Characterization Of Thin Films Research Articles

Characterization and photocatalytic activity of TiO2 thin films prepared by sol-gel method for NOx degradation

Titanium dioxide (TiO2) thin film photocatalysts for the elimination of nitrogen oxides (NOx) were prepared by the dip-coating process using the sol–gel method. To prepare the sols, titanium (IV) butoxide (Ti(OBu)4), diethanolamine (DEA), butanol, and HCl were chosen. The TiO2 coatings were prepared using sols with varying volume ratios of Ti(OBu)4:DEA:Butanol. Additionally, three withdrawal speeds from the sol were employed. Subsequently, the TiO2 thin films were sintered at 500 and 700 °C. The obtained thin films were characterized using SEM to determine thickness, AFM to determine roughness, and the Step 500 platform for the adhesion test. NOx was found to be efficiently eliminated by TiO2 thin film photocatalyst. It is possible to obtain a TiO2 coating that is capable of degrading 300 ppb of NO in real time under specific conditions: a relative humidity of 30 %, a UV intensity of 20 W/m2, a gas flow rate of 1 dm3/min.

Synthesis and characterization of Nd-doped CeO2 thin films grown by spray pyrolysis method: Structural, optical and electrochemical properties

In the present research, we successfully synthesized thin films of Cerium Oxide (CeO2) and Neodymium (Nd) doped CeO2 on both glass and ITO substrates using the chemical spray pyrolysis method. Their structural, morphological, optical and electrochemical properties were experimentally studied. X-ray diffraction analyses showed that all the layers exhibited the cubic fluorite phase characteristic of CeO2. Raman spectroscopy reveals a downward F2g band shift in all Nd3+-doped CeO2 films due to oxygen vacancies. The asymmetry and broadening of the Raman modes arise from the injection of Nd3+ ions in CeO2 thin films, which leads to variations in the presence of Ce3+ and oxygen vacancies. Additionally, the morphology of the films changes with different levels of Nd-doping. The UV–Vis-NIR spectra obtained in the wavelength scale between 300 nm and 1800 nm showed a noticeable reduction in the band gap from 3.46 eV to 3.30 eV. The cyclic voltammetry (CV) results indicate that the addition of Nd improves the ion storage capacities (ISC) of the cerium oxide thin film. Even after the intercalation/deintercalation of lithium ions, the doped cerium oxide thin films remain fully transparent. These significant findings broaden the potential applications of this oxide, particularly for electrochromic devices.

Correction: Characterization of Tin Disulfide Thin Films Prepared by Spin Coating Technique: Effect of Spin Speed and Deposition Time on Film Properties

Correction: Characterization of Tin Disulfide Thin Films Prepared by Spin Coating Technique: Effect of Spin Speed and Deposition Time on Film Properties

Unveiling the Versatile Realm of CdSnO3 Nanoparticles for Advanced Sensing Applications

This study presents the synthesis and characterization of CdSnO3 thin films at different deposition temperatures 400, 500 and 600 °C. The prepared samples were characterized by XRD, FTIR, SEM, EDAX, TEM, optical and ammonia gas sensing properties respectively. X-ray diffraction confirms the orthorhombic crystal structure, with prominent peaks corresponding to the (111), (112), (103), (130), and (133) planes. The mean crystallite size is determined to be 84 nm. Scanning electron microscopy reveals morphological changes with varying substrate temperatures. Energy-dispersive X-ray spectroscopy shows elemental composition variations, highlighting non-stoichiometric CdSnO3 thin films. Transmission electron microscopy images depict larger spherical thin films with clear lattice fringes. Fourier-transform infrared spectra confirm the presence of Cd-O and Sn-O bonds. Optical properties yield a calculated band gap was decreased with increase in temperature. Gas sensing tests demonstrate significant sensitivity to ammonia gas concentrations, with responses affected by ammonia concentrations. Overall, CdSnO3 thin films show promise for applications in diverse fields due to their tunable properties and potential for tailored performance.

Orientational analysis of atomic pair correlations in nanocrystalline indium oxide thin films.

The application of grazing-incidence total X-ray scattering (GITXS) for pair distribution function (PDF) analysis using >50 keV X-rays from synchrotron light sources has created new opportunities for structural characterization of supported thin films with high resolution. Compared with grazing-incidence wide-angle X-ray scattering, which is only useful for highly ordered materials, GITXS/PDFs expand such analysis to largely disordered or nanostructured materials by examining the atomic pair correlations dependent on the direction relative to the surface of the supporting substrate. A characterization of nanocrystalline In2O3-derived thin films is presented here with in-plane-isotropic and out-of-plane-anisotropic orientational ordering of the atomic structure, each synthesized using different techniques. The atomic orientations of such films are known to vary based on the synthetic conditions. Here, an azimuthal orientational analysis of these films using GITXS with a single incident angle is shown to resolve the markedly different orientations of the atomic structures with respect to the planar support and the different degrees of long-range order, and hence, the terminal surface chemistries. It is anticipated that orientational analysis of GITXS/PDF data will offer opportunities to extend structural analyses of thin films by providing a means to qualitatively determine the major atomic orientation within nanocrystalline and, eventually, non-crystalline films.

