Al Schottky Diode Research Articles

Performance evaluation of p-type Cr2O3 thin films grown by reactive DC magnetron sputtering for Schottky diode applications

Abstract In this study, we present a comprehensive investigation into the impact of combined oxygen and argon flow rates on the physical properties of Cr2O3 thin films produced via reactive DC magnetron sputtering. Additionally, we explore the influence of oxygen flow rate on various aspects, including structural, morphological, optical, chemical, and electrical characteristics of the sputtered Cr2O3 thin films. Our analysis, based on XRD results, reveals the polycrystalline nature of the films. Surface morphology was examined through scanning electron microscopy. Optical analysis indicates a band gap ranging from 2.70 eV to 2.99 eV for the films. X-ray photoelectron spectroscopy analysis shows the splitting of Cr 2p core spectra into Cr 2p3/2 and Cr 2p1/2 domains within the range of 573 eV to 585 eV, alongside the presence of satellite peaks. Moreover, extracted electrical properties reveal the p-type conductivity of the deposited Cr2O3 thin film under various oxygen flow rates. Furthermore, we fabricate and characterize an ITO/p-Cr2O3/Al Schottky diode to provide additional insights into p-Cr2O3/Al Schottky diodes. Overall, this study contributes valuable insights and enhances our understanding of Cr2O3 thin film properties, particularly in the context of semiconductor devices like Schottky diodes.

Impact of Pd2+ and Sn4+ co-doping ZnO nanoflakes toward high-performing Schottky diode based on the generation of intermediate bands within the energy gap

Pd:Sn/ZnO nanohybrid was prepared by chemical co-precipitation route and identified using XRD, EDX, SEM, and TEM techniques. The microstructure analysis emphasized the polycrystalline nature in which Pd and Sn ions were substituted inside ZnO framework to form the nanocomposite. The surface morphology was appeared in 2D nanoflakes with large specific surface area. The optical parameters including Eg, n, and k were deduced from T% and R% spectra through wavelength range 300–1400 nm. The thin film showed strong optical absorption inside the UV region with a value of Eg = 3.10 eV. The Ag/Pd:Sn/ZnO/p-Si/Al Schottky diode was fabricated by thermal evaporation technique, and its electronic and photodetector properties were investigated from I–V and C–V measurements. The fabricated device exhibited non-ideal behavior with high rectification ratio RR = 935 and a relatively small Rs lies between 2365 and 2755 Ω. Under illumination impacts, the photodiode exhibited high photosensitivity and responsivity attributed to the large photo-induced charge carriers.

An Experimental Study on Artificial Intelligence‐Based Prediction of Capacitance–Voltage Parameters of Polymer‐Interface 6H‐SiC/MEH‐PPV/Al Schottky Diodes

Herein, an artificial neural network (ANN) model has been developed to predict the capacitance values of the polymer‐interface 6H‐SiC/MEH‐PPV/Al Schottky diode depending on the frequency. In the training of the feed‐forward back‐propagation network model with five neurons in its hidden layer, 480 experimental data have been used. Of these, 70% of the data used in the development of the multilayer perceptron network has been used for network training, 15% for validation, and 15% for the test phase. The predictive performance of the network model has been analyzed by comparing the predicted values obtained from the ANN with the experimental data. For the developed ANN, the mean square error value is 4.34E‐06, the R‐value is 0.99728, and the average margin of deviation value is 0.03%.

Improvement the efficacy of Al/CuPc/n-Si/Al Schottky diode based on strong light absorption and high photocarriers response

Copper phthalocyanine has been prepared by simple chemical approach and its structural and optical properties were investigated. X-ray diffraction pattern exhibits a notable peak at assigned to the phase of CuPc. SEM images show the particles distributed in nanospheres with average size at about 50 nm. The linear optical constants like optical band gap and dielectric constants () were estimated from transmittance and reflectance spectra in the wavelength range from 250 to 900 nm. The energy gap was found to be 1.62 and 2.90 eV dependent on the incident photon energy. Al/CuPc/n-Si/Al Schottky diode has been fabricated using thermal evaporation technique. The electronic parameters such as the ideality factor series resistance and barrier height () were evaluated in dark by applying the (I–V), Cheung-Chung, and Norde models. At various illumination intensities, the photocurrent sensitivity was studied based on the response of trapped charge carriers. At 1 Mhz, the built-in voltage and donor concentration were calculated from (C–V) measurements. The findings revealed that CuPc/n-type Si can be used as photodiode in optoelectronic applications.

Microelectronic properties of the organic Schottky diode with pyronin-Y: Admittance spectroscopy, and negative capacitance

The Au/Pyronin-Y/p-Si/Al Schottky diode was designed and studied by using the DC and AC measurements. Current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage methods under different frequencies and voltage biasing were measured at room temperature. The I-V characteristics and C-V characteristics were determined by using the electrical and impedance measurements. From I-V characteristics curve, the Au/pyronin-Y/p-Si/Al Schottky diode has a rectifying behavior. The parameters of Schottky diode such as the series resistance, ideality factor, and barrier height were computed for Au/Pyronin-Y/p-Si/Al junction diode. The performance of the Au/pyronin-Y/p-Si/Al diode is attributed to the creation of the interfacial layer by the organic semiconductor dye. Admittance spectroscopy method can describe the series resistance-voltage (Rs-V) and impedance-voltage (Z-V), capacitance-voltage (C-V) and conductance-voltage (G-V) measurements at different frequencies at room temperature. This device showed a negative capacitance at higher frequencies. The origin of negative capacitance is attributed to the inductive behavior of the studied materials. From C-V analysis, different parameters were calculated and analyzed such as the doping concentration, the built-in potential, the depletion layer and the diffusing potential at zero bias. The obtained results support that the electronic properties of the silicon-based Schottky diode can be controlled by the interlayer organic layer (Pyronin-Y).

The photovoltaic properties of a good rectifying Al/n-ZnO/p-Si/AL Schottky diode used in solar cell

The photovoltaic properties of a good rectifying Al/ZnO/pSi/Al Schottky diode are studied. The diode was fabricated from two processes like ultrasonic spray pyrolysis @ 350°C for the ZnO layer on p-type Si substrate and thermal evaporation in vacuum at 10 -6 Torr for the metallic contacts. The current-voltage (I-V) measurements show a good rectifying behavior. Therefore, the extracted parameters are calculated in dark and illumination in one hand and under heating conditions in other hand. Ideality factor is lower around 1.5. Barrier height and series resistance, determined by Cheung-Cheung and Norde methods, are found to be 0.6-0.9 V and 1.4-5.4 kΩ. The parameters are influenced by increasing temperature; barrier height goes from 0.7 to 0.9 V and series resistance range within the range 1.2 -2.5 kΩ. Under light (150 W), the open circuit voltage and short circuit are found to be 0.09 V and 0.3 µA, the fill factor is of 0.44.

Analysis of the Electrical Properties of an Electron Injection Layer in Alq3-Based Organic Light Emitting Diodes.

We investigated the carrier transfer and luminescence characteristics of organic light emitting diodes (OLEDs) with structure ITO/HAT-CN/NPB/Alq3/Al, ITO/HAT-CN/NPB/Alq3/Liq/Al, and ITO/HAT-CN/NPB/Alq3/LiF/A. The performance of the OLED device is improved by inserting an electron injection layer (EIL), which induces lowering of the electron injection barrier. We also investigated the electrical transport behaviors of p-Si/Alq3/Al, p-Si/Alq3/Liq/Al, and p-Si/Alq3/LiF/Al Schottky diodes, by using current-voltage (L-V) and capacitance-voltage (C-V) characterization methods. The parameters of diode quality factor n and barrier height φ(b) were dependent on the interlayer materials between Alq3 and Al. The barrier heights φ(b) were 0.59, 0.49, and 0.45 eV, respectively, and the diode quality factors n were 1.34, 1.31, and 1.30, respectively, obtained from the I-V characteristics. The built in potentials V(bi) were 0.41, 0.42, and 0.42 eV, respectively, obtained from the C-V characteristics. In this experiment, Liq and LiF thin film layers improved the carrier transport behaviors by increasing electron injection from Al to Alq3, and the LiF schottky diode showed better I-V performance than the Liq schottky diode. We confirmed that a Liq or LiF thin film inter-layer governs electron and hole transport at the Al/Alq3 interface, and has an important role in determining the electrical properties of OLED devices.

