Abstract
• Ag/Ba/n-Si/Ag structured junction diode were successfully fabricated using JNSP method. • Surface morphology of films exhibited nanoplate-like structures. • I-V characteristics of the Ag/Ba/n-Si/Ag diode a superior performance light condition. • In particular, substrate temperature 550°C diode is apt for the optoelectronic applications. In this research work, we have fabricated junction diode based on barium thin films. The film was coated on a glass plate and silicon substrate by low-cost spray pyrolysis coating technique via different substrate temperature as 400°C, 450°C, 500°C and 550°C. Structure, surface morphology, optical and electrical characteristics of barium films were investigated. In particular, the I-V characteristic diode parameters of Ag/Ba/n-Si/Ag diodes in different temperature were analysed. The maximum barrier height (Φ b ) for the diode fabricated substrate at temperature 550°C was observed as 0.78eV. Also, from minimum ideality factor (n) of the diode parameters, the maximum substrate temperature was found. From I to V analysis it was revealed that the fabricated diodes were more suitable for the growth of high-quality optoelectronic applications.
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