Microelectronic properties of the organic Schottky diode with pyronin-Y: Admittance spectroscopy, and negative capacitance

Abstract

The Au/Pyronin-Y/p-Si/Al Schottky diode was designed and studied by using the DC and AC measurements. Current-voltage (I-V), capacitance-voltage (C-V) and conductance-voltage methods under different frequencies and voltage biasing were measured at room temperature. The I-V characteristics and C-V characteristics were determined by using the electrical and impedance measurements. From I-V characteristics curve, the Au/pyronin-Y/p-Si/Al Schottky diode has a rectifying behavior. The parameters of Schottky diode such as the series resistance, ideality factor, and barrier height were computed for Au/Pyronin-Y/p-Si/Al junction diode. The performance of the Au/pyronin-Y/p-Si/Al diode is attributed to the creation of the interfacial layer by the organic semiconductor dye. Admittance spectroscopy method can describe the series resistance-voltage (Rs-V) and impedance-voltage (Z-V), capacitance-voltage (C-V) and conductance-voltage (G-V) measurements at different frequencies at room temperature. This device showed a negative capacitance at higher frequencies. The origin of negative capacitance is attributed to the inductive behavior of the studied materials. From C-V analysis, different parameters were calculated and analyzed such as the doping concentration, the built-in potential, the depletion layer and the diffusing potential at zero bias. The obtained results support that the electronic properties of the silicon-based Schottky diode can be controlled by the interlayer organic layer (Pyronin-Y).