Thermal sensor based zinc oxide diode for low temperature applications

The device parameters of Al/p-Si/Zn1-xAlxO-NiO/Al Schottky diode for x = 0.005 were investigated over the 50 K–400 K temperature range using direct current–voltage (I–V) and impedance spectroscopy. The films were prepared using the sol–gel method followed by spin-coating on p-Si substrate. The ideality factor, barrier height, resistance and capacitance of the diode were found to depend on temperature. The calculated barrier height has a mean. Capacitance–voltage (C–V) measurements show that the capacitance decreases with increasing frequency, suggesting a continuous distribution of interface states over the surveyed 100 kHz to 1 MHz frequency range. The interface state densities, Nss, of the diode were calculated and found to peak as functions of bias and temperature in two temperature regions of 50 K–300 K and 300 K–400 K. A peak value of approximately 1012/eV cm2 was observed around 0.7 V bias for 350 K and at 3 × 1012/eVcm2 around 2.2 V bias for 300 K. The relaxation time was found to average 4.7 μs over all the temperatures, but showing its lowest value of 1.58 μs at 300 K. It is seen that the interface states of the diode is controlled by the temperature. This suggests that Al/p-Si/Zn1-xAlxO-NiO/Al diode can be used as a thermal sensors for low temperature applications.

Electronic Properties of DNA-Based Schottky Barrier Diodes in Response to Alpha Particles.

Detection of nuclear radiation such as alpha particles has become an important field of research in recent history due to nuclear threats and accidents. In this context; deoxyribonucleic acid (DNA) acting as an organic semiconducting material could be utilized in a metal/semiconductor Schottky junction for detecting alpha particles. In this work we demonstrate for the first time the effect of alpha irradiation on an Al/DNA/p-Si/Al Schottky diode by investigating its current-voltage characteristics. The diodes were exposed for different periods (0–20 min) of irradiation. Various diode parameters such as ideality factor, barrier height, series resistance, Richardson constant and saturation current were then determined using conventional, Cheung and Cheung’s and Norde methods. Generally, ideality factor or n values were observed to be greater than unity, which indicates the influence of some other current transport mechanism besides thermionic processes. Results indicated ideality factor variation between 9.97 and 9.57 for irradiation times between the ranges 0 to 20 min. Increase in the series resistance with increase in irradiation time was also observed when calculated using conventional and Cheung and Cheung’s methods. These responses demonstrate that changes in the electrical characteristics of the metal-semiconductor-metal diode could be further utilized as sensing elements to detect alpha particles.

Preparation of nanostructured PbS thin films as sensing element for NO2 gas

Abstract In this work, we demonstrate that semiconducting films of AIVBVI compounds, in particular, of nanostructured lead sulfide (PbS) which prepared by chemical bath deposition (CBD), can be used as a sensing element for nitrogen dioxide (NO2) gas. The CBD method is versatile, simple in implementation and gives homogeneous semiconductor structures. We have prepared PbS nanocrystalline thin film at different reaction baths and temperatures. In the course of deposition, variable amounts of additives, such as organic substances among them, were introduced into the baths. The energy dispersive analysis (EDX) confirms the chemical composition of PbS films. A current–voltage (I–V) characterization of Pd/nc-PbS/a-SiC:H pSi(100)/Al Schottky diode structures were studied in the presence of NO2 gas. The gas sensing behavior showed that the synthesized PbS nanocrystalline thin films were influenced by NO2 gas at room temperature. The results can be used for developing an experimental sensing element based on chemically deposited nanostructured PbS films which can be applicable in gas sensors.

Fabrication and electrical characterisation of the Ti/GaTe/p-Si device under 18 MeV electron irradiation

We deposited GaTe thin films with electrochemical growth technique on p-Si (100) substrate and investigated their structural and electrical properties. The electrical characteristics of the Ti/GaTe/p-Si/Al Schottky diode (SD) were determined by means of I–V (current–voltage) and C–V (capacitance–voltage) measurements. The diodes were irradiated with high energy (18 MeV) and low doses (1.38 × 1010 e− cm−2) electrons. The ideality factor values for Ti/GaTe/p-Si/Al structure were calculated as 1.27 and 1.53 and the barrier heights have been obtained as 0.739 and 0.706 eV from I–V measurements before and after each electron irradiations, respectively. Also, the parameters such as built-in potential, Fermi levels, acceptor concentration and barrier height of the Ti/GaTe/p-Si/Al SD have been calculated by the help of C–V measurements before and after each irradiations. The change in parameters was interpreted by the defect formation at the interface due to the electron irradiation.

