Abstract
A comparison study between the PtSi/p-Si/Al and the PtSi/p-SiNWs/p-Si/Al contacts has been carried out in this study. The PtSi/p-Si/Al contact behaves an ohmic contact with about contact resistance 10 Ω, but the PtSi/p-SiNWs/p-Si /Al contact exhibits the rectifying properties. The Richardson plot of reverse saturation current over a temperature range of 293–373 K is used to determine the electrical parameters of the PtSi/p-SiNWs/p-Si /Al Schottky barrier diode. And the obtained electrical parameters are also confirmed by the Cheung’s model. The barrier height and ideality factor obtained at room temperature are 0.242 eV and 2.426, respectively, indicating a deviation from ideal Schottky diode. The effect of the interfacial layer and the series resistance on the electrical characteristics was investigated for the PtSi/p-SiNWs/p-Si/Al Schottky diode.
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