous Wave Optical Excitation (PTCWE) to acquire through two simple measurements structural, morphological and thermal behaviour information on polycrystalline VO2 thin films. The combination of the two techniques allows to reconstruct a complete picture of the properties of the films in a fast and effective manner, and also to unveil an interesting stepped appearance of the hysteresis cycles probably induced by the progressive stabilization of rutile metallic domains embedded in the semiconducting monoclinic matrix.

Characterization and application of electrochemical deposition Cdse thin films

The electrochemical deposition method created a CdSe thin film on FTO glass substrates. The film was examined using field scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, Raman spectroscopy, and optical and electrochemical measurements. The results show that the CdSe nanoparticles were evenly distributed on the substrate, with a Cd/Se ratio of 63.30% Se and 36.70% Cd. The XRD revealed a polycrystalline, hexagonal structure. The film is n-type semiconductor concentration with a carrier concentration of 1.194×1020 cm-3 . The CdSe showed 552.5 mF/cm2 of specific capacity with energy and a power density of 2.5 mW/cm2 and 9000 mW/cm2 , respectively

High Throughput Characterization of Organic Thin Film Transistors.

Automation is vital to accelerating research. In recent years,the application of self-driving labs to materials discovery and device optimization has highlighted many benefits and challenges inherent to these new technologies. Successful automated workflows offer tangible benefits to fundamental science and industrial scale-up by significantly increasing productivity and reproducibility all while enabling entirely new types of experiments. However, it's implemtation is often time-consuming and cost-prohibitive and necessitates establishing multidisciplinary teams that bring together domain-specific knowledge with specific skillsets in computer science and engineering. This perspective article provides a comprehensive overview of how the research group has adopted "hybrid automation" over the last 8 years by using simple automatic electrical testers (autotesters) as a tool to increase productivity and enhance reproducibility in organic thin film transistor (OTFT) research. From wearable and stretchable electronics to next-generation sensors and displays, OTFTs have the potential to be a key technology that will enable new applications from health to aerospace. The combination of materials chemistry, device manufacturing, thin film characterization and electrical engineering makes OTFT research challenging due to the large parameter space created by both diverse material roles and device architectures. Consequently, this research stands to benefit enormously from automation. By leveraging the multidisciplinary team and taking a user-centered design approach in the design and continued improvement of the autotesters, the group has meaningfully increased productivity, explored research avenues impossible with traditional workflows, and developed as scientists and engineers capable of effectively designing and leveraging automation to build the future of their fields to encourage this approach, the files for replicating the infrastructure are included, and questions and potential collaborations are welcomed.

Facile synthesis and characterization of Cu2Se thin films and self-powered p-Cu2Se/n-Si heterojunction with high-performance photoresponse

A facile, cost-effective, and scalable chemical vapor deposition technique was used to synthesize p-type Cu2Se thin films on glass and n-type Si substrates. Thorough characterization confirmed the films’ β-phase structure with the correct stoichiometric ratio and exceptional crystalline quality, exhibiting behavior akin to a degenerate semiconductor. Measurements unveiled a work function of 4.83 eV and a bandgap of 2.13 eV for Cu2Se. The fabrication of a p-Cu2Se/n-Si heterojunction was achieved by depositing the p-type Cu2Se thin film onto the n-type Si substrate. The resulting heterostructure displayed rectification behavior, and its energy band diagram resembled a Schottky diode. Further exploration into its photoelectric properties showcased the p-Cu2Se/n-Si heterostructure’s favorable self-powered attribute, characterized by fast, steady, reproducible, sensitive, and robust photoresponsive performance. Consequently, it proves highly suitable for applications in high-frequency photodetectors. Additionally, the p-Cu2Se/n-Si heterojunction’s photovoltaic power conversion efficiency exceeded the reported values of the CuO/Si and Cu2O/Si systems. Here, this study contributes significantly to the pivotal evaluation of p-Cu2Se/n-Si heterostructures for promising optoelectronic applications.

Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films.