Some physical investigations of AgInS2−xSex thin film compounds obtained from AgInS2 annealed in seleneide atmosphere

This work deals with the preparation of AgInS2−xSex from AgInS2 (AIS) sprayed thin films which treated under seleneide atmosphere during 1h at various temperatures (400, 450 and 500°C). Previously elaborated AgInS2 compound, which has been conceived as an absorber layer in the SnO2:F/AgInS2 (p)/Al Schottky diode, has presented some generation–recombination deficiencies and tunneling effects. XRD analysis shows the incorporation of Se element in the AgInS2 matrix especially for use of 450°C as heat temperature. The optical band gap calculated from transmittance and reflectance spectra of the above samples show the effect of annealed temperature on the band gap energy. The refractive index and extinction coefficient of the differently sample of AgInS2−xSex thin films have been reached through their transmission and reflectance spectra on a wide range of wavelengths. The surface topography and the roughness parameters of AgInS2−xSex thin films had been studied by AFM. Finally, thermal conductivity was determinate by the mirage effect. This thermal property was decreased by the annealed temperatures.

Fabrication and electrical characteristics of the Pt/SiNWs/n-Si/Al Schottky diode structure

Array-ordered silicon nanowires (SiNWs) were fabricated directly on n-Si substrate by wet chemical etching. The electroless plating method was used to modify SiNWs with platinum (Pt) nanoparticles as the top electrodes, forming the novel tridimensional Pt/SiNWs/n-Si/Al Schottky diode structure. The structural and electrical characteristics were investigated to obtain the optimal experimental conditions for forming the Pt/SiNWs/n-Si/Al Schottky barrier diode structures. Three key electrical parameters (ideality factors, barrier heights and series resistance) are 11.58eV, 0.93eV and [email protected], respectively. The study reveals that the Pt/SiNWs/n-Si/Al Schottky diode structure would have a great potential application in nanoscale optoelectronic devices by controlling the experimental parameters properly.

Hydrogen-Induced Dissociation of the Fe-B Pair in Boron-Doped P-Type Silicon

The interaction between hydrogen and the iron-boron pair (Fe-B) has been investigated in iron-contaminated boron-doped Cz-Si using capacitance-voltage measurements (CV) and deep level transient spectroscopy (DLTS). Introduction of hydrogen was performed by wet chemical etching and subsequent reverve bias annealing of Al Schottky diodes. The treatment led to the appearance of the defect level characteristic to interstitial iron (Fei) with a corresponding decrease in the concentration of the Fe-B pair. Concentration versus depth profiles of the defects show that dissociation of Fe-B occurs in the depletion region and capacitance-voltage measurements unveil a decrease in the charge carrier concentration due to passivation of B. These quantitative observations imply strongly that H promotes dissociation of Fe-B releasing Fei whereas no detectable passivation of Fe-B or Fei by H occurs.

Hydrostatic pressure effect on the electrical properties of Al/conducting polymer (P3DMTPT)/p-Si/Al structure

Al/P3DMTPT/p-Si/Al structure has been obtained by the evaporation of the polymer P3DMTPT on the front surface of a p-type silicon substrate. The current–voltage characteristic ( I–V) of the structure has been measured under hydrostatic pressure at room temperature. Al/P3DMTPT/p-Si/Al structure demonstrates clearly rectifying behaviour by I–V curves under hydrostatic pressure. The barrier height and ideality factor from I–V characteristics varies from 3.8 to 2.03 and 0.63 to 0.72 eV at 0.0–6.0 kbar pressure, respectively. The barrier height for Al/P3DMTPT/p-Si/Al Schottky diodes has a linear pressure coefficient of α = 16.3 meV / kbar ( = 163 meV / GPa ) . The energy distribution of the interface state density determined from I–V characteristics ranges from 1.46×10 12 cm −2 eV −1 in ( 0.58 − E V ) eV to 2.14×10 12 cm −2 eV −1 in ( 0.44 − E V ) eV and 4.84×10 11 cm −2 eV −1 in ( 0.64 − E V ) eV to 1.27×10 12 cm −2 eV −1 in ( 0.44 − E V ) eV for 0 and 6 kbar, respectively. The interface state density decreases with increasing hydrostatic pressure due to the rectifying properties of the diode.

Effect of interfacial layer and series resistance on electrical characteristics for the PtSi/p-SiNWs Schottky diode

A comparison study between the PtSi/p-Si/Al and the PtSi/p-SiNWs/p-Si/Al contacts has been carried out in this study. The PtSi/p-Si/Al contact behaves an ohmic contact with about contact resistance 10 Ω, but the PtSi/p-SiNWs/p-Si /Al contact exhibits the rectifying properties. The Richardson plot of reverse saturation current over a temperature range of 293–373 K is used to determine the electrical parameters of the PtSi/p-SiNWs/p-Si /Al Schottky barrier diode. And the obtained electrical parameters are also confirmed by the Cheung’s model. The barrier height and ideality factor obtained at room temperature are 0.242 eV and 2.426, respectively, indicating a deviation from ideal Schottky diode. The effect of the interfacial layer and the series resistance on the electrical characteristics was investigated for the PtSi/p-SiNWs/p-Si/Al Schottky diode.

Electrical Properties of the Bonding Interface in a (110)/(100) Direct-Silicon-Bonded (DSB) Wafer

In this article, the electrical activity of an interfacial grain boundary in a Direct-Silicon-Bonded wafer was examined by C-V and capacitance transient techniques using Al Schottky diodes. The samples consisted a 2.3 μm thick (110) Si layer on a p-type (100) Si substrate produced by hydrophilic wafer bonding, cleavage, and epi-thickening. Effects of Fe contamination and hydrogenation on the boundary's electrical properties were also examined. GB states below but close to the charge neutral level were studied. It was found that for the relatively clean interfacial bonding GB, the density of GB states (NT) is ~6x1012 eV-1cm-2, and the charge neutral level is at ~0.53 eV from the valance band. NT increased to over 2x1013 eV-1cm-2 after Fe contamination, which was reduced to ~1x1013 eV-1cm-2 after a hydrogenation treatment. The charge neutral level, which shifted towards the conduction band after Fe contamination, was reversed after hydrogenation. The electron emission rate from the GB donor states was found to be about two orders of magnitude larger than the corresponding hole emission rate.

Current–voltage and capacitance–voltage characteristics of the ITO/polyaniline doped boron trifloride/Al Schottky diode

AbstractThe electrical characteristics of the ITO/polyaniline (PANI) doped boron trifloride (BF3)/Al Schottky diode have been investigated by current–voltage (I–V) and capacitance–voltage (C–V) methods. The diode indicates a rectification behavior with the ideality factor of 4.78. An ideality factor higher than unity can result from the interface state and electronic properties of the PANI doped BF3 organic semiconductor. The barrier height of the diode was determined from both I–V and C–V characteristics. The barrier height obtained from the C–V measurements is higher than that obtained from the I–V measurements. At higher forward bias voltages, the space charge‐limited current is the dominant transport mechanism, whereas at reverse bias voltages, the current flow in the ITO/PANIBF3/Al diode is controlled by Schottky emission mechanism. Copyright © 2008 John Wiley & Sons, Ltd.

Low-frequency noise in epitaxially grown Schottky junctions

The low-frequency power spectrum has been measured for ErAs:InAlGaAs diodes and shows at least a ten-times reduction of 1∕f noise compared to traditional Al Schottky diodes on the same semiconductor material. These junctions are grown by molecular beam epitaxy, preventing oxidation and other contamination at the junction. The major noise source for these devices is attributed to the sidewalls and not the junction itself. Low-frequency oscillations have also been observed and associated with a deep trap level estimated to be ∼200 meV below the conduction band edge by the comparison of diodes with different InAlGaAs compositions and confirmed by deep level transient spectroscopy. This deep level could be associated to erbium incorporation in the depletion region.

Copper phthalocyanine based Schottky diode solar cells

Copper phthalocyanine (CuPc)/Aluminum (Al) Schottky diode solar cells were studied. The thickness of the CuPc layer was varied from 15 nm to 140 nm. Short circuit current densities (Jsc) increased with thickness from 0.042 mA/cm2 at 15 nm to 0.124 mA/cm2 at 120 nm reaching saturation at that level. Open circuit voltages (Voc) increased from 220 mV at 15 nm to 907 mV at 140 nm. Analysis of the current-voltage characteristics indicated that tunneling and interface recombination current mechanisms are important components of the current transport at the CuPc/Al junction.