Abstract
An automated nebulizer spray pyrolysis (ANSP) system is developed for fabricating p-Zn:CuO/n-Si junction diode. The mechanical carriage for the X-Y movement and the proposed ANSP system is designed using the Solid Works design software tool. ATmega-328 microcontroller-based control system was developed to control and move the spray nozzle in the X and Y-axis direction. Zn:CuO (p-type) precursor solution is sprayed on the silicon wafer (n-type) using this ANSP system to form p-Zn:CuO/n-Si junction diode. The process parameters and operating conditions were optimized. The fabricated p-Zn:CuO/n-Si junction diode parameters such as ideality factor (η) and barrier height (φb) were studied under dark and light conditions using Keithley electrometer. The investigation results revealed that the junction diode has the lowest ideality factor and barrier height.
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