Raman spectroscopy, a versatile and nondestructive technique, was employed to develop a methodology for gallium oxide (Ga2O3) phase detection and identification. This methodology combines experimental results with a comprehensive literature survey. The established Raman approach offers a powerful tool for nondestructively assessing phase purity and detecting secondary phases in Ga2O3 thin films. X-ray diffraction was used for comparison, highlighting the complementary information that these techniques may provide for Ga2O3 characterization. Few case studies are included to demonstrate the usefulness of the proposed spectroscopic approach, namely the impact of deposition conditions such as metal-organic vapor-phase epitaxy and pulsed electron deposition (PED), and extrinsic elements provided during growth (Sn in the case of PED) on Ga2O3 polymorphism. In conclusion, it is shown that Raman spectroscopy offers a quick, reliable, and nondestructive high-resolution approach for Ga2O3 thin film characterization, especially concerning phase detection and crystalline quality.

Synthesis and Characterization of Cobalt-doped Titanium Dioxide Thin Films as Solar Cell Components using UV-SEM Analysis

Research has been carried out in the form of the synthesis and characterization of thin films of titanium dioxide with the addition of cobalt doping. The purpose of this research was to synthesize and characterize thin films related to optical properties, morphological shapes, and components of thin film compounds that are good for use as basic materials for the development of nanoparticle technology in the form of solar cells. The research was carried out in two stages, namely synthesis such as preparation of glass substrates, preparation of sol-gel solutions, deposition of solutions onto glass substrates, and heating of TiO2:Co thin film samples. The next stage is the thin film characterization test, where the optical properties of the thin film, such as absorbance, transmittance, gap energy, and activation energy, are measured using a UV-vis spectrophotometer, while morphological data and components of the thin layer compounds are measured using a Scanning Electron Microscope-Energy Dispersive X-rays (SEM-EDX). Based on data analysis and discussion, it was found that the optical properties, such as the transmittance value of the thin film, experienced the lowest point at a wavelength of 250–280 nm with a maximum percentage value of 62.14 to 78.85%. The greater the doping concentration, the lower the transmittance value. This condition is inversely proportional to the absorbance value of the maximum TiO2:Co thin film, which is in the region with a wavelength of 280–300 nm and a value of 5.70–6.31. The greater the doping concentration, the greater the absorbance value. The energy bandgap values of TiO2:Co thin films for doping concentrations (0, 5, 10, 15, 20)% were 3.44; 3.39; 3.38; 3.32; 3.22 eV for the direct energy bandgap and 3.86; 3.85; 3.84; 3.85; 3.82 eV for the indirect energy gap. The activation energy of the TiO2:Co thin film decreased from 2.86 to 2.26 eV. As for the morphological data of the TiO2:Co thin film, it was found that the greater the concentration of doping, the layer was deposited evenly, finely, and homogeneously. Regarding the data on the components of the thin layer compounds, it was found that the percentage of TiO2 content was in the range of 64.48–95.94%, while for Co, it was in the range of 0.00–19.21%.

Preparation and characterization of chromium oxide thin films: The response of morphology, crystal structure, and electrical properties to oxygen pressure under magnetron sputtering

This study focuses on Cr2O3 prepared via reactive magnetron sputtering, a direct deposition technique that significantly impacts the microstructure and optoelectronic properties of the films. Reactive sputtering alters grain size, density, and surface morphology, which in turn affects the structural order and stoichiometry. By adjusting the ratio of process gases, particularly the oxygen partial pressure, the stoichiometry of the deposited films was controlled. This is crucial for managing the oxidation state of chromium and the concentration of free electrons. An optimal oxygen partial pressure of 75 % was identified, substantially reducing oxygen interstitial defects in the CrOx materials and enhancing conductivity by nearly two orders of magnitude. Additionally, increasing the oxygen partial pressure helped integrate more oxygen atoms into the lattice, transitioning the electronic structure from a metallic state in CrO2 to a semiconductive state in CrO3. This fine-tuning of oxygen doping not only adjusts carrier concentrations but also optimizes the photoelectric properties of the materials, achieving a tailored high band gap of 3.34 eV. This study highlights the potential of reactive magnetron sputtering to customize semiconductor materials through oxygen doping, offering a novel approach to enhance the versatility and application range of chromium oxide materials in advanced technological applications.

Equivalent circuit fitting method for microwave characterisation of low-k dielectric thin films

Abstract A new equivalent circuit fitting analysis scheme is proposed to analyse the measured data of test structures originally developed to characterise high-κ dielectrics at frequencies up to 5 GHz (Zhengxiang et al 1998 IEEE Trans. Electron Devices 45 1811–6). It is compared to an extension of the analysis which can be used for high-κ dielectrics at up to 50 GHz (Rundqvist et al 2004 Integr. Ferroelectr. 60 1–19). The proposed scheme focuses on the accurate characterisation of low-κ dielectrics, which exhibit greater sensitivity to various parasitics. The scheme utilises the same concentric capacitor devices and measurement setup as the original method, maintaining the advantage of ease in fabrication of the original approach. The physical model employed in the analysis step of the original method, which tended to overestimate the dielectric permittivity, has been enhanced by incorporating fringing fields and a parasitic gap capacitance as circuit elements. The accuracy of the new approach is validated using experimental data, demonstrating its ability to more accurately determine the dielectric permittivity compared to the original method.

Characterization of alane (AlH3) thin films grown by atomic layer deposition for hydrogen storage applications

Alane (AlH3) is an increasingly favored material for hydrogen and energy storage. It has demonstrated its potential in various applications, including rocket fuel, explosives, reducing agents, and serving as a viable source of hydrogen for portable fuel cells. In this study, we present the fabrication, morphology and elemental characterization of an AlH3 thin film grown through atomic layer deposition using a dimethylethylamine alane (DMEAA; AlH3N(CH3)2(CH2CH3)) precursor. The AlH3 thin film exhibited a rough surface with a white-like appearance, forming coarse grains as observed via scanning electron microscopy. X-ray diffraction confirmed the presence of AlH3 and it was compared with an aluminum thin film. Energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy confirmed the presence of pure AlH3 under a very thin aluminum oxide surface layer. Additionally, we propose a dissociation reaction mechanism based on the DMEAA precursor. Our work contributes to the advancement of hydrogen storage materials and energy-related applications that necessitate high hydrogen storage capacity and energy efficiency.

Characterization of Mg-Alloyed Zinc Oxide Thin Films for Memory Devices via Transmission Electron Microscopy Analyses

Characterization of Mg-Alloyed Zinc Oxide Thin Films for Memory Devices via Transmission Electron Microscopy Analyses

Quantitative Imaging that Makes Magnetic Rotational Spectroscopy with Nanorods a Tool for Characterization of Nanoliter Droplets and Thin Films

Quantitative Imaging that Makes Magnetic Rotational Spectroscopy with Nanorods a Tool for Characterization of Nanoliter Droplets and Thin Films

Synthesis and Characterization of Un-Doped and Copper Doped Nickel Oxide Thin Films

Synthesis and Characterization of Un-Doped and Copper Doped Nickel Oxide Thin Films

Advancements in Novel Mechano-Rheological Probes for Studying Glassy Dynamics in Nanoconfined Thin Polymer Films.

The nanoconfinement effects of glassy polymer thin films on their thermal and mechanical properties have been investigated thoroughly, especially with an emphasis on its altered glass transition behavior compared to bulk polymer, which has been known for almost three decades. While research in this direction is still evolving, reaching new heights to unravel the underlying physics of phenomena observed in confined thin polymer films, we have a much clearer picture now. This, in turn, has promoted their application in miniaturized and functional applications. To extract the full potential of such confined films, starting from their fabrication, function, and various applications, we must realize the necessity to have an understanding and availability of robust characterization protocols that specifically target thin film thermo-mechanical stability. Being nanometer-sized in thickness, often atop a solid substrate, direct mechanical testing on such films becomes extremely challenging and often encounters serious complexity from the dominating effect of the substrate. In this review, we have compiled together a few important novel and promising techniques for mechano-rheological characterization of glassy polymer thin films. The conceptual background involved in each technique, constitutive equations, methodology, and current status of research are touched upon following a pedagogical tutorial approach. Further, we discussed each technique's success and limitations, carefully covering the puzzling or contradicting observations reported within the broad nexus of glass transition temperature-viscosity-modulus-molecular mobility (including diffusion and relaxation).