Preparation and characterization of niobium nitride thin films by radio frequency sputtering method onto medical grade Ti6Al4V alloy

Preparation and characterization of niobium nitride thin films by radio frequency sputtering method onto medical grade Ti6Al4V alloy

MOCVD Epitaxial Growth and Characterization of Polar, Semipolar and Nonpolar InN Thin Films

MOCVD Epitaxial Growth and Characterization of Polar, Semipolar and Nonpolar InN Thin Films

Design, synthesis and characterization of hierarchical porous stacked thin films based on MOFs and ordered mesoporous oxides

Integration of mesoporous thin films and metal–organic frameworks as stacked bilayers, towards hierarchical porous 1D photonic crystals.

Synthesis and Characterisation of Czts and Cu2-Xagxznsns4 Thin Films for the Application of Solar Cells.

Synthesis and Characterisation of Czts and Cu2-Xagxznsns4 Thin Films for the Application of Solar Cells.

PASCAL: the perovskite automated spin coat assembly line accelerates composition screening in triple-halide perovskite alloys

PASCAL enables systematic exploration and data-driven analysis within the halide perovskite composition space, showcasing its efficacy as an automated platform for solution-processed optoelectronic thin film research.

On the origin of epitaxial rhombohedral-B4C growth by CVD on 4H-SiC.

Rhombohedral boron carbide, often referred to as r-B4C, is a potential material for applications in optoelectronic and thermoelectric devices. From fundamental thin film growth and characterization, we investigate the film-substrate interface between the r-B4C films grown on 4H-SiC (0001̄) (C-face) and 4H-SiC (0001) (Si-face) during chemical vapor deposition (CVD) to find the origin for epitaxial growth solely observed on the C-face. We used high-resolution (scanning) transmission electron microscopy and electron energy loss spectroscopy to show that there is no surface roughness or additional carbon-based interlayer formation for either substrate. Based on Raman spectroscopy analysis, we also argue that carbon accumulation on the surface hinders the growth of continued epitaxial r-B4C in CVD.

Tuning of Graphene Oxide Thin Films Synthesis and Characterization with Electronic Behaviour

Tuning of Graphene Oxide Thin Films Synthesis and Characterization with Electronic Behaviour

Impact of doping on the mechanical properties of conjugated polymers.

Conjugated polymers exhibit a unique portfolio of electrical and electrochemical behavior, which - paired with the mechanical properties that are typical for macromolecules - make them intriguing candidates for a wide range of application areas from wearable electronics to bioelectronics. However, the degree of oxidation or reduction of the polymer can strongly impact the mechanical response and thus must be considered when designing flexible or stretchable devices. This tutorial review first explores how the chain architecture, processing as well as the resulting nano- and microstructure impact the rheological and mechanical properties. In addition, different methods for the mechanical characterization of thin films and bulk materials such as fibers are summarized. Then, the review discusses how chemical and electrochemical doping alter the mechanical properties in terms of stiffness and ductility. Finally, the mechanical response of (doped) conjugated polymers is discussed in the context of (1) organic photovoltaics, representing thin-film devices with a relatively low charge-carrier density, (2) organic thermoelectrics, where chemical doping is used to realize thin films or bulk materials with a high doping level, and (3) organic electrochemical transistors, where electrochemical doping allows high charge-carrier densities to be reached, albeit accompanied by significant swelling. In the future, chemical and electrochemical doping may not only allow modulation and optimization of the electrical and electrochemical behavior of conjugated polymers, but also facilitate the design of materials with a tunable mechanical response.

A CPW Resonator for Complex Dielectric Characterization of Thin Films at W-Band

A CPW Resonator for Complex Dielectric Characterization of Thin Films at <i>W</i>-Band

Systematic Investigation on the Synergistic Impact of Gallium (Ga)-Boron (B) Co-Doping on the Features of ZnO Films

Herein, gallium-boron co-doped ZnO (GBZO) thin films (TFs) of varying percentages of Ga and B doping content were coated on glass slides via spin-coating technique. The impact of doping content on the features of GBZO TFs was comprehensively probed in this work. The characterization results demonstrate that the doping content has a profound impact on the features of GBZO TFs. The X-ray diffraction results verify the polycrystalline nature of GBZO TFs with varying diffraction peak intensities. AFM images disclose the smooth coating of GBZO TFs with low surface roughness. UV–Vis-NIR transmittance spectra reveal that the deposited TFs exhibit high transparency over 86 % in range of 400-800 nm wavelength with excellent optical properties. The electrical resistance measurements indicate that GBZO TFs having doping concentrations of 2.5 at. % of Ga and 0.5 at. % of B has the lower resistivity, and the resistivity of the samples are strongly affected by the doping content. The obtained knowledge from this study could be useful for the fabrication of TF based optoelectronic devices.

Preparation and characterization of cobalt ferrite CoFe2O4 thin films from alcoholic medium and their application restrictions

Preparation and characterization of cobalt ferrite CoFe2O4 thin films from alcoholic medium and their application restrictions

Mn Doped ZnO Film for Ethanol Vapor Detection

It has become a major challenge to develop highly sensitive and selective ZnO gas sensors to detect the leakage of toxic and explosive gases due to their high operating temperature. This article reports the design, characterization, and application of a Mn-doped ZnO thin film for ethanol gas vapor detection at a relatively lower temperature. To achieve this, undoped (0%) and Mn doped ZnO thin films were prepared using a spin coating technique and their structural, morphological and optical characterizations were carried out using XRD, SEM, EDX and UV-vis spectrophotometer. The XRD analysis showed a polycrystalline ZnO structure with the preferred orientations along (100), (002), (101), (102), (110), (103), and (200) planes. Upon Mn doping, the average crystallite size and band gap of ZnO were found to be decreased, which indicated that Mn ions substitute into the lattice of ZnO. Interestingly, SEM images revealed the grainy like porous ZnO surfaces. The EDX results confirmed the presence of Mn dopant in the ZnO lattice. In the doped films, the changes in particle size and grain boundaries of nanocrystalline ZnO resulted changes in sensitivity and operating temperature of ZnO gas sensor. The sensitivity measurements towards ethanol vapor showed significant decrease of the operating temperature from 220°C to 160°C as Mn concentration was increased from 0 to 5%. As-prepared Mn-doped ZnO sensors will be useful for sensing ethanol vapor at relatively low temperature.

Growth and Structural Characterization of h-LuMnO3 Thin Films Deposited by Direct MOCVD.

In this work, we investigated the MOCVD conditions to synthesize thin films with the hexagonal P63cm h-LuMnO3 phase as a potential low-band gap ferroelectric material. The main parameters investigated were the ratio of organometallic starting materials, substrate temperature, and annealing effect. Two different substrates were used in the study: fused silica (SiO2) glass and platinized silicon (Pt\Ti\SiO2\Si(100)). In order to investigate the thermodynamic stability and quality of the developed phases, a detailed analysis of the crystal structure, microstructure, morphology, and roughness of the films was performed by X-ray diffractometer, scanning electron microscopy (SEM), energy dispersive spectrometry (EDS), Raman spectroscopy, and piezoelectric force microscopy (PFM). Molar compositions in the film within 0.93 < |Lu|/|Mn| < 1.33 were found to be suitable for obtaining a single-phase h-LuMnO3. The best films were obtained by depositions at 700 °C, followed by thermal treatments at 800 °C for long periods of up to 12 h. These films exhibited a highly crystalline hexagonal single phase with a relatively narrow direct band gap, around 1.5 eV, which is within the expected values for the h-LuMnO3 system.

Synthesis and characterization of anatase phase TiO2 thin films for formaldehyde detection

Synthesis and characterization of anatase phase TiO2 thin films for formaldehyde detection

PREPARATION OF THIN FILMS FROM MULTI-LAYER 2D NANOMATERIALS LIQUID

Thin films comprised of laminated 2D nanomaterials have garnered considerable attention and hold significant promise across a multitude of applications, driven by their exceptional and distinct attributes. This study presents an innovative approach for fabricating thin films on glass substrates through the utilization of 2D multilayer liquid nanomaterials via a sputtering technique. These nanomaterials, encompassing graphene, MoS2, and h-BN, were synthesized employing a common household blender, followed by dispersion in a range of solvents, including acetone, ethylene glycol, and deionized water. In-depth characterization of the resultant thin films was undertaken, employing a comprehensive suite of microscopic and spectroscopic analytical methodologies. The outcomes of these characterizations underscore the profound influence of both the selected bulk material and the choice of solvent on the structural and morphological properties of the thin films. Impressively, the prepared thin films exhibit superlative adhesion and uniformity, manifesting smooth surfaces and a remarkable degree of crystallinity. Through the judicious selection of diverse bulk materials and solvents, this study effectively demonstrates the unparalleled versatility and adaptability of the sputtering method in producing thin films with a wide spectrum of tailored properties. This research not only advances our understanding of thin film formation but also underscores the immense potential of 2D nanomaterial-based films in diverse technological applications.