Abstract
This study describes the synthesis of barium (Ba) and strontium (Sr) thin films using jet neublizer spray pyrolysis (JNSP) technology, which facilitates the fabrication of junction diodes whose structure, surface morphology, and optical properties are affected by significant water absorption. Ba–Sr films with different strontium concentrations (specifically 0, 2, 4 and 6 wt%) were further investigated to provide a better understanding of how this change affects the final diode type. The research design focuses on fabricating n-type silicon junction diodes containing barium and strontium and directly measuring and analyzing their I–V characteristics, ultimately helping elucidate these devices' electrical behavior. Among the analyzed diodes, the Ag/Ba–Sr/n-Si/Ag diode performed well in various design tests, indicating its competitiveness due to its goodness in optoelectronic devices. The ideal value (n) of a 6 wt% Ba–Sr diode is 1.77 and the barrier height (ΦB) is 0.84 eV. These results demonstrate the general future of Ba–Sr junction diode, as they not only reveal important discoveries regarding their electrical properties but also demonstrate the potential for improved performance in optoelectronic applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.