Abstract
The electrochemical deposition method created a CdSe thin film on FTO glass substrates. The film was examined using field scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, Raman spectroscopy, and optical and electrochemical measurements. The results show that the CdSe nanoparticles were evenly distributed on the substrate, with a Cd/Se ratio of 63.30% Se and 36.70% Cd. The XRD revealed a polycrystalline, hexagonal structure. The film is n-type semiconductor concentration with a carrier concentration of 1.194×1020 cm-3 . The CdSe showed 552.5 mF/cm2 of specific capacity with energy and a power density of 2.5 mW/cm2 and 9000 mW/cm2 , respectively
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