Abstract
The magnesium phthalocyanine (MgPc) based Schottky diodes are fabricated using four inorganic semiconductors (n-GaAs, n-Si, p-InP, p-Si)by the spin-coating process at 2000rpm for 1min. Their microelectronic and photoelectrical parameters are investigated from the current-voltage I–V characteristics measurements at room temperature in dark and under light. The ln I–V plots, Cheung and Norde methods are used to extract the MgPc based Schottky diodes parameters in dark, including ideality factor (n), barrier height (Φb), series resistance (Rs) and the obtained values are compared. The MgPc/n-Si showed excellent n of 1.1 which is very closer to ideal Schottky diode behavior, high Фb of 0.98eV and low series resistance of 237.77Ω in contrast MgPc/p-Si showed non-ideal Schottky diode behavior with n of 2.42 and high series resistance of 1.92×103Ω. The MgPc/p-InP exhibited photovoltaic behavior with excellent JSC of 3.11×103mA/cm2 and a photosensitivity of 30.46. The I–V forward bias in log scale have been investigated to survey the dominated conduction mechanism. This study reviews thecrucial effect of (p and n) type conductivity substrates on the electrical parameters of organic MgPc Schottky diodes for the use in such organic photovoltaic applications